80EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 80 A
FEATURES/DESCRIPTION
Base common cathode 2, 4
The 80EPF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.
Pb-free Available
RoHS*
COMPLIANT
The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
TO-247AC
Anode 1 Anode 3
This product series has been designed and qualified for industrial level and lead (Pb)-free.
APPLICATIONS PRODUCT SUMMARY
VF at 40 A trr VRRM < 1.2 V 90 ns 1000/1200 V
• Output rectification and choppers and converters
freewheeling
in
inverters,
• Input rectifications where severe restrictions on conducted EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, - 100 A/µs 40 A, TJ = 25 °C Sinusoidal waveform TEST CONDITIONS VALUES 1000/1200 80 1100 90 1.2 - 40 to 150 UNITS V A ns V °C
VOLTAGE RATINGS
PART NUMBER 80EPF10PbF 80EPF12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1100 1300 IRRM AT 150 °C mA 12
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 92 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 80 1100 1250 5000 7000 70 000 A2s A2√s A UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94107 Revision: 05-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1
80EPF..PbF Soft Recovery Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.35 4.03 0.87 VR = Rated VRRM 0.1 12 UNITS V mΩ V mA
Fast Soft Recovery Rectifier Diode, 80 A
RECOVERY CHARACTERISTICS
PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 80 Apk 25 A/µs 25 °C VALUES 480 7.1 2.1 0.5 UNITS ns A µC
dir dt Qrr IRM(REC) IFM trr t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.35 40 0.2 6 0.21 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C
Mounting torque
Marking device
80EPF10 80EPF12
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Document Number: 94107 Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 80 A
150 140
Vishay High Power Products
Maximum Allowable Case Temperature (°C)
140 130
Maximum Average Forward Power Loss (W)
80EPF.. Series RthJC (DC) = 0.35 °C/W
120 100 80 60
180° 120° 90° 60° 30° RMS limit
Ø
120 110 100 90 30° 80 0 10 20 30 40 50
Conduction angle
Ø
60° 90° 180° 120° 60 70 80 90
40 20 0
Conduction angle 80EPF.. Series TJ = 150 °C
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
1200 80EPF.. Series RthJC (DC) = 0.35 °C/W 1100 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
Maximum Allowable Case Temperature (°C)
140 130
Peak Half Sine Wave Forward Current (A)
1000 900 800 700 600 500 400 80EPF.. Series
Ø
120 110 100 90
Conduction period
60° 30°
DC 120° 90° 180° 80 100 120 140
80
300 1 10 100
0
20
40
60
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current
200
Maximum Average Forward Power Loss (W)
175 150 125 100
Peak Half Sine Wave Forward Current (A)
DC 180° 120° 90° 60° 30°
1300 1200 1100 1000 900 800 700 600 500 400 140 300 0.01 80EPF.. Series Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
RMS limit 75
Ø
50 25 0 0 20 40 60 80
Conduction period
80EPF.. Series TJ = 150 °C 100 120
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94107 Revision: 05-Jun-08
For technical questions, contact: diodes-tech@vishay.com
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80EPF..PbF Soft Recovery Series
Vishay High Power Products
Instantaneous Forward Current (A)
1000
Fast Soft Recovery Rectifier Diode, 80 A
100
10
TJ = 25 °C TJ = 150 °C
80EPF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
800 700 80EPF.. Series TJ = 25 °C
12 000 10 000 8000 6000 4000 2000 IFM = 1 A 0 0 40 80 120 160 200 0 40 80 120 160 200 IFM = 40 A IFM = 20 A IFM = 10 A 80EPF.. Series TJ = 25 °C IFM = 80 A
600 500 400 300 200 100 IFM = 1 A 0 IFM = 20 A IFM = 40 A IFM = 10 A IFM = 80 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Qrr - Maximum Reverse Recovery Charge (nC)
trr - Maximum Reverse Recovery Time (ns)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
1800 1600 80EPF.. Series TJ = 150 °C IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 1 A
25 000 80EPF.. Series TJ = 150 °C IFM = 80 A
Qrr - Maximum Reverse Recovery Charge (nC)
trr - Maximum Reverse Recovery Time (ns)
1400 1200 1000 800 600 400 200 0 0 40 80 120 160 200
20 000
15 000
IFM = 40 A
10 000
IFM = 20 A IFM = 10 A
5000 IFM = 1 A 0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94107 Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 80 A
45 40 80EPF.. Series TJ = 25 °C IFM = 80 A 60 50 40 30 20 10 0 0 40 80 120 160 200 0 40 80 120 160 200 80EPF.. Series TJ = 150 °C IFM = 80 A
Vishay High Power Products
Irr - Maximum Reverse Recovery Current (A)
35 30 25 20 15 10 5 0 IFM = 10 A IFM = 1 A IFM = 40 A IFM = 20 A
Irr - Maximum Reverse Recovery Current (A)
IFM = 40 A IFM = 20 A IFM = 10 A
IFM = 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (°C/W)
1
0.1
Steady state value (DC operation)
0.01
Single pulse
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
80EPF.. Series
0.001 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94107 Revision: 05-Jun-08
For technical questions, contact: diodes-tech@vishay.com
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80EPF..PbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Fast Soft Recovery Rectifier Diode, 80 A
80
1
E
2
P
3
F
4
12
5
PbF
6
1 2 3 4 5 6
-
Current rating (80 = 80 A) Circuit configuration: E = Single diode Package: P = TO-247AC
-
Type of silicon: F = Fast diode Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 10 = 1000 V 12 = 1200 V
LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95223 http://www.vishay.com/doc?95226
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Document Number: 94107 Revision: 05-Jun-08
Outline Dimensions
www.vishay.com DIMENSIONS in millimeters and inches
(3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1
Vishay Semiconductors
D D Thermal pad 4
D1 (4)
Planting
(b1, b3, b5)
Base metal D DE E C C
Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode
(c)
c1 (b, b2, b4) (4) Section C - C, D - D, E - E
View B
SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1
MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 -
INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 -
NOTES
SYMBOL D2 E E1 e FK L L1 N P P1 Q R S
3 4
MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC
INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC
NOTES
3
Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000 Revision: 11-Mar-11
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