BZT03C7V5

VISHAY BZT03..Series Vishay Semiconductors Silicon Zener-Diodes with Surge Current Specification Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits Mechanical Data Case:SOD57 Weight: 370 mg (max.500 mg) Packaging Codes/Options: TAP / 5 K Ammopack (52 mm tape) / 25 K/box TR / 5 K 10" reel 949539 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Repetitive peak reverse power dissipation Non repetitive peak surge power tp = 100 µs, Tj = 25 °C dissipation Junction temperature Storage temperature range Test condition l = 10 mm, TL = 25 °C Tamb = 25 °C Symbol PV PV PZRM PZSM Tj Tstg Value 3.25 1.3 10 600 175 - 65 to + 175 Unit W W W W °C °C Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA Value 46 100 Unit K/W K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 0.5 A Symbol VF Min Typ. Max 1.2 Unit V Document Number 85599 Rev. 4, 10-Sep-03 www.vishay.com 1 BZT03..Series Vishay Semiconductors Electrical Characteristics BZT03C... Partnumber Zener Voltage Range Dynamic Resistance rzj and TKVZ @ IZ Ω max 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 233 256 289 typ 1 1 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 350 400 450 max 2 2 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500 750 850 1000 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 2 2 2 Test Curre nt IZT mA min 0 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 Temperature Coefficient of Zener Voltage TCVZ @ IZT %/K max 0.07 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 Reverse Leakage Current IR @ VR µA max 1500 1000 750 600 20 10 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 V Clamping VISHAY Stand-off VZ @ IZT V min BZT03C6V2 BZT03C6V8 BZT03C7V5 BZT03C8V2 BZT03C9V1 BZT03C10 BZT03C11 BZT03C12 BZT03C13 BZT03C15 BZT03C16 BZT03C18 BZT03C20 BZT03C22 BZT03C24 BZT03C27 BZT03C30 BZT03C33 BZT03C36 BZT03C39 BZT03C43 BZT03C47 BZT03C51 BZT03C56 BZT03C62 BZT03C68 BZT03C75 BZT03C82 BZT03C91 BZT03C100 BZT03C110 BZT03C120 BZT03C130 BZT03C150 BZT03C160 BZT03C180 BZT03C200 BZT03C220 BZT03C240 BZT03C270 1) 2) V(CL)R1) @ IRMS V max 9.3 10.2 11.3 12.3 13.3 14.8 15.7 17.0 18.9 20.9 22.9 25.6 28.4 31.0 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114 126 139 152 167 185 204 224 249 276 305 336 380 34.0 31.0 26.5 24.4 22.7 20.3 19.1 17.7 15.9 14.4 13.1 11.7 10.6 9.7 8.9 7.9 7.1 6.5 6.0 5.5 4.9 4.6 4.2 3.8 3.5 3.2 2.9 2.6 2.4 2.2 2.0 1.8 1.6 1.5 1.3 1.2 1.1 1.0 0.9 0.8 A IR@ VR 2) µA max 3000 2000 1500 1200 50 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 V typ 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188 208 228 251 10/1000 exp. falling pulse tp = 1000 µs down to 50 % Stand-off voltage = recommended suplly voltage www.vishay.com 2 Document Number 85599 Rev. 4, 10-Sep-03 VISHAY Electrical Characteristics BZT03D... Partnumber Zener Voltage Range Dynamic Resistance rzj and TKVZ @ IZ Ω max 6.8 7.5 8.25 9 10 11 12.1 13.2 14.3 16.5 17.6 19.8 22 24.2 26.4 29.7 33 36.3 39.6 42.9 47.3 51.7 56.1 61.6 68.2 74.8 82.5 90.2 100 110 121 132 143 165 176 198 220 242 264 297 typ 1 1 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 