83143

VISHAY TLMW310. Vishay Semiconductors High Intensity SMD LED Description This device has been designed to meet the increasing demand for white SMD LED. The package of the TLMW310. is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled with a mixture of epoxy and TAG phosphor. The TAG phosphor converts the blue emission partially to yellow, which mixes with the remaining blue to give white. 19225 e3 Pb Pb-free Features • High efficient InGaN technology • Chromaticity Coordinate categorized according to CIE1931 per packing unit • Luminous intensity ratio in one packing unit IVmax/IVmin ≤ 1.6 • Typical color temperature 5500 K • ESD class 1 • EIA and ICE standard package • Compatible with infrared, vapor phase and wave solder processes according to CECC • Available in 8 mm tape reel • Lead-free device Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Backlighting for audio and video equipment Backlighting in office equipment Indoor and outdoor message boards Flat backlight for LCDs, switches and symbols Illumination purposes, alternative to incandescent lamps General use Parts Table Part TLMW3100 TLMW3101 TLMW3102 Color, Luminous Intensity White, IV > 80 mcd White, IV = (80 to 200) mcd White, IV = (125 to 320) mcd Angle of Half Intensity (±ϕ) 60 ° 60 ° 60 ° Technology InGaN / TAG on SiC InGaN / TAG on SiC InGaN / TAG on SiC Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMW310. Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Tamb ≤ 70 °C tp ≤ 10 µs Tamb ≤ 70 °C Test condition Symbol VR IF IFSM PV Tj Tamb Value 5 20 0.1 85 100 - 40 to + 100 Unit V mA A mW °C °C Document Number 83143 Rev. 1.7, 31-Aug-04 www.vishay.com 1 TLMW310. Vishay Semiconductors Parameter Storage temperature range Soldering temperature Thermal resistance junction/ ambient t≤5s mounted on PC board (pad size > 16 mm2) Test condition Symbol Tstg Tsd RthJA Value - 40 to + 100 260 350 VISHAY Unit °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified White TLMW310. Parameter Luminous intensity 1) Test condition IF = 20 mA Part TLMW3100 TLMW3101 TLMW3102 Chromaticity coordinate x acc. to CIE 1931 Chromaticity coordinate y acc. to CIE 1931 Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV 1) Symbol IV IV IV x y ϕ VF VR TCVF TCIV Min 80 80 125 Typ. 140 Max 200 320 Unit mcd mcd mcd IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA IF = 20 mA IF = 20 mA TLMW3100 TLMW3100 0.33 0.33 ± 60 3.5 5 -4 - 0.5 4.2 deg V V mV/K %/K in one Packing Unit IVmax/IVmin ≤ 1.6 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 90 PV - Power Dissipation ( mW ) IF - Forward Current ( mA ) 25 20 15 10 5 0 16192 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 16191 T amb - Ambient Temperature ( ° C ) T amb - Ambient Temperature ( ° C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for AlInGaP www.vishay.com 2 Document Number 83143 Rev. 1.7, 31-Aug-04 VISHAY TLMW310. Vishay Semiconductors 30 I F - Forward Current ( mA ) 25 20 15 10 5 0 0 II I V rel - Relative Luminous Intensity MTTF, confidence level 60% failure criteria IV/IV0 = 50% Iı IIı 5000h 10000h 100 90 80 70 60 50 40 30 20 10 0 400 450 500 550 600 650 700 750 800 16196 I 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C ) 16193 λ - Wavelength ( nm ) Figure 3. Forward Current vs. Ambient Temperature for AlInGaP Figure 6. Relative Intensity vs. Wavelength 10 I Vrel - Relative Luminous Intensity I Vrel - Relative Luminous Intensity 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 1 0.1 0.01 1 16194 10 I F - Forward Current ( mA ) 100 16197 Tamb - Ambient Temperature ( ° C ) Figure 4. Relative Luminous Intensity vs. Forward Current Figure 7. Rel. Luminous Intensity vs. Ambient Temperature 100 f - Chromaticity coordinate shift (x,y) 0.345 White 0.340 0.335 0.330 Y 0.325 0.320 0.315 X I F - Forward Current ( mA ) 10 1 2.0 16195 2.5 3.0 3.5 4.0 4.5 5.0 V F - Forward Voltage ( V ) 16198 0 10 20 30 40 50 60 I F - Forward Current ( mA ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Chromaticity Coordinate Shift vs. Forward Current Document Number 83143 Rev. 1.7, 31-Aug-04 www.vishay.com 3 TLMW310. Vishay Semiconductors VISHAY 3.95 3.90 I F - Forward Voltage ( V ) 3.85 3.80 3.75 3.70 3.65 3.60 3.55 3.50 3.45 0 10 20 30 40 50 60 70 80 90 100 16199 T amb - Ambient Temperature ( ° C ) Figure 9. Forward Voltage vs. Ambient Temperature 0° I V re l - Relative Luminous Intensity 10° 20° 30° 1.0 0.9 0.8 0.7 0.6 40° 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 95 10319 Figure 10. Rel. Luminous Intensity vs. Angular Displacement 0.50 Coordinates of Colorgroups 0.45 D65 0.40 b 0.35 a 0.30 0.25 0.20 0.20 3 c d 5 e f A . . 4 a= b= c= d= e= f= 20000K 10000K 7000K 6000K 5000K 4000K 0.25 0.30 0.35 0.40 0.45 0.50 16284 Coordinates of Colorgroups Figure 11. Coordinates of Colorgroups www.vishay.com 4 Document Number 83143 Rev. 1.7, 31-Aug-04 VISHAY Package Dimensions in mm TLMW310. Vishay Semiconductors 3.5 ± 0.2 + 0.10 1.65- 0.05 technical drawings according to DIN specifications 0.85 Mounting Pad Layout Pin identification 1.2 area covered with solder resist 2.6 (2.8) + 0.15 2.2 C A 2.8 4 1.6 (1.9) ∅ 2.4 3 + 0.15 Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.541-5025.01-4 Issue: 7; 05.04.04 95 11314 Document Number 83143 Rev. 1.7, 31-Aug-04 4 www.vishay.com 5 TLMW310. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83143 Rev. 1.7, 31-Aug-04