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BY268

BY268

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BY268 - Fast Avalanche Sinterglass Diode - Vishay Siliconix

  • 数据手册
  • 价格&库存
BY268 数据手册
BY268 / BY269 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package e2 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High voltage fast rectification diode 949539 Mechanical Data Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part BY268 BY269 Type differentiation VR = 1400 V; IFAV = 0.8 A VR = 1600 V; IFAV = 0.8 A SOD-57 SOD-57 Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A see electrical characteristics tp = 10 ms, half sinewave Test condition Part BY268 BY269 BY268 BY269 Symbol VRSM VRSM VR VR IFSM IFAV Tj = Tstg ER Value 1600 1800 1400 1600 20 0.8 - 55 to + 175 10 Unit V V V V A A °C mJ Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition on PC board with spacing 25 mm L = 10 mm, TL = constant Part Symbol RthJA RthJA Value 100 45 Unit K/W K/W Document Number 86005 Rev. 1.6, 13-Apr-05 www.vishay.com 1 BY268 / BY269 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Test condition IF = 0.4 A VR = 1400 V VR = 1600 V VR = 1400 V, Tj = 100 °C VR = 1600 V, Tj = 100 °C Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BY268 BY269 BY268 BY269 Part Symbol VF IR IR IR IR trr 1 1 Min Typ. Max 1.25 2 2 15 15 400 Unit V µA µA µA µA ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) RthJA –Therm.Resist. Junction/ Ambient ( K/W) 120 I FAV - Average Forward Current ( A ) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 V R = VRRM half sinewave 20 40 60 R thJA=100 K/W PCB: d = 25 mm 100 80 60 l 40 20 0 0 5 10 15 TL= constant 20 25 30 l – Lead Length ( mm ) l R thJA = 45 K/W l=10mm 80 100 120 140 160 180 94 9090 16413 T amb - Ambient Temperature ( ° C ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 10 1000 V R = VRRM I R - Reverse Current ( µA ) I F - Forward Current ( A) 1 Tj =175° C Tj = 25 ° C 0.1 100 10 0.01 0.001 0.0 16412 1 0.5 1.0 1.5 2.0 V F - Forward V oltage ( V ) 2.5 16414 25 50 75 100 125 150 175 Tj - Junction T emperature ( °C ) Figure 2. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86005 Rev. 1.6, 13-Apr-05 BY268 / BY269 Vishay Semiconductors P – Reverse Power Dissipation ( mW ) R 900 CD – Diode Capacitance ( pF ) 35 V R = VRRM 30 25 20 15 10 5 0 0.1 16416 800 700 600 500 400 300 200 100 0 25 f = 1 MHz PR -Limit @100 % VR PR -Limit @ 80 % VR 16415 50 75 100 125 150 Tj – Junction Temperature ( °C ) 175 1 10 100 V R – Reverse Voltage ( V ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. Cathode Identification ISO Method E 94 9538 0.82 (0.032) max. 26(1.014) min. 4.0 (0.156) max. 26(1.014) min. Document Number 86005 Rev. 1.6, 13-Apr-05 www.vishay.com 3 BY268 / BY269 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86005 Rev. 1.6, 13-Apr-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1
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