MBR1090

New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor High-Voltage Schottky Rectifier TMBS® TO-220AC ITO-220AC FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 2 1 2 MBR1090 MBR10100 PIN 1 PIN 2 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC MBRF1090 MBRF10100 PIN 1 PIN 2 CASE TO-263AB K 2 1 MBRB1090 MBRB10100 PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. 10 A 90 V, 100 V 150 A 0.65 V 150 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 133 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Voltage rate of change (rated VR) Isolation voltage (ITO-220AC only) From terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM VRWM VDC IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG MBR1090 90 90 90 10 150 130 0.5 10 000 1500 - 65 to + 150 MBR10100 100 100 100 UNIT V V V A A mJ A V/µs V °C Document Number: 89034 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1 0 A IF = 1 0 A IF = 2 0 A TC = 25 °C TC = 125 °C TC = 125 °C TJ = 25 °C TJ = 100 °C SYMBOL VALUE 0.80 0.65 0.75 100 6.0 UNIT Maximum instantaneous forward voltage (1) VF V Maximum reverse current at working peak reverse voltage (2) Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms IR µA mA THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA RθJC MBR 60 2.0 MBRF 3.5 MBRB 60 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC ITO-220AC TO-263AB TO-263AB PREFERRED P/N MBR10100-E3/4W MBRF10100-E3/4W MBRB10100-E3/4W MBRB10100-E3/8W UNIT WEIGHT (g) 1.845 1.661 1.384 1.384 PACKAGE CODE 4W 4W 4W 8W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Resistive or Inductive Load 160 Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave 140 Average Forward Current (A) 8 120 6 100 4 80 2 60 0 0 50 100 150 40 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89034 Revision: 24-Jun-09 New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor 100 100 TJ = 150 °C 10 TJ = 125 °C 1 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Case 10 1 0.1 TJ = 25 °C MBR(B) 0.1 0.01 0.1 1 10 100 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TJ = 150 °C 10 Junction to Case 10 TJ = 125 °C 1 1 0.1 0.1 0.01 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 MBRF 0.001 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 7. Typical Transient Thermal Impedance 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 Junction Capacitance (pF) 100 10 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 89034 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54)MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) PIN 1 PIN 2 CASE ITO-220AC 0.404 (10.26) 0.384 (9.75) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 45° REF. 0.076 (1.93) REF. 0.076 (1.93) REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.635 (16.13) 0.625 (15.87) 1 PIN 2 0.603 (15.32) 0.573 (14.55) 0.600 (15.24) 0.580 (14.73) 7° REF. 0.350 (8.89) 0.330 (8.38) 1 2 0.191 (4.85) 0.171 (4.35) 7° REF. 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027(0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.025 (0.64) 0.015 (0.38) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) TO-263AB 0.41 (10.45) 1 0.380 (9.65) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 MIN. (10.66) 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.33 (8.38) MIN. 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89034 Revision: 24-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1