SD203NR

SD203N/R Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 200 A FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery DO-205AB (DO-9) RoHS COMPLIANT • Compression bonded encapsulation • Stud version JEDEC DO-205AB (DO-9) • Maximum junction temperature 125 °C • RoHS compliant • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 200 A • Designed and qualified for industrial level TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) 50 Hz IFSM 60 Hz 50 Hz 60 Hz VRRM trr TJ Range Range TJ TEST CONDITIONS VALUES 200 TC 85 314 4990 5230 125 114 400 to 2500 1.0 to 2.0 25 °C - 40 to 125 V µs kA2s A UNITS A °C I2 t Document Number: 93170 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD203N/R Series Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 SD203N/R..S10 08 10 12 SD203N/R..S15 14 16 SD203N/R..S20 20 25 VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 1200 1400 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 1300 1500 1700 2100 2600 35 IRRM MAXIMUM TJ = 125 °C mA Fast Recovery Diodes (Stud Version), 200 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 76 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 200 85 314 4990 5230 4200 Sinusoidal half wave, initial TJ = TJ maximum 4400 125 114 88 81 1250 1.00 1.47 1.10 mΩ 0.46 1.65 V kA2√s V kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 628 A, TJ = 25 °C, tp = 400 µs square pulse Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93170 Revision: 08-Apr-08 SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 1.0 1.5 2.0 750 25 - 30 TEST CONDITIONS Ipk SQUARE PULSE (A) TYPICAL VALUES AT TJ = 125 °C Vr (V) trr AT 25 % IRRM (µs) 2.4 2.9 3.2 Qrr (µC) 52 90 107 Irr (A) 33 44 46 IFM Vishay High Power Products dI/dt (A/µs) trr t Qrr IRM(REC) S10 S15 S20 dir dt THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque ± 10 % Approximate weight Case style See dimensions (link at the end of datasheet) SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not-lubricated threads Lubricated threads TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.115 K/W 0.08 31 24.5 250 Nm g UNITS °C DO-205AB (DO-9) ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.010 0.013 0.017 0.025 0.044 RECTANGULAR CONDUCTION 0.008 0.014 0.019 0.027 0.044 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93170 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD203N/R Series Vishay High Power Products Maximum Allowable Case T emperature (°C) 130 120 110 Conduction Angle Fast Recovery Diodes (Stud Version), 200 A Maximum Average F orward Power Los (W) s 550 500 450 400 350 300 250 200 RMS Limit 150 100 50 0 0 50 100 150 200 250 300 350 Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Conduction Period S D203N/ RS eries RthJC (DC) = 0.115 K/ W DC 180° 120° 90° 60° 30° 100 90 80 70 0 40 80 120 160 200 240 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 30° 60° 90° 120° 180° S D203N/ R S eries TJ = 125°C Maximum Allowable Case T emperature (°C) ine Peak Half S Wave Forward Current (A) 130 120 110 Conduction Period S D203N/ R S eries RthJC (DC) = 0.115 K/ W 5000 4500 4000 3500 3000 2500 2000 1500 1000 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125°C J @60 Hz 0.0083 s @50 Hz 0.0100 s 100 90 80 70 0 50 100 150 200 250 300 350 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 30° 60° 90° 120° 180° S D203N/ R S eries DC 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average Forward Power Loss (W) Peak Half S Wave Forward Current (A) ine 350 300 250 200 150 100 50 0 0 50 100 150 200 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Conduction Angle 5500 5000 4500 4000 3500 3000 2500 2000 1500 180° 120° 90° 60° 30° RMS Limit Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Initial T = 125 °C J No Voltage Reapplied Rated VRRM Reapplied S D203N/ R S eries TJ = 125°C S D203N/ R S eries 0.1 Pulse T rain Duration (s) 1 1000 0.01 Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 93170 Revision: 08-Apr-08 www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A (K/ W) Vishay High Power Products 1 S teady S tate Value: R thJC = 0.115 K/ W (DC Operation) 0.1 10000 Instantaneous Forward Current (A) T = 25 °C J TJ= 125 °C 1000 T ransient T hermal Impedance Z thJC 0.01 S D203N/ R S eries S D203N/ R S eries 100 .5 2.5 4.5 6.5 Instantaneous Forward Voltage (V) 0.001 0.001 0.01 0.1 1 10 Fig. 7 - Forward Voltage Drop Characteristics S quare Wave Puls Duration (s) e Fig. 8 - Thermal Impedance ZthJC Characteristic 120 V 100 Forwa rd R ecovery (V) 80 60 FP I TJ = 125°C TJ = 25°C 40 20 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 R ate Off F Of Forward Current di/ dt (A/ usec) all Fig. 9 - Typical Forward Recovery Characteristics S D203N/ R 20 S ..S eries Maximum Reverse Recovery T ime - T (µs) rr 2.8 2.6 2.4 2.2 2 1.8 200 A 400 A Maximum Reverse R ecovery Charge - Qrr (µC) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 S D203N/ R..S S 10 eries T = 125 °C, V r = 30V J 200 A 400 A I FM = 750 A S quare Pulse