SB3H90_08

New Product SB3H90 & SB3H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in middle voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. 3.0 A 90 V, 100 V 100 A 0.65 V 20 µA 175 °C DO-201AD PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. MECHANICAL DATA Case: DO-201AD Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum working reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 90 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz Critical rate of rise of reverse voltage Storage temperature range Maximum operating junction temperature SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM dV/dt TSTG TJ SB3H90 90 90 90 3.0 100 1.0 10 000 - 55 to + 175 175 SB3H100 100 100 100 UNIT V V V A A A V/µs °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum reverse current at rated VR (2) Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Document Number: 88720 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 TEST CONDITIONS IF = 3.0 A IF = 3.0 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C SYMBOL VF IR SB3H90 0.80 0.65 20 4.0 SB3H100 UNIT V µA mA New Product SB3H90 & SB3H100 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance (1) Note: (1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas SYMBOL RθJA RθJL SB3H90 50 20 SB3H100 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N SB3H100-E3/54 SB3H100-E3/73 SB3H100HE3/54 (1) SB3H100HE3/73 (1) UNIT WEIGHT (g) 1.09 1.09 1.09 1.09 PREFERRED PACKAGE CODE 54 73 54 73 BASE QUANTITY 1400 1000 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging 13" diameter paper tape and reel Ammo pack packaging Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 100 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 3.0 Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 Average Forward Current (A) 2.0 1.0 0.1 0 0 25 50 75 100 125 150 175 Lead Temperature (°C) Instantaneous Forward Voltage (V) Figure 1. Forward Current Derating Curve Figure 3. Typical Instantaneous Forward Characteristics 100 1000 Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave 80 100 TJ = 150 °C TJ = 125 °C 60 10 TJ = 100 °C 1 40 20 0.1 TJ = 25 °C 10 1 10 100 0.01 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 Figure 4. Typical Reverse Characteristics Document Number: 88720 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com New Product SB3H90 & SB3H100 Vishay General Semiconductor 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 100 1 10 0.1 1 10 100 0.1 0 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Figure 5. Typical Junction Capacitance Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88720 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1