0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
B2S

B2S

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    B2S - Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier - Vishay Siliconix

  • 数据手册
  • 价格&库存
B2S 数据手册
New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier ~ ~ FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: TO-269AA (MBS) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body ~ ~ TO-269AA (MBS) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. 0.5 A 200 V, 400 V, 600 V 30 A 5 µA 1.0 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output rectified current on glass-epoxy P.C.B. (Fig. 1) Peak forward surge current 10 msec single half sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM I2t TJ, TSTG SYMBOL B2S B2 200 140 200 B4S B4 400 280 400 0.5 (1) 30 5.0 - 55 to + 150 B6S B6 600 420 600 V V V A A A 2s °C UNIT Note: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Max. instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode Typical junction capacitance per diode Document Number: 88893 Revision: 01-Feb-08 TEST CONDITIONS 0.5 A TA = 25 °C TA = 125 °C 4.0 V, 1 MHz SYMBOL VF IR CJ VALUE 1.0 5.0 100 13 UNIT V µA pF www.vishay.com 1 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com New Product B2S, B4S & B6S Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads SYMBOL RθJA RθJL B2S B4S 90 40 B6S UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N B2S-E3/80 UNIT WEIGHT (g) 0.22 PREFERRED PACKAGE CODE 80 BASE QUANTITY 3000 DELIVERY MODE 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.8 10 Average Forward Rectified Current (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Resistive or Inductive Load 0 0 20 40 60 80 100 120 140 160 Glass Epoxy P.C.B. Instantaneous Forward Current (A) TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C 0.1 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Figure 1. Derating Curve for Output Rectified Current Figure 3. Typical Forward Voltage Characteristics Per Diode 35 1000 Peak Forward Surge Current (A) 30 25 20 15 10 5 0 1 10 100 f = 50 Hz Instantaneous Reverse Leakage Current (µA) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 1.0 Cycle 0.01 10 20 30 40 50 60 70 80 90 100 Number of Cycles Percent of Rated Peak Reverse Voltage (%) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 4. Typical Reverse Leakage Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88893 Revision: 01-Feb-08 New Product B2S, B4S & B6S Vishay General Semiconductor 100 Junction Capacitance (pF) 10 1 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.029 (0.74) 0.017 (0.43) TO-269AA (MBS) Mounting Pad Layout 0.023 MIN. (0.58 MIN.) 0.161 (4.10) 0.144 (3.65) 0.272 (6.90) 0.252 (6.40) 0.272 MAX. (6.91 MAX.) 0.030 MIN. (0.76 MIN.) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0 to 8° 0.205 (5.21) 0.195 (4.95) 0.049 (1.24) 0.039 (0.99) 0.062 (1.57) 0.058 (1.47) 0.105 (2.67) 0.095 (2.41) 0.106 (2.70) 0.090 (2.30) 0.008 (0.20) 0.004 (0.10) 0.114 (2.90) 0.110 (2.80) 0.058 (1.47) 0.054 (1.37) 0.114 (2.90) 0.094 (2.40) 0.0075 (0.19) 0.0065 (0.16) 0.038 (0.96) 0.019 (0.48) 0.016 (0.41) 0.006 (0.15) 0.018 (0.46) 0.014 (0.36) Document Number: 88893 Revision: 01-Feb-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1

很抱歉,暂时无法提供与“B2S”相匹配的价格&库存,您可以联系我们找货

免费人工找货
MB2S
  •  国内价格
  • 1+0.10146
  • 30+0.09783
  • 100+0.09421
  • 500+0.08696
  • 1000+0.08334
  • 2000+0.08116

库存:0

MB2S
    •  国内价格
    • 1+1.30424
    • 30+1.25629
    • 100+1.16039
    • 500+1.06449
    • 1000+1.01654

    库存:3

    MB2S-TP
    •  国内价格
    • 1+0.2625
    • 100+0.245
    • 300+0.2275
    • 500+0.21
    • 2000+0.20125
    • 5000+0.196

    库存:773

    MB2S-E3/80
    •  国内价格
    • 1+1.30828
    • 10+1.25983
    • 100+1.14354
    • 500+1.08539

    库存:23

    TPD5V0L1B2S9
    •  国内价格
    • 1+0.11786
    • 10+0.10816
    • 30+0.10622

    库存:100

    X49SD8MSB2SI
    •  国内价格
    • 1+0.81266
    • 100+0.75622
    • 300+0.69979
    • 500+0.64335
    • 2000+0.61514
    • 5000+0.59821

    库存:0

    D5V0L1B2S9-7
      •  国内价格
      • 1+0.3601
      • 10+0.3324
      • 30+0.32686
      • 100+0.31024

      库存:0

      X49SM8MSB2SC
      •  国内价格
      • 1+0.39
      • 100+0.364
      • 300+0.338
      • 500+0.312
      • 2000+0.299
      • 5000+0.2912

      库存:2647

      X49SD8MSB2SC
      •  国内价格
      • 1+0.3312
      • 100+0.3082
      • 300+0.2852
      • 500+0.2622
      • 2000+0.2507
      • 5000+0.2438

      库存:0

      X49SD8MSB2SI
      •  国内价格
      • 1+0.35
      • 30+0.3375
      • 100+0.325
      • 500+0.3
      • 1000+0.2875
      • 2000+0.28

      库存:0