MCL4148_12

MCL4148, MCL4448 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • • • • • Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD-323 / SOT-23 footprints Electrical data identical with the devices 1N4148 and 1N4448 respectively MicroMELF package AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition 9612315 Applications • Extreme fast switches Mechanical Data Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3 / 10 k per 13" reel (8 mm tape), 10 k/box TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part MCL4148 MCL4448 Type differentiation VRRM = 100 V, VF at IF 50 mA = 1 V VRRM = 100 V, VF at IF 100 mA = 1 V Ordering code MCL4148-TR3 or MCL4148-TR MCL4448-TR3 or MCL4448-TR Remarks Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward continuous current Average forward current Power dissipation VR = 0 tp = 1 µs Test condition Symbol VRRM VR IFSM IFRM IF IFAV Ptot Value 100 75 2 450 200 150 500 Unit V V A mA mA mA mW Document Number 85566 Rev. 2.0, 20-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 MCL4148, MCL4448 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Mounted on epoxy-glass hard tissue, Fig. 5, 35 µm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Tj Tstg Value Unit Junction to ambient air 500 K/W Junction temperature Storage temperature range 175 - 65 to + 175 °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 5 m A IF = 50 mA IF = 100 mA V R = 20 V Reverse current VR = 20 V, Tj = 150 °C V R = 75 V Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time IR = 100 µA, tp/T = 0.01, tp = 0.3 ms VR = 0, f = 1 MHz, VHF = 50 mV VHF = 2 V, f = 100 MHz IF = IR =10 mA, iR = 1 mA IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω Part MCL4448 MCL4148 MCL4448 Symbol VF VF VF IR IR IR V(BR) CD ηr trr trr 45 8 4 100 4 Min. 620 860 930 Typ. Max. 720 1000 1000 25 50 5 Unit mV mV mV nA µA µA V pF % ns ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 MCL 4148 100 Scattering Limit 10 1000 MCL 4448 I F - Forward Current (mA) 100 Scattering Limit 10 I F - Forward Current (mA) 1 Tj = 25 °C 0.1 0 0.4 0.8 1.2 1.6 2.0 1 Tj = 25 ° C 0.1 0 0.4 0.8 1.2 1.6 2.0 16641 V F - Forward Voltage (V) 16643 V F - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85566 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 2.0, 20-Aug-10 MCL4148, MCL4448 Vishay Semiconductors 1000 IR- Reverse Current (nA) Tj = 25 °C 100 Scattering Limit 10 1 1 94 9098 10 VR- Reverse Voltage (V) 100 Figure 3. Reverse Current vs. Reverse Voltage 3.0 CD - Diode Capacitance (pF) 2.5 2.0 1.5 1.0 0.5 0 0.1 1 f = 1 MHz Tj = 25 °C 10 100 94 9099 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage 0.71 0.152 1.3 1.27 25 0.355 10 2.5 95 10329 24 Figure 5. Board for RthJA definition (in mm) Document Number 85566 Rev. 2.0, 20-Aug-10 9.9 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 MCL4148, MCL4448 Vishay Semiconductors Package Dimensions in millimeter (inches): MicroMELF Cathode indification 1 (0.039) surface plan 1.2 (0.047) 1.1 (0.043) * 2 (0.079) 1.8 (0.071) 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Reflow soldering 2.4 (0.094) 0.8 (0.031) 0.8 (0.031) 0.9 (0.035) Wave soldering 2.8 (0.110) 0.9 (0.035) 1.2 (0.047) 0.8 (0.031) 1 (0.039) Created - Date: 26.July.1996 Rev. 13 - Date: 07.June.2006 Document no.:6.560-5007.01-4 96 12072 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85566 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 2.0, 20-Aug-10 1.4 (0.055) 0.6 (0.024) surface plan 1. < gl 35 ( as 0.0 s 53 ) Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000