S D203N/ R 10 S ..S eries T = 125 °C, V r = 30V J I FM = 750 A S quare Pulse 1.6 10 100 Rate Of Fall Of Forward Current - di/ dt (A/µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 10 - Recovery Time Characteristics Fig. 11 - Recovery Charge Characteristics Document Number: 93170 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD203N/R Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 200 A Maximum R everse R overy Current - Irr (A) ec Maximum R everse Rec overy Current - Irr (A) 100 I FM = 750 A 130 120 110 100 90 80 70 60 50 40 30 20 I FM = 750 A S quare Pulse 90 80 70 60 50 40 30 S quare Pulse 400 A 200 A 400 A 200 A S D203N/ R..S S 10 eries T = 125 °C, V r = 30V J S D203N/ R..S S 15 eries TJ= 125 °C, V r = 30V 20 20 30 40 50 60 70 80 90 100 10 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 12 - Recovery Current Characteristics 3.6 S D203N/ R 15 S ..S eries T = 125 °C, V r = 30V J 3.2 I FM = 750 A Fig. 15 - Recovery Current Characteristics 3.6 3.4 3.2 3 2.8 2.6 2.4 10 S D203N/ R..S S 20 eries T = 125 °C, V r = 30V J I FM = 750 A S quare Pulse 2.8 S uare Pulse q Maximum Revers Recovery T e ime - T (µs rr ) Maximum Revers Recovery T e ime - T (µs rr ) 400 A 200 A 2.4 400 A 2 200 A 1.6 10 100 100 Rate Of Fa ll Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/d t (A/ µs) Fig. 13 - Recovery Time Characteristics Fig. 16 - Recovery Time Characteristics Maximum Reverse Recovery Charge - Qrr (µC) Maximum R evers Recovery Charge - Qrr (µC) e 170 160 150 140 130 120 110 100 90 80 70 60 S D203N/ R..S S 15 eries T = 125 °C, V r = 30V J 200 A 400 A I FM = 750 A S qua re Pulse 300 I F = 750 A M S ua re Pulse q 250 200 400 A 150 200 A 100 S D203N/ R..S S 20 eries T = 125 °C, V r = 30V J 50 10 20 30 40 50 60 70 80 90 100 50 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 14 - Recovery Charge Characteristics www.vishay.com 6 Fig. 17 - Recovery Charge Characteristics Document Number: 93170 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A Vishay High Power Products Maximum Reverse R ecovery Current - Irr (A) 130 120 110 100 90 80 70 60 50 40 30 S D203N/ R..S S 20 eries TJ= 125 °C, V r = 30V 200 A I FM = 750 A S quare Pulse 400 A 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 18 - Recovery Current Characteristics 1E 4 20 joules per pulse 10 4 20 joules per pulse 10 4 2 1 0.4 0.2 0.1 0.06 S D203N/ R..S S 10 eries T rapezoidal Pulse TJ = 125°C, VRRM = 1120V d v/ dt=1000V/ µs, di/ dt=50A/ µs Peak Forward Current (A) 1 2 1E 3 0.4 0.2 0.1 0.04 0.02 1E 2 0.01 S D203N/ R..S S 10 eries S inusoidal Pulse TJ= 125°C, VRRM= 1120V dv/ dt = 1000V/ µs tp 1E 1 1E 1 1E 2 1E 3 1E 4 1E1 1E2 1E3 1E4 Puls Basewidth (µs) e Puls Bas e ewidth (µs ) Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E 4 20 joules per p ulse 10 4 2 1 2 1 0.4 0.2 10 4 20 joules per pulse Peak F orward Current (A) 1E 3 0.4 0.2 0.1 0.04 0.02 0.01 S D203N/ R..S S 15 eries S inusoidal Pulse TJ = 125°C, VRRM = 1120V dv/ dt = 1000V/ µs 1E 2 0.1 S D203N/ R..S S 15 eries T rapezoidal Pulse TJ= 125°C, VRRM = 1120V d v/ dt=1000V/ µs, di/ dt=50A/ µs tp tp 1E 1 1E1 1E2 1E3 1E4 1E1 1E 2 1E 3 1E 4 Pulse Basewidth (µs) Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics Pulse Basewidth (µs) Document Number: 93170 Revision: 08-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD203N/R Series Vishay High Power Products 1E4 20 joules per pulse 10 4 2 2 1 0.4 20 joules per p ulse 10 4 Fast Recovery Diodes (Stud Version), 200 A Peak F orward Current (A) 1E3 1 0.4 0.2 0.1 1E2 0.04 S D203N/ R..S S 20 eries S inusoidal Pulse TJ= 125°C, VRRM = 1760V dv/ dt = 1000V/ µs 0.2 S D203N/ R..S S 20 eries T rapezoidal Pulse TJ= 125°C, VRRM = 1760V d v/ dt=1000V/ µs, di/ dt=50A/ µs 0.02 0.01 tp tp 1E1 1E1 1E2 1E 3 1E4 1E1 1E2 1E3 1E 4 Pulse Basewidth (µs) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics Pulse Basewidth (µs) ORDERING INFORMATION TABLE Device code SD 1 20 2 3 3 R 4 25 5 S20 6 P 7 B 8 C 9 1 2 3 4 - Diode Essential part number 3 = Fast recovery N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 5 6 7 8 - Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A M = Stud base DO-205AB (DO-9) M16 x 1.5 -7 B = Flag top terminals (for cathode/ anode leads) S = Isolated lead with silicon sleeve (red = Reverse polarity; blue = Normal polarity) None = Not isolated lead 9 - C = Ceramic housing (over 1600 V) V = Glass-metal seal (only up to 1600 V) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95301 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93170 Revision: 08-Apr-08 Outline Dimensions Vishay Semiconductors DO-205AB (DO-9) DIMENSIONS in millimeters (inches) Ceramic housing 19 (0.75) MAX. 4 (0.16) MAX. 9.5 (0.37) MIN. 39 (1.53) MAX. DIA. 8.5 (0.33) NOM. C.S. 35 mm2 (0.054 s.i.) 210 (8.27) ± 10 (0.39) DIA. 27.5 (1.08) MAX. 82 (3.23) MIN. SW 32 16 (0.63) MAX. 21 (0.82) MAX. 3/4"-16UNF-2A* *For metric device: M16 x 1.5 contact factory Document Number: 95301 Revision: 09-Apr-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000