350 400 450 max 2 2 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500 750 850 1000 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 2 2 2 Test Curre nt IZT mA min 0 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 Temperature Coefficient of Zener Voltage TCVZ @ IZT %/K max 0.07 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 Reverse Leakage Current IR @ V R µA max 1500 1000 750 600 20 10 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V BZT03..Series Vishay Semiconductors Clamping Stand-off VZ @ IZT V min BZT03D6V2 BZT03D6V8 BZT03D7V5 BZT03D8V2 BZT03D9V1 BZT03D10 BZT03D11 BZT03D12 BZT03D13 BZT03D15 BZT03D16 BZT03D18 BZT03D20 BZT03D22 BZT03D24 BZT03D27 BZT03D30 BZT03D33 BZT03D36 BZT03D39 BZT03D43 BZT03D47 BZT03D51 BZT03D56 BZT03D62 BZT03D68 BZT03D75 BZT03D82 BZT03D91 BZT03D100 BZT03D110 BZT03D120 BZT03D130 BZT03D150 BZT03D160 BZT03D180 BZT03D200 BZT03D220 BZT03D240 BZT03D270 1) 2) V(CL)R1) @ IRMS V max 9.5 10.5 11.6 12.6 13.7 15.2 16.2 17.5 19.1 21.8 23.4 26.3 29.2 31.9 34.6 39 43.5 47.5 51.5 56 62 67.5 73 81 89 97 107 117 130 143 157 172 187 213 229 256 284 314 364 388 A 34.0 31.0 26.5 24.4 22.7 20.3 19.1 17.7 15.9 14.4 13.1 11.7 10.6 9.7 8.9 7.9 7.1 6.5 6.0 5.5 4.9 4.6 4.2 3.8 3.5 3.2 2.9 2.6 2.4 2.2 2.0 1.8 1.6 1.5 1.3 1.2 1.1 1.0 0.9 0.8 IR@ VR 2) µA max 3000 2000 1500 1200 50 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 4.8 5.3 5.9 6.5 7.1 7.9 8.6 9.3 10.6 11.6 12.6 14.4 15.8 17.2 19.4 21.5 23.5 25.8 28 31 33.5 36.5 40 44.5 49 54 59 65 71 79 86 93 106 116 126 144 158 172 194 215 V typ 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 5.6 6.1 6.75 7.4 8.2 9 9.9 10.8 11.7 13.5 14.4 16.2 18 29.8 21.6 24.3 27 29.7 32.4 35.1 38.7 42.3 45.9 50.4 55.8 61.2 67.5 73.8 81.9 90 99 108 117 135 144 162 180 198 216 243 4.4 4.8 5.3 5.9 6.5 7.1 7.9 8.6 9.3 10.6 11.6 12.6 14.4 15.8 17.2 19.4 21.5 23.5 25.8 28 31 33.5 36.5 40 44.5 49 54 59 65 71 79 86 93 106 116 126 144 158 172 194 10/1000 exp. falling pulse tp = 1000 µs down to 50 % Stand-off voltage = recommended suplly voltage Document Number 85599 Rev. 4, 10-Sep-03 www.vishay.com 3 BZT03..Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 50 3 I F Forward Current (A ) – VISHAY 3.0 2.5 2.0 Tj =25°C 1.5 1.0 0.5 0 25 50 7 2 94 9086a 94 9585 0 0.5 1.0 1.5 2.0 V F – Forward Voltage ( V ) Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, RthJA≤100 K/W PZSM – Non-Repetitive Surge Power Dissipation (W ) Figure 3. Forward Current vs. Forward Voltage Ptot –Total Power Dissipation ( W ) 4 l=10mm 3 15mm l l 10000 Tj =25°C 1000 2 20mm 1 see Fig.1 0 0 40 80 TL=constant 100 120 160 200 94 9586 10 0.01 0.1 1 10 100 94 9584 Tamb – Ambient T emperature ( °C ) tp – Pulse Length ( ms ) Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse Length Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technicaldrawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. www.vishay.com 4 Document Number 85599 Rev. 4, 10-Sep-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to BZT03..Series Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85599 Rev. 4, 10-Sep-03 www.vishay.com 5