70CRU02PBF_11

VS-70CRU02PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® Base common cathode 2 FEATURES • • • • • • Ultrafast recovery time Low forward voltage drop Up to 175 °C operating junction temperature Common-cathode diodes Low leakage current Optimized for power conversion: welding and industrial SMPS applications • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level • Halogen-free according to IEC 61249-2-21 definition TO-218 1 3 Anode 2 Anode 2 1 Common cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-218 2 x 35 A 200 V 1.09 V See Recovery table 175 °C Common cathode DESCRIPTION The VS-70CRU02PbF integrates two state of the art Vishay Semiconductors ultrafast recovery rectifiers in the common-cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous forward current per diode Cathode to anode voltage Single pulse forward current per diode Maximum power dissipation per module Operating junction and storage temperatures SYMBOL IF(AV) VR IFSM PD TJ, TStg TC = 25 °C TC = 100 °C TEST CONDITIONS TC = 145 °C MAX. 35 200 300 67 - 55 to 175 UNITS A V A W °C ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 60 μA I F = 35 A Forward voltage IF = 35 A, TJ = 125 °C IF = 35 A, TJ = 175 °C Reverse leakage current Junction capacitance Series inductance IR CT LS VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured from A-lead to K-lead 5 mm from package body MIN. 200 TYP. 0.95 0.9 0.85 50 10 MAX. 1.09 1.0 0.9 60 2 μA mA pF nH V UNITS Document Number: 94509 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-70CRU02PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TJ = 25 °C Reverse recovery time trr TJ = 125 °C TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 35 A VR = 100 V dIF/dt = 200 A/μs TEST CONDITIONS IF = 1 A V R = 30 V dIF/dt = 200 A/μs MIN. TYP. 34 26 49 3.7 8.2 48.7 202 MAX. 28 A ns UNITS Reverse recovery charge μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-218 per diode both legs SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. 1.2 (10) TYP. 0.8 0.2 5.5 0.2 MAX. 0.9 0.45 2.4 (20) g oz. Nm (lbf in) K/W UNITS 70CRU02 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94509 Revision: 09-Feb-11 VS-70CRU02PbF Ultrafast Rectifier, 2 x 35 A FRED Pt® Vishay Semiconductors IF - Instantaneous Forward Current (A) 1000 1000 TJ = 175 °C IR - Reverse Current (mA) 100 125 °C 10 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 25 °C 0.1 1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.01 0 50 100 150 200 Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Diode) 1000 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) TJ = 25 °C 100 10 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 PDM 0.1 Single pulse (thermal resistance) t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94509 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-70CRU02PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® 180 170 160 60 150 140 130 120 110 100 90 80 0 10 20 30 40 50 60 IF(AV) - Average Forward Current (A) Square wave (D = 0.50) Rated VR applied See note (1) DC 50 TJ = 125 °C 80 70 IF = 35 A VRR = 100 V Allowable Case Temperature (°C) trr (ns) 40 30 20 10 0 100 TJ = 25 °C 1000 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 50 600 500 400 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC IF = 35 A VRR = 100 V Average Power Loss (W) 40 RMS limit Qrr (nC) 30 TJ = 125 °C 300 200 100 0 100 TJ = 25 °C 20 10 0 0 10 20 30 40 50 60 IF(AV) - Average Forward Current (A) 1000 dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94509 Revision: 09-Feb-11 VS-70CRU02PbF Ultrafast Rectifier, 2 x 35 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94509 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-70CRU02PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 - 70 2 C 3 R 4 U 5 02 6 PbF 7 Vishay Semiconductors product Current rating (70 = 70 A) Common cathode TO-218 Ultrafast recovery Voltage rating (02 = 200 V) PbF = Lead (Pb)-free Tube standard pack quantity: 30 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95214 www.vishay.com/doc?95219 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94509 Revision: 09-Feb-11 Outline Dimensions Vishay High Power Products FRED PtTM TO-218 DIMENSIONS in millimeters (inches) Ø 0.159 ± 0.002 (Ø 4.04 ± 0.05) 0.3066 ± 0.003 (7.79 ± 0.08) 0.588 ± 0.005 (14.94 ± 0.13) 0.1890 ± 0.005 (4.80 ± 0.13) 0.050 ± 0.003 (1.27 ± 0.08) 45.0° 0.4800 ± 0.005 (12.19 ± 0.13) 1 2 3 5.0° (2 places) 3.0° (3 places) Ø 0.118 x 0.01 DP. (Ø 3.00 x 0.254) 0.0980 ± 0.002 (2.49 ± 0.05) 0.6025 ± 0.005 (15.30 ± 0.13) 0.2165 BSC + 0.006 0.0430 - 0.000 (1.09 + 0.15 ) - 0.00 + 0.006 0.0197 - 0.000 (0.50 + 0.15 ) - 0.00 Document Number: 95214 Revision: 21-Apr-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1