BYW82

BYW82, BYW83, BYW84, BYW85, BYW86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading 949588 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg APPLICATIONS • Rectification, general purpose PARTS TABLE PART BYW82 BYW83 BYW84 BYW85 BYW86 TYPE DIFFERENTIATION VR = 200 V; IFAV = 3 A VR = 400 V; IFAV = 3 A VR = 600 V; IFAV = 3 A VR = 800 V; IFAV = 3 A VR = 1000 V; IFAV = 3 A PACKAGE SOD-64 SOD-64 SOD-64 SOD-64 SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART BYW82 BYW83 Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYW84 BYW85 BYW86 Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2t-rating Junction and storage temperature range tp = 20 μs, half sine wave, Tj = 175 °C I(BR)R = 1 A, Tj = 175 °C tp = 10 ms, half sine wave SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IFAV PR ER i2t Tj = Tstg VALUE 200 400 600 800 1000 100 18 3 1000 20 40 - 55 to + 175 UNIT V V V V V A A A W mJ A2s °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 25 70 UNIT K/W K/W Document Number: 86051 Rev. 1.7, 25-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 161 BYW82, BYW83, BYW84, BYW85, BYW86 Vishay Semiconductors Standard Avalanche Sinterglass Diode ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge TEST CONDITION IF = 3 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 μA, tp/T = 0.01, tp = 0.3 ms VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = 1 A, dI/dt = 5 A/μs, VR = 50 V lF = 1 A, dI/dt = 5 A/μs SYMBOL VF IR IR V(BR) CD trr trr Qrr MIN. TYP. 0.1 5 40 3.5 4.5 8 MAX 1 1 10 1600 60 5 7.5 12 UNIT V μA μA V pF μs μs μC TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 40 100 RthJA - Therm. Resist. Junction/Ambient (K/W) 30 IF - Forward Current (A) 10 Tj = 175 °C 1 Tj = 25 °C 0.1 20 l 10 l 0.01 0 0 94 9563 TL = constant 5 10 15 20 25 30 0.001 0 16360 0.4 0.8 1.2 1.6 2.0 I - Lead Length (mm) VF - Forward Voltage (V) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Forward Current vs. Forward Voltage IFAV - Average Forward Current (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 180 RthJA = 70 K/W PCB: d = 25 mm VR = VRRM half sinewave RthJA = 25 K/W I = 10 mm PR - Reverse Power Dissipation (mW) 350 VR = VRRM 300 250 200 150 100 50 0 25 50 75 100 125 150 175 PR-Limit at 80 % VR PR-Limit at 100 % VR 16361 Tamb - Ambient Temperature (°C) 16363 Tj - Junction Temperature (°C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature www.vishay.com 162 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86051 Rev. 1.7, 25-Aug-10 BYW82, BYW83, BYW84, BYW85, BYW86 Standard Avalanche Sinterglass Diode 1000 100 Vishay Semiconductors CD - Diode Capacitance (pF) VR = VRRM f = 1 MHz 80 IR - Reverse Current (A) 100 60 40 10 20 1 25 16362 0 50 75 100 125 150 175 16364 0.1 1 10 100 Tj - Junction Temperature (°C) VR - Reverse Voltage (V) Fig. 5 - Reverse Current vs. Junction Temperature Zthp - Thermal Resistance for Pulse Cond. (K/W) Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 100 tp/T = 0.5 tp/T = 0.2 10 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 1 10 -4 94 9568 V RRM = 1000 V RthJA = 70 K/W Tamb = 25°C 45 °C tp/T = 0.01 70°C 100°C 60 °C 10 -3 10 -2 10 -1 10 0 10 1 10 -1 tp - Pulse Length (s) 10 0 10 1 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86051 Rev. 1.7, 25-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 163 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1