CNY75GB

CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664) • Climatic classification 55/100/21 (IEC 60068 part 1) • Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection • Low temperature coefficient of CTR • CTR offered in 3 groups • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) • Rated recurring peak voltage (repetitive) VIORM = 600 VRMS • Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI ≥ 275 • Thickness through insulation ≥ 0.75 mm • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC B 6 C 5 E 4 1 2 3 A (+) C (-) nc V DE 17186 e3 Pb Pb-free For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. Description The CNY75A/ B/ C/ GA/ GB/ GC consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. VDE Standards These couplers perform safety functions according to the following equipment standards: Agency Approvals • UL1577, File No. E76222 System Code A, Double Protection • BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • VDE related features: • Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • FIMKO (SETI): EN 60950, Certificate No. 12399 DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements IEC 60950/ EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0804 IEC 60065 Telecommunication apparatus and data processing Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I - IV at mains voltage ≤ 300 V Document Number 83536 Rev. 1.7, 26-Oct-04 Safety for mains-operated electronic and related house hold apparatus www.vishay.com 1 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Order Information Part CNY75A CNY75B CNY75C CNY75GA CNY75GB CNY75GC Remarks CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 For additional information on the available options refer to Option Information. G = Leadform 10.16 mm; G is not marked on the body Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature t p ≤ 10 µ s Test condition Symbol VR IF IFSM Pdiss Tj Value 5 60 3 100 125 Unit V mA A mW °C Output Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp ≤ 10 ms Test condition Symbol VCBO VCEO VECO IC ICM Pdiss Tj Value 90 90 7 50 100 150 125 Unit V V V mA mA mW °C Coupler Parameter AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s t = 1 min Test condition Symbol VISO Ptot Tamb Tstg Tsld Value 3750 250 - 55 to + 100 - 55 to + 125 260 Unit VRMS mW °C °C °C www.vishay.com 2 Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Junction capacitance VR = 6 V VR = 0, f = 1 MHz Test condition IF = 50 mA Symbol VF IR Cj 50 Min Typ. 1.25 Max 1.6 10 Unit V µA pF Output Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector-emitter leakage current Test condition IC = 100 µA IC = 1 mA IE = 100 µA VCE = 20 V, IF = 0 Symbol VCBO VCEO VECO ICEO Min 90 90 7 150 Typ. Max Unit V V V nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test condition IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz Symbol VCEsat fc Ck 110 0.3 Min Typ. Max 0.3 Unit V kHz pF Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 1 mA Part CNY75GA CNY75GB CNY75GC VCE = 5 V, IF = 10 mA CNY75GA CNY75GB CNY75GC Symbol CTR CTR CTR CTR CTR CTR Min 15 30 60 63 100 160 1.25 200 320 Typ. Max Unit % % % % % % Switching Characteristics Parameter Test condition Symbol Unit CNY75GA CNY75GB CNY75GC IF mA 10 10 10 tD µs 2.0 2.5 2.8 tr µs 2.5 3.0 4.2 Current Delay Rise time Storage Fall time Turn-on time Turn-off time Turn-on time Turn-off time VCC = 5 V, RL = 100 Ω (see figure 3) tS µs 0.3 0.3 0.3 tf µs 2.7 3.7 4.7 ton µs 4.5 5.5 7.0 toff µs 3.0 4.0 5.0 VCC = 5 V, RL = 1.0 kΩ (see figure 4) ton µs 10.0 16.5 11.0 toff µs 25.0 20.0 37.5 Document Number 83536 Rev. 1.7, 26-Oct-04 www.vishay.com 3 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Forward current Test condition Symbol IF Min Typ. Max 130 Unit mA Output Parameter Power dissipation Test condition Symbol Pdiss Min Typ. Max 265 Unit mW Coupler Parameter Rated impulse voltage Safety temperature Test condition Symbol VIOTM Tsi Min Typ. Max 6 150 Unit kV °C Insulation Rated Parameters Parameter Partial discharge test voltage Routine test Partial discharge test voltage Lot test (sample test) Insulation resistance Test condition 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V VIO = 500 V, Tamb ≤ 100 °C VIO = 500 V, Tamb ≤ 150 °C (construction test only) Symbol Vpd VIOTM Vpd RIO RIO RIO Min 1.6 6 1.3 1012 1011 109 Typ. Max Unit kV kV kV Ω Ω Ω VIOTM Ptot - Total Power Dissipation ( mW ) 275 250 225 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 13930 Psi (mW) t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM Isi (mA) 0 t1 tTr = 60 s t2 t3 ttest t4 tstres t 95 10923 Tamb - Ambient Temperature ( °C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 www.vishay.com 4 Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA) 300 P tot –Total Power Dissipation ( mW) Coupled device 250 200 Phototransistor V CE=30V I F=0 1000 150 IR-diode 100 50 