P4KE56A

P4KE6.8 thru P4KE540A Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-204AL, molded epoxy over passivated chip Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note: P4KE250 ~ P4KE540A and P4KE250C ~ P4KE440CA for commercial grade only DO-204AL (DO-41) PRIMARY CHARACTERISTICS VBR uni-directional VBR bi-directional PPPM PD IFSM (uni-directional only) TJ max. 6.8 V to 540 V 6.8 V to 440 V 400 W 1.5 W 40 A 175 °C DEVICES FOR BI-DIRECTION APPLICATIONS For bi-direction use C or CA suffix (e.g. P4KE440CA). Electrical characteristics apply in both directions. Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 µs waveform (1) (Fig. 1) Peak pulse current with a 10/1000 µs waveform (1) Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 25 A for uni-directional only Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) VF = 3.5 V for P4KE220(A) and below; VF = 5.0 V for P4KE250(A) and above Document Number: 88365 Revision: 22-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 (3) SYMBOL PPPM IPPM PD IFSM VF TJ, TSTG LIMIT 400 See next table 1.5 40 3.5/5.0 - 55 to + 175 UNIT W A W A V °C P4KE6.8 thru P4KE540A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR AT IT(1) (V) MIN. P4KE6.8 P4KE6.8A P4KE7.5 P4KE7.5A P4KE8.2 P4KE8.2A P4KE9.1 P4KE9.1A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE16 P4KE16A P4KE18 P4KE18A P4KE20 P4KE20A P4KE22 P4KE22A P4KE24 P4KE24A P4KE27 P4KE27A P4KE30 P4KE30A P4KE33 P4KE33A P4KE36 P4KE36A P4KE39 P4KE39A P4KE43 P4KE43A P4KE47 P4KE47A P4KE51 P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE68A P4KE75 P4KE75A www.vishay.com 2 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 TEST CURRENT IT (mA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 STANDOFF VOLTAGE VWM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 MAXIMUM REVERSE LEAKAGE AT VWM ID (3) (µA) 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 5.9 6.2 5.4 5.7 5.0 5.2 4.5 4.7 4.1 4.3 3.7 3.9 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108 103 MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/°C) 0.057 0.057 0.061 0.061 0.065 0.06 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 0.105 DEVICE TYPE For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88365 Revision: 22-Oct-08 P4KE6.8 thru P4KE540A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR AT IT(1) (V) MIN. P4KE82 P4KE82A P4KE91 P4KE91A P4KE100 P4KE100A P4KE110 P4KE110A P4KE120 P4KE120A P4KE130 P4KE130A P4KE150 P4KE150A P4KE160 P4KE160A P4KE170 P4KE170A P4KE180 P4KE180A P4KE200 P4KE200A P4KE220 P4KE220A P4KE250 P4KE250A P4KE300 P4KE300A P4KE350 P4KE350A P4KE400 P4KE400A P4KE440 P4KE440A P4KE480 P4KE480A P4KE510 P4KE510A P4KE540 P4KE540A 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 135 143 144 152 153 162 162 171 180 190 198 209 225 237 270 285 315 333 360 380 396 418 432 456 459 485 486 513 MAX. 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 484 462 528 504 561 535 594 567 TEST CURRENT IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 STANDOFF VOLTAGE VWM (V) 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 175 185 202 214 243 256 284 300 324 342 356 376 389 408 413 434 437 459 MAXIMUM REVERSE LEAKAGE AT VWM ID (3) (µA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 3.4 3.5 3.1 3.2 2.8 2.9 2.5 2.6 2.3 2.4 2.1 2.2 1.9 1.9 1.7 1.8 1.6 1.7 1.6 1.6 1.4 1.5 1.2 1.2 1.1 1.2 0.93 1.0 0.79 0.83 0.70 0.73 0.63 0.66 0.58 0.61 0.55 0.57 0.52 0.54 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 344 328 360 344 430 414 504 482 574 548 631 602 686 658 729 698 772 740 MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/°C) 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 DEVICE TYPE Notes: (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to lead Typical thermal resistance, junction to ambient, LLead = 10 mm Document Number: 88365 Revision: 22-Oct-08 SYMBOL RθJL RθJA LIMIT 66 100 UNIT °C/W °C/W www.vishay.com 3 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com P4KE6.8 thru P4KE540A Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N P4KE6.8A-E3/54 P4KE6.8AHE3/54 (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.350 0.350 PREFERRED PACKAGE CODE 54 54 BASE QUANTITY 5500 5500 DELIVERY MODE 13" diameter paper tape and reel 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current Decays to 50 % of IPPM IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 1 50 10/1000 µs Waveform as defined by R.E.A. td 0.1 0.1 1 10 100 1000 10 000 0 0 1.0 2.0 3.0 4.0 td - Pulse Width (µs) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 100 10 000 75 CJ - Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 Measured at Zero Bias 50 100 Measured at Stand-Off Voltage VWM 10 25 0 0 25 50 75 100 125 150 175 200 1 10 100 1000 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance Uni-Directional www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88365 Revision: 22-Oct-08 P4KE6.8 thru P4KE540A Vishay General Semiconductor 100 60 Hz Resistive or Inductive Load 75 100 Transient Thermal Impedance (°C/W) 200 PD - Power Dissipation (%) 50 L = 0.375" (9.5 mm) Lead Lengths 25 10 0 0 25 50 75 100 125 150 175 1 0.001 0.01 0.1 1 10 100 1000 TL - Lead Temperature (°C) tp - Pulse Duration (s) Figure 5. Power Derating Curve Figure 7. Typical Transient Thermal Impedance 100 Peak Forward Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave 10 1 10 100 Number of Cycles at 60 Hz Figure 6. Max. Non-Repetitive Forward Surge Current Uni-Directional Only PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Document Number: 88365 Revision: 22-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1