BZT55B10

BZT55-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Available with tighter tolerances Very high stability Low noise Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009 Applications • Voltage stabilization Mechanical Data Case: QuadroMELF Glass case SOD80 Weight: approx. 34 mg Packaging Codes/Options: GS08 / 2.5 k per 7" reel 12.5 k/box GS18 / 10 k per 13" reel 10 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Z-current Junction temperature Storage temperature range Test condition RthJA ≤ 300 K/W Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 - 65 to + 175 Unit mW mA °C °C Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Test condition on PC board 50 mm x 50 mm x 1.6 mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.5 Unit V Document Number 85637 Rev. 1.5, 10-Mar-06 www.vishay.com 1 BZT55-Series Vishay Semiconductors Electrical Characteristics BZT55C.. Partnumber Zener Voltage1) VZ at IZT Dynamic Resistance rzj at IZT, f = 1 kHz Ω max 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 < 85 < 85 < 90 < 90 < 90 < 90 < 90 < 80 < 60 < 40 < 10