MSS1P3U

New Product MSS1P2U, MSS1P3U Vishay General Semiconductor Ultra Low VF Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series ® • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Low forward voltage drop, low power losses • Caution: High reverse leakage • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition Top View Bottom View MicroSMP The ultra low VF Schottky optimized for forward voltage drop with high reverse current trade-off. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 1.5 A TJ max. 1.0 A 20 V, 30 V 30 A 0.30 V 125 °C MECHANICAL DATA Case: MicroSMP Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per APPLICATIONS Application designed and qualified for hard disc driver where the VF performance and size are required. HTIR is not a concern. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range Storage temperature range VRRM IF(AV) IFSM TJ TSTG SYMBOL MSS1P2U 12U 20 1.0 30 - 55 to + 125 - 55 to + 150 MSS1P3U 13U 30 V A A °C °C UNIT Document Number: 89095 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product MSS1P2U, MSS1P3U Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A IF = 1.0 A Maximum instantaneous forward voltage IF = 1.5 A IF = 0.5 A IF = 1.0 A IF = 1.5 A Maximum reverse current Typical junction capacitance Rated VR 4.0 V, 1 MHz TJ = 25 °C TJ = 125 °C IR (2) CJ TJ = 85 °C TJ = 25 °C VF (1) SYMBOL TYP. 0.23 0.30 0.35 0.16 0.24 0.30 0.4 12 68 MAX. 0.40 0.35 1.2 30 μA mA pF V UNIT Notes • Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA (1) RJM (1) MSS1P3U 170 30 UNIT °C/W Note (1) Free air, mounted on recommended copper pad area. Thermal resistance R JA - junction to ambient, RJM - junction to mount. ORDERING INFORMATION (Example) PREFERRED P/N MSS1P3U-M3/89A UNIT WEIGHT (g) 0.006 PREFERRED PACKAGE CODE 89A BASE QUANTITY 4500 DELIVERY MODE 7" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 Resistive or Inductive Load 0.5 D = 0.3 D = 0.5 D = 0.8 Average Forward Current (A) 1.0 0.8 Average Power Loss (W) 0.4 D = 0.1 0.3 D = 0.2 0.6 D = 1.0 0.2 T 0.1 D = tp/T 0 tp 1.0 1.2 0.4 TM Measured at the Cathode Band Terminal 0.2 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89095 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product MSS1P2U, MSS1P3U Vishay General Semiconductor 10 1000 Instantaneous Forward Current (A) TA = 100 °C 1 TA = 25 °C 0.1 TA = 85 °C Junction Capacitance (pF) 0.8 1.0 100 0.01 0 0.2 0.4 0.6 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance TJ - Derated Operating Temperature (°C) 80 90 100 100 125 Instantaneous Reverse Current (mA) TA = 100 °C 10 TA = 85 °C 1 115 105 95 85 0.1 TA = 25 °C 75 0.01 10 20 30 40 50 60 70 65 3 6 9 12 15 18 21 24 27 30 Percent of Rated Peak Reverse Voltage (%) VR - DC Reverse Voltage (V) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Operating Temperature Derating PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP Cathode Band 0.059 (1.50) 0.043 (1.10) 0.030 (0.75) 0.022 (0.55) 0.055 (1.40) 0.047 (1.20) 0.039 (0.98) 0.031 (0.78) 0.030 (0.75) 0.022 (0.55) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) Mounting Pad Layout 0.079 (2.00) 0.032 (0.80) 0.029 (0.73) 0.025 (0.63) 0.011 (0.27) 0.005 (0.12) 0.043 (1.10) 0.032 (0.80) 0.020 (0.50) Document Number: 89095 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. 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