SD803C08S10C

SD803C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 845 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time • High voltage ratings up to 1600 V • High current capability B-43 RoHS COMPLIANT • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC B-43 • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 845 A • Designed and qualified for industrial level TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) TEST CONDITIONS VALUES 845 Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz Range 55 1326 25 11 295 11 830 640 583 400 to 1600 1.0 to 1.5 TJ 25 - 40 to 125 UNITS A °C A °C A IFSM I2 t VRRM trr TJ kA2s V µs °C Document Number: 93180 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD803C..C Series Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 SD803C..S10C 08 10 12 SD803C..S15C 14 16 VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 1300 1500 1700 45 IRRM MAXIMUM AT TJ = 125 °C mA Fast Recovery Diodes (Hockey PUK Version), 845 A FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level of threshold voltage High level of threshold voltage Low level of forward slope resistance High level of forward slope resistance Maximum forward voltage drop I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 845 (420) 55 (75) 1326 11 295 11 830 9500 Sinusoidal half wave, initial TJ = TJ maximum 9945 640 583 451 412 6400 1.02 1.32 0.38 0.28 1.89 kA2√s V mΩ V kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 2655 A, TJ = 25 °C; tp = 10 ms sinusoidal wave RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 1.0 1.5 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 125 °C IFM dI/dt (A/µs) Vr (V) trr AT 25 % IRRM (µs) 2.0 3.2 Qrr (µC) 45 87 Irr (A) 34 51 trr t Qrr IRM(REC) dir dt S10 S15 25 - 30 www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93180 Revision: 04-Aug-08 SD803C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 °C - 40 to 150 0.076 K/W 0.038 9800 (1000) 83 B-43 N (kg) g UNITS ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180° 120° 90° 60° 30° 0.006 0.008 0.010 0.015 0.026 DOUBLE SIDE 0.007 0.008 0.010 0.015 0.026 SINGLE SIDE 0.005 0.008 0.011 0.016 0.026 DOUBLE SIDE 0.005 0.008 0.011 0.016 0.026 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93180 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD803C..C Series Vishay High Power Products Maximum Allowable Heatsink T emperature (°C) Fast Recovery Diodes (Hockey PUK Version), 845 A Maximum Allowable Heatsink Temperature (°C) 130 120 110 100 90 80 70 60 90° 50 40 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) 30° 60° 120° 180° DC Conduction Period 130 120 110 100 90 80 70 0 S D803C..C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W S D803C..C S eries (Double S Cooled) ide R thJ-hs (DC) = 0.038 K/ W Conduction Angle 30° 60° 90° 180° 120° 50 100 150 200 250 300 350 400 450 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink T emperature (°C) 120 110 100 S D803C..C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W Maximum Average Forward Power Loss (W) 130 1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) Conduction Angle 180° 120° 90° 60° 30° RMSLimit Conduction Period 90 80 70 60 50 0 100 200 300 400 500 600 700 Average Forward Current (A) 30° 60° 90° 120° 180° DC S D803C..C S eries T = 125°C J Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Maximum Allowable Heatsink T emperature (°C) 130 120 110 100 S D803C..C S eries (Double S Cooled) ide R thJ-hs (DC) = 0.038 K/ W Maximum Average Forward Power Loss (W) 2200 2000 1800 1600 1400 1200 1000 RMS Limit 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) Conduction Period DC 180° 120° 90° 60° 30° Conduc tion Angle 90 80 70 60 50 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) 30° 60° 90° 120° 180° S D803C..C S eries TJ = 125°C Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93180 Revision: 04-Aug-08 SD803C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A Peak Half S Wave Forward Current (A) ine T ransient T hermal Impedance Z thJ-hs (K/ W) 10000 9000 8000 7000 6000 5000 4000 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125°C J @60 Hz 0.0083 s @50 Hz 0.0100 s 0.1 S D803C..C S eries 0.01 S teady S tate Value R thJ-hs = 0.076 K/ W (S ingle S ide Cooled) R thJ-hs = 0.038 K/ W (Double S Cooled) ide (DC Operation) S D803C..C S eries 10 100 0.001 0.001 0.01 0.1 1 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) S quare Wave Puls Duration (s) e Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. 11000 Initial T = 125°C J 10000 No Voltage Reapplied Rated VRRMReapplied 9000 8000 7000 6000 5000 4000 3000 0.01 S D803C..C S eries 0.1 Pulse T rain Duration (s) 1 Maximum Revers Recovery T e ime - T (µs rr ) Peak Half S Wave Forward Current (A) ine 12000 2.2 2.1 2 1.9 S D803C..S 10C S eries T = 125 °C; V r = 30V J I FM = 1000 A S quare Pulse 500 A 1.8 1.7 1.6 10 250 A 100 Rate Of Fall Of Forward Current - di/dt (A/ µs) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 11 - Recovery Time Characteristics Maximum Revers Rