BZG03C10

BZG03C-Series Vishay Semiconductors Zener Diodes Features • • • • • • • Glass passivated junction High reliability e3 Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads Wave and reflow solderable Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 15811 Applications Voltage stabilization Mechanical Data Case: DO-214AC Weight: approx. 77 mg Packaging Codes/Options: TR / 1.5 k 7 " reel TR3 / 6 k 13 " reel 6 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Test condition RthJA < 25 K/W, Tamb = 100 °C RthJA < 100 K/W, Tamb = 50 °C Non repetitive peak surge power tp = 100 µs sq.pulse, Tj = 25 °C dissipation prior to surge Junction temperature Storage temperature range Symbol Pdiss Pdiss PZSM Tj Tstg Value 3 1.25 600 150 - 65 to + 150 Unit W W W °C °C Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction lead Junction ambient mounted on epoxy-glass hard tissue, Fig. 1a mounted on epoxy-glass hard tissue, Fig. 1b mounted on Al-oxid-ceramic (Al2O3), Fig. 1b Test condition Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 0.5 A Symbol VF Min Typ. Max 1.2 Unit V Document Number 85593 Rev. 1.7, 15-Sep-05 www.vishay.com 1 BZG03C-Series Vishay Semiconductors Electrical Characteristics BZG03C... Partnumber Zener Voltage Range Dynamic Resistance Test Current IZT mA max 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500 750 850 1000 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 2 2 2 min 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 Temperature Coefficient of Zener Voltage TKVZ@ IZT %/K max 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 µA max 10 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 Reverse Leakage Current IR @ V R V VZ @ IZT V min BZG03C10 BZG03C11 BZG03C12 BZG03C13 BZG03C15 BZG03C16 BZG03C18 BZG03C20 BZG03C22 BZG03C24 BZG03C27 BZG03C30 BZG03C33 BZG03C36 BZG03C39 BZG03C43 BZG03C47 BZG03C51 BZG03C56 BZG03C62 BZG03C68 BZG03C75 BZG03C82 BZG03C91 BZG03C100 BZG03C110 BZG03C120 BZG03C130 BZG03C150 BZG03C160 BZG03C180 BZG03C200 BZG03C220 BZG03C240 BZG03C270 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 158 168 188 208 228 251 typ 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 max 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 233 256 289 rzj and TKVZ @ IZT Ω typ 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 350 400 450 www.vishay.com 2 Document Number 85593 Rev. 1.7, 15-Sep-05 BZG03C-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) a) b) I F – Forward Current (A ) 3.0 5.0 2.5 2.0 1.5 1.0 0.5 2.0 1.5 10.0 2.0 25.0 94 9313 1.0 25.0 94 9581 0 0 0.5 1.0 1.5 2.0 V F – Forward Voltage ( V ) Figure 1. Boards for RthJA definition (copper overlay 35µ) Figure 3. Forward Current vs. Forward Voltage 3 RthJA=25K/W 2 RthJA=100K/W 1 PZSM – Non-Repetitive Surge Power Dissipation (W) 4 Ptot –Total PowerDissipation(W ) 10000 1000 100 0 0 94 9580 40 80 120 160 200 94 9582 10 0.01 0.1 1 10 100 Tamb – Ambient Temperature(°C ) tp – Pulse Length ( ms ) Figure 2. Total Power Dissipation vs. Ambient Temperature Z thp–Thermal Resistance for Pulse Cond.(K/W Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse Length 1000 100 tp/T=0.5 10 tp/T=0.2 tp/T=0.1 tp/T=0.05 tp/T=0.02 1 10–5 10–4 10–3 tp/T=0.01 10–2 10–1 100 101 102 94 9583 tp – Pulse Length ( s ) Figure 5. Thermal Response Document Number 85593 Rev. 1.7, 15-Sep-05 www.vishay.com 3 BZG03C-Series Vishay Semiconductors Package Dimensions in mm (Inches) 19628 www.vishay.com 4 Document Number 85593 Rev. 1.7, 15-Sep-05 BZG03C-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85593 Rev. 1.7, 15-Sep-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1