BZM55C9V1

BZM55-Series Vishay Semiconductors Small Signal Zener Diodes Features • Saving space • Hermetic sealed parts e2 • Electrical data identical with the devices BZT55..Series / TZM..Series • Fits onto SOD323/SOD110 footprints • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612315 Applications • Voltage stabilization Mechanical Data Case: MicroMELF Weight: approx. 12 mg Packaging codes/options: TR / 2.5 k per 7" reel, 12.5 k/box TR3 / 10 k per 13" reel, 10 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Z-current Junction temperature Storage temperature range Test condition RthJA ≤ 300 K/W Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 - 65 to + 175 Unit mW mA °C °C Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Junction tie point Test condition mounted on epoxy-glass hard tissue, Fig. 1 35 µm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA RthJL Value 500 300 Unit K/W K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.5 Unit V Document Number 85597 Rev. 1.9, 10-Mar-06 www.vishay.com 1 BZM55-Series Vishay Semiconductors Electrical Characteristics BZM55C.. Partnumber Zener Voltage Range1) VZ at IZT Dynamic Resistance rzjT at IZT, f = 1kHz Ω max 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 0.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 < 85 < 85 < 90 < 90 < 90 < 90 < 90 < 80 < 60 < 40 < 10