BAS170WS

VISHAY BAS170WS Vishay Semiconductors Schottky Diodes Features • • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing 17431 Mechanical Data Case: SOD-323 Plastic Package Weight: approx. 4 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAS170WS Ordering code BAS170WS-GS18 or BAS170WS-GS08 73 Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Surge forward current Power dissipation1) 1) Test condition Tamb = 25 °C tp < 1 s, Tamb = 25 °C Tamb = 25 °C Symbol VRRM IF IFSM Ptot Value 70 70 600 200 Unit V mA mA mW Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air1) Junction temperature Operating temperature range Storage temperature range 1) Test condition Symbol RθJA Tj Tamb TS Value 650 150 - 55 to + 125 - 55 to +150 Unit °C/W °C °C °C Valid provided that electrodes are kept at ambient temperature Document Number 85653 Rev. 1.2, 18-Nov-03 www.vishay.com 1 BAS170WS Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current Forward voltage Forward voltage1) Capacitance Charge carrier lifetime Differential forward resistance 1) VISHAY Test condition IR = 10 µA (pulsed) VR =50 V V R = 70 V IF = 200 mA I