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MBR10T100

MBR10T100

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    MBR10T100 - High Performance Schottky Generation 5.0, 10 A - Vishay Siliconix

  • 数据手册
  • 价格&库存
MBR10T100 数据手册
MBR10T100 Vishay High Power Products High Performance Schottky Generation 5.0, 10 A FEATURES Base cathode • • • • • • • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency RoHS COMPLIANT TO-220AC 1 Cathode 3 Anode Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Full lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level APPLICATIONS PRODUCT SUMMARY IF(AV) VR VF at 10 A at 125 °C 10 A 100 V 0.68 V • • • • • • • • High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling Dc-to-dc systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 10 Apk, TJ = 125 °C (typical) Range CHARACTERISTICS VALUES 100 0.62 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C MBR10T100 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 3 A, L = 12 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 TEST CONDITIONS 50 % duty cycle at TC = 159 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 10 850 A 200 54 IAS at TJ max. mJ A UNITS A Document Number: 94537 Revision: 24-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 MBR10T100 Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 10 A Forward voltage drop per leg VFM (1) 20 A 10 A 20 A Reverse leakage current per leg Junction capacitance per leg Series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 µs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C TYP. 400 8.0 MAX. 0.79 0.88 0.68 0.8 100 4 10 000 µA mA pF nH V/µs V UNITS High Performance Schottky Generation 5.0, 10 A VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 2 °C/W 0.5 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) MBR10T100 UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94537 Revision: 24-Jul-08 MBR10T100 High Performance Vishay High Power Products Schottky Generation 5.0, 10 A 100 Reverse Current - IR (mA) 100 175°C 10 150°C 1 0.1 0.01 0.001 0.0001 0 20 40 60 80 100 125°C 100°C 75°C 50°C 25°C Tj = 175°C Instantaneous Forward Current - IF (A) Reverse Voltage - VR (V) 10 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Tj = 125°C Junction Capacitance - CT (pF) 100 Tj = 25°C 1 0.0 0.5 1.0 1.5 10 0 20 40 60 80 100 120 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) D = 0.75 1 D = 0.5 D = 0.33 D = 0.25 D = 0.2 0.1 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94537 Revision: 24-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 MBR10T100 Vishay High Power Products High Performance Schottky Generation 5.0, 10 A 9 180° 120° 90° 60° 30° RMS Limit 180 Allowable Case Temperature (°C) 175 170 165 160 155 150 0 2 4 6 8 10 12 14 16 Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Square wave (D=0.50) 80% rated Vr applied see note (1) Average Power Loss - (Watts) 6 DC DC 3 0 0 3 6 9 12 15 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM (A) 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94537 Revision: 24-Jul-08 MBR10T100 High Performance Vishay High Power Products Schottky Generation 5.0, 10 A 100 Avalanche Current (A) Tj = 25°C 10 Tj = 125°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 100 Tj = 25°C Avalanche Energy (mJ) Tj = 125°C 10 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: 94537 Revision: 24-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 MBR10T100 Vishay High Power Products High Performance Schottky Generation 5.0, 10 A ORDERING INFORMATION TABLE Device code MBR 1 1 2 3 4 - 10 2 T 3 100 4 MBR series Current rating (10 = 10 A) T = Trench Voltage rating (100 = 100 V) Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95221 http://www.vishay.com/doc?95224 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94537 Revision: 24-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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