S2M

S2A thru S2M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AA (SMB) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end DO-214AA (SMB) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. 1.5 A 50 V to 1000 V 50 A 1.0 µA 1.15 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL= 100 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating and storage temperature range VRRM VRMS VDC IF(AV) IFSM TJ, TSTG SYMBOL S2A SA 50 35 50 S2B SB 100 70 100 S2D SD 200 140 200 S2G SG 400 280 400 1.5 50 - 55 to + 150 S2J SJ 600 420 600 S2K SK 800 560 800 S2M SM 1000 700 1000 V V V A A °C UNIT Document Number: 88712 Revision: 08-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 S2A thru S2M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance TEST CONDITIONS 1.5 A TA= 25 °C TA= 125 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz SYMBOL VF IR trr CJ S2A S2B S2D S2G 1.15 1.0 125 2.0 16 S2J S2K S2M UNIT V µA µs pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas SYMBOL RθJA RθJL S2A S2B S2D S2G 53 16 S2J S2K S2M UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N S2J-E3/52T S2J-E3/5BT S2JHE3/52T (1) S2JHE3/5BT (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.096 0.096 0.096 0.096 REFERRED PACKAGE CODE 52T 5BT 52T 5BT BASE QUANTITY 750 3200 750 3200 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.75 Resistive or Inductive Load 50 TL = 100 °C 8.3 ms Single Half Sine-Wave 40 Average Forward Current (A) 1.50 1.25 1.00 0.75 0.50 0.25 0 50 70 90 110 130 150 60 Hz Resistive or Inductive Load P.C.B. Mounted 0.27 x 0.27" (7.0 x 7.0 mm) Copper Pad Areas Peak Forward Surge Current (A) 30 20 10 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88712 Revision: 08-Apr-08 S2A thru S2M Vishay General Semiconductor 10 100 TJ = 150 °C Instantaneous Forward Current (A) 1 TJ = 125 °C Junction Capacitance (pF) 1.3 10 TJ = 25 °C 0.1 0.01 0.3 0.5 0.7 0.9 1.1 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 1000 TJ = 150 °C 100 100 10 TJ = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 88712 Revision: 08-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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