BYG24J

BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features • • • • • Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Wave and reflow solderable 15811 Applications Freewheeling diodes in SMPS and converters Snubber diodes Parts Table Part BYG 24 D BYG 24 G BYG 24 J Type differentiation VR = 200 V @ IFAV = 1.5 A VR = 400 V @ IFAV = 1.5 A VR = 600 V @ IFAV = 1.5 A DO-214AC DO-214AC DO-214AC Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition Part BYG 24 D BYG 24 G BYG 24 J Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 25 °C tp = 10 ms, half-sinewave Symbol VR = VRRM VR = VRRM VR = VRRM IFSM IFAV Tj = Tstg ER Value 200 400 600 30 1.5 - 55 to + 150 20 Unit V V V A A °C mJ Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction case Junction ambient epoxy glass hard tissue 35 µm * 17 mm2 cooper area per electrode epoxy glass hard tissue 35 &muMm * 50 mm2 cooper area per electrode RthJA 125 K/W Test condition Part Symbol RthJC RthJA Value 25 150 Unit K/W K/W Document Number 86067 Rev. 1.2, 19-Oct-04 www.vishay.com 1 BYG24 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Breakdown voltage IF = 1 A IF = 1.5 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 µA BYG 24 D BYG 24 G BYG 24 J Reverse recovery time IF = 0.5 A; IR = 1 A; iR = 0.25 A Test condition Part Symbol VF VF IR IR V(BR)R V(BR)R V(BR)R trr 200 400 600 140 Min Typ. Max 1.15 1.25 1 10 Unit V V µA µA V V V ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) PR – Reverse Power Dissipation ( mW ) 60 RthJA= 50 40 30 20 10 0 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) 125K/W 155K/W 175K/W PR–Limit @100%VR VR = VRRM 100.00 I F – Forward Current ( A ) 10.00 Tj=150°C 1.00 Tj=25°C 0.10 PR–Limit @80%VR 0.01 0.0 16826 0.5 1.0 1.5 2.0 2.5 3.0 16 VF – Forward Voltage ( V ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 3. Forward Current vs. Forward Voltage 100 I FAV– Average Forward Current ( A ) I R– Reverse Current ( mA ) 1.8 VR = VRRM 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 150 16827 VR=VRRM half sinewave RthJAv25K/W thJA=25K/W 10 RthJA=125K/W RthJA=150K/W 1 16825 0 20 40 60 80 100 120 140 160 Tj – Junction Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 2. Reverse Current vs. Junction Temperature Figure 4. Average Forward Current vs. Ambient Temperature www.vishay.com 2 Document Number 86067 Rev. 1.2, 19-Oct-04 BYG24 Vishay Semiconductors 30 C D – Diode Capacitance ( pF ) f=1MHz 25 20 15 10 5 0 0.1 16828 1.0 10.0 VR – Reverse Voltage ( V ) 100.0 Figure 5. Diode Capacitance vs. Reverse Voltage Dimensions in inches (millimeters) 5.3 +0.2 / -0.4 4.4 +0.1 / -0.2 ISO Method E technical drawings according to DIN specifications 2.15 ± 0.15 0.1 ± 0.07 3 +0.3 / -0.5 2.6 +0.2 / -0.3 1.5 +0.2 / -0.1 0.2 Plastic case JEDEC DO 214 similar to SMA Cathode indicated by a band 14275-1 Document Number 86067 Rev. 1.2, 19-Oct-04 www.vishay.com 3