0 0 40 80 120 100 10 1 0 95 11038 25 50 75 100 96 1 1700 Tamb – Ambient T emperature( °C ) Tamb – Ambient Temperature ( °C ) Figure 3. Total Power Dissipation vs. Ambient Temperature Figure 6. Collector Dark Current vs. Ambient Temperature 1000 I F - Forward Current ( mA ) I CB – Collector Base Current ( mA) 1 V CB=5V 0.1 100 10 0.01 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.001 1 95 11039 10 I F – Forward Current ( mA ) 100 V F - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage Figure 7. Collector Base Current vs. Forward Current CTRrel – Relative Current Transfer Ratio 100 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient Temperature (°C ) V CE=5V I F=10mA IC – Collector Current ( mA ) 1.5 V CE=5V 10 1 0.1 0.01 0.1 95 11040 1 10 100 96 11918 I F – Forward Current ( mA ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Figure 8. Collector Current vs. Forward Current Document Number 83536 Rev. 1.7, 26-Oct-04 www.vishay.com 5 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors VCEsat Collector Emitter Saturation V oltage (V) – 100 IC – Collector Current ( mA ) 1.0 CTR=50% 0.8 CNY75A 0.6 I F=50mA 20mA 10 10mA 5mA 1 0.4 20% 0.2 10% 0 1 10 I C – Collector Current ( mA ) 100 2mA 1mA CNY75A 0.1 0.1 95 11041 1 10 100 V CE – Collector Emitter Voltage ( V ) 95 11034 Figure 9. Collector Current vs. Collector Emitter Voltage Figure 12. Collector Emitter Saturation Voltage vs. Collector Current V – Collector Emitter Saturation Voltage (V) 100 IC – Collector Current ( mA ) 1.0 CTR=50% 0.8 CNY75B 0.6 20% I F=50mA 20mA 10 10mA 5mA 2mA 1mA 0.1 0.1 CNY75B 1 10 100 1 0.4 0.2 0 1 10 I C – Collector Current ( mA ) 100 10% 95 11042 V CE – Collector Emitter V oltage ( V ) 95 11043 Figure 10. Collector Current vs. Collector Emitter Voltage Figure 13. Collector Emitter Saturation Voltage vs. Collector Current VCEsat Collector Emitter Saturation Voltage (V ) – CEsat 1.0 CTR=50% 0.8 CNY75C 0.6 100.0 I F=50mA IC – Collector Current ( mA) 20mA 10mA 10.0 5mA 2mA 1.0 1mA CNY75C 0.1 0.1 1.0 10.0 100.0 0.4 0.2 20% 10% 0 1 10 I C – Collector Current ( mA ) 100 96 11919 V CE – Collector Emitter Voltage ( V ) 95 11044 Figure 11. Collector Current vs. Collector Emitter Voltage Figure 14. Collector Emitter Saturation Voltage vs. Collector Current www.vishay.com 6 Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors 1000 V CE=5V hFE – DC Current Gain CTR – Current Transfer Ratio ( % ) 1000 CNY75C(G) V CE=5V 100 800 600 400 200 0 0.01 10 1 0.1 1 10 100 95 11046 0.1 1 10 100 95 11035 I C – Collector Current ( mA ) I F – Forward Current ( mA ) Figure 15. DC Current Gain vs. Collector Current Figure 18. Current Transfer Ratio vs. Forward Current CNY75A(G) V CE=5V 100 ton / toff –Turn on / Turn off Time (ıµ s ) CTR – Current Transfer Ratio ( % ) 1000 50 CNY75A(G) Saturated Operation V S=5V RL=1kˇΩ toff 20 10 0 40 30 10 ton 1 0.1 95 11036 1 10 100 95 11033 0 5 10 15 20 I F – Forward Current ( mA ) I F – Forward Current ( mA ) Figure 16. Current Transfer Ratio vs. Forward Current Figure 19. Turn on / off Time vs. Forward Current CNY75B(G) V CE=5V 100 ton / toff –Turn on / Turn off Time ( µıs ) CTR – Current Transfer Ratio ( % ) 1000 50 CNY75B(G) Saturated Operation V S=5V RL=1kˇΩ toff 20 10 ton 0 0 5 10 15 20 40 30 10 1 0.1 95 11045 1 10 100 95 11048 I F – Forward Current ( mA ) I F – Forward Current ( mA ) Figure 17. Current Transfer Ratio vs. Forward Current Figure 20. Turn on / off Time vs. Forward Current Document Number 83536 Rev. 1.7, 26-Oct-04 www.vishay.com 7 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors 50 CNY75C(G) Saturated Operation V S=5V RL=1kˇΩ toff 20 CNY75C(G) Non Saturated Operation V S=5V RL=100ˇΩ 40 ton / toff –Turn on / Turn off Time ( µ s ) ton / toff –Turn on / Turn off Time ( µıs ) 15 ton 10 toff 5 30 20 10 ton 0 0 5 10 15 20 0 0 95 11049 2 4 6 8 10 95 11050 I F – Forward Current ( mA ) I C – Collector Current ( mA ) Figure 21. Turn on / off Time vs. Forward Current Figure 24. Turn on / off Time vs. Collector Current ton / toff –Turn on / Turn off Time ( ıµ s ) 20 CNY75A(G) Non Saturated Operation V S=5V RL=100ˇΩ Customer Code/ Identification/ Option 15 ton 10 toff 5 Product Code V DE UL Logo VDE Logo V XXXY 68 Plant Code 0 0 95 11032 2 4 6 8 10 Vishay Logo 17936 Package Code Date Code (year, week) I C – Collector Current ( mA ) Figure 22. Turn on / off Time vs. Collector Current Figure 25. Marking example ton / toff –Turn on / Turn off Time ( µıs ) 20 CNY75B(G) Non Saturated Operation V S=5V RL=100ˇΩ 15 10 ton 5 toff 0 0 2 4 6 8 10 95 11047 I C – Collector Current ( mA ) Figure 23. Turn on / off Time vs. Collector Current www.vishay.com 8 Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Package Dimensions in mm 14770 Package Dimensions in mm 14771 Document Number 83536 Rev. 1.7, 26-Oct-04 www.vishay.com 9 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83536 Rev. 1.7, 26-Oct-04