B150

New Product B120 thru B160 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-214AC (SMA) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. 1.0 A 20 V to 60 V 30 A 0.52 V, 0.75 V 125 °C, 150 °C For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. Note • These devices are not AEC-Q101 qualified MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range VRRM IF(AV) IFSM dV/dt TJ TSTG - 65 to + 125 - 65 to + 150 SYMBOL B120 B12 20 B130 B13 30 B140 B14 40 1.0 30 10 000 - 65 to + 150 B150 B15 50 B160 B16 60 V A A V/μs °C °C UNIT ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum reverse current at rated VR Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Document Number: 88946 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 TEST CONDITIONS 1.0 A TA = 25 °C TA = 100 °C SYMBOL VF (1) IR (2) B120 B130 0.52 0.2 6.0 5.0 B140 B150 0.75 B160 UNIT V mA New Product B120 thru B160 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA (1) RθJL (1) B120 B130 B140 95 B150 B160 UNIT °C/W 30 Note (1) P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N B140-E3/61T B140-E3/5AT UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 0.8 Resistive or Inductive Load B150 and B160 B150 and B160 0.7 D = 0.8 D = 0.5 D = 0.3 0.5 0.4 0.3 T 0.2 0.1 D = tp/T 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 tp D = 0.2 D = 0.1 D = 1.0 Average Forward Rectified Current (A) 1.0 Average Power Loss (W) 0.6 0.8 B120 thru B140 0.6 0.4 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 0 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Forward Power Loss Characteristics 0.8 B120 thru B140 0.7 40 Average Power Loss (W) D = 0.5 0.6 D = 0.3 0.5 0.4 0.3 T 0.2 0.1 D = tp/T 0 0 0.2 0.4 0.6 0.8 1.0 1.2 tp D = 0.2 D = 0.1 D = 1.0 Peak Forward Surge Current (A) D = 0.8 30 20 10 0 1 10 100 Average Forward Current Number of Cycles at 50 Hz Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88946 Revision: 13-Oct-09 New Product B120 thru B160 Vishay General Semiconductor 10 100 000 Instantaneous Reverse Current (μA) Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C 1 B120 thru B140 B150 and B160 10 000 TJ = 150 °C 1000 100 TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.1 10 1 B120 thru B140 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Leakage Characteristics 10 1000 TJ = 150 °C TJ = 125 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 1 Junction Capacitance (pF) 100 TJ = 25 °C 0.1 B150 and B160 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 0.1 B120 thru B140 B150 and B160 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 6 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88946 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1