80RIA80MPBF

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 80 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AC (TO-94) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level TYPICAL APPLICATIONS TO-209AC (TO-94) • DC motor controls • Controlled DC power supplies • AC controllers 80 A PRODUCT SUMMARY IT(AV) MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 80 TC 85 125 1900 1990 18 16 400 to 1200 110 - 40 to 125 V μs °C kA2s A UNITS A °C I2t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 40 80RIA 81RIA 80 120 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1300 15 IDRM/IRRM MAXIMUM AT TJ = 125 °C mA Document Number: 94392 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 80 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 75 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage 100 % VRRM reapplied VALUES 80 85 125 1900 1990 1600 Sinusoidal half wave, initial TJ = TJ maximum 1675 18 16 12.7 11.7 180.5 0.99 1.13 2.29 1.84 1.60 200 400 kA2s V m V mA kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt TEST CONDITIONS TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber 0.2 μF, 15 , gate pulse: 20 V, 65 , tp = 6 μs, tr = 0.5 μs Per JEDEC standard RS-397, 5.2.2.6. Gate pulse: 10 V, 15  source, tp = 6 μs, tr = 0.1 μs, Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate bias: 0 V 25 , tp = 500 μs VALUES 300 UNITS A/μs td tq 1 μs 110 BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = 125 °C exponential to 67 % rated VDRM TJ = 125 °C rated VDRM/VRRM applied VALUES 500 15 UNITS V/μs mA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94392 Revision: 17-Sep-10 80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series Phase Control Thyristors (Stud Version), 80 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C Maximum DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = TJ maximum, tp  5 ms TEST CONDITIONS TJ = TJ maximum, tp  5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 12 3 3 20 10 270 120 60 3.5 2.5 1.5 6 mA V mA UNITS W A V Vishay Semiconductors 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, ± 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.30 K/W 0.1 15.5 (137) 14 (120) 130 UNITS °C N·m (lbf · in) g TO-209AC (TO-94) Document Number: 94392 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series Vishay Semiconductors RthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.042 0.050 0.064 0.095 0.164 RECTANGULAR CONDUCTION 0.030 0.052 0.070 0.100 0.165 TJ = TJ maximum K/W TEST CONDITIONS UNITS Phase Control Thyristors (Stud Version), 80 A Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case T emperature (°C) Maximum Allowable Case T emperature (°C) 130 80RIA S eries RthJC (DC) = 0.30 K/W 120 130 120 110 80RIA S eries RthJC (DC) = 0.30 K/W 110 Conduc tion Angle Conduction Period 100 90 30° 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A) 60° 90° 120° 180° DC 100 30° 60° 90° 120° 180° 90 80 0 10 20 30 40 50 60 70 80 90 Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-s tate Power Loss (W) 120 hS Rt 110 100 90 80 70 60 50 180° 120° 90° 60° 30° RMSLimit 6 0. W K/ A = /W 4K 0. 1 K/ W e lt -D a 1.4 K/ W 2K /W R 40 30 20 Conduction Angle 3 K/ W 10 0 0 10 20 30 40 80RIA S eries T = 125°C J 50 60 70 80 0 5 K/ W 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94392 Revision: 17-Sep-10 80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series Phase Control Thyristors (Stud Version), 80 A Maximum Average On-state Power Los (W) s 180 160 140 Vishay Semiconductors 120 100 80 60 40 20 0 DC 180° 120° 90° 60° 30° R th S A = 0. 6K /W 0. 4 K/ W -D e lt a 1K /W R RMSLimit Conduc tion Period 1.4 K/ W 2 K/ W 3 K/ W 80RIA S eries T = 125°C J 0 20 40 60 80 100 120 5 K/ W 140 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 4 - On-State Power Loss Characteristics Peak Half S Wave On-s ine tate Current (A) 1600 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1400 Peak Half S Wave On-state Current (A) ine 1800 2000 Maximum Non Repetitive Surge Current 1900 Versus Pulse Train Duration. Control 1800 Of Conduction May Not Be Maintained. Initial TJ = 125°C 1700 No Voltage Reapplied 1600 Rated V RRM Reapplied 1500 1400 1300 1200 1100 1000 900 80RIA S eries 800 700 0.01 1200 1000 80R S IA eries 800 1 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) 0.1 1 Puls T e rain Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) 1000 100 T = 25°C J T = 125°C J 10 80RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Document Number: 94392 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series Vishay Semiconductors (K/ W) 1 Steady State Value R thJC = 0.30 K/W (DC Operation) 0.1 Phase Control Thyristors (Stud Version), 80 A T ransient T hermal Impedance Z thJC 0.01 80RIA Series 0.001 0.0001 0.001 0.01 0.1 1 10 S uare Wave Pulse Duration (s) q Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30ohms; tr