S1MA

Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 S1BA thru S1MA Vishay General Semiconductor Standard Surface Mount Glass Passivated Rectifier FEATURES • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Low forward voltage drop Low leakage current High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-214AC (SMA) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 1.0 A TJ max. 1.0 A 100 V to 1000 V 30 A 3.0 μA 0.861 V 150 °C For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer and telecommunication. Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Average forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM IF(AV) IFSM TJ, TSTG SYMBOL S1BA BA 100 S1DA DA 200 S1GA GA 400 1.0 30 - 55 to + 150 S1JA JA 600 S1KA KA 800 S1MA MA 1000 V A A °C UNIT ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Instantaneous forward voltage Reverse current Typical reverse recovery time Typical junction capacitance TEST CONDITIONS IF = 1.0 A Rated VR TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C SYMBOL VF (1) IR (2) trr CJ TYP. 0.960 0.861 0.09 20 1.0 8 MAX. 1.1 3 80 UNIT V μA μs pF IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Document Number: 88968 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 S1BA thru S1MA Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA (1) RJL (1) S1BA S1DA S1GA 95 S1JA S1KA S1MA UNIT °C/W 22 Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N S1JA-E3/61T S1JA-E3/5AT UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.50 35 Average Forward Rectified Current (A) Peak Forward Surge Current (A) 175 1.25 Lead Temperature 1.00 30 25 20 15 10 5 0 0.75 0.50 0.25 Ambient Temperature Resistive or Inductive Load P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0 25 50 75 100 125 150 0 1 10 100 Lead Temperature (°C) Number of Cycles at 50 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current 1.2 100 Instantaneous Forward Current (A) D = 0.8 1.0 D = 0.5 D = 0.3 D = 0.2 0.8 D = 0.1 0.6 T 0.4 D = 1.0 TJ = 150 °C TJ = 125 °C Average Power Loss (W) 10 TJ = 25 °C 1 0.2 D = tp/T tp 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88968 Revision: 14-Jan-11 Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 S1BA thru S1MA Vishay General Semiconductor 100 100 10 TJ = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (μA) TJ = 150 °C Junction to Ambient 1 10 0.1 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 1 0.01 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 5 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Transient Thermal Impedance 100 Junction Capacitance (pF) 10 1 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88968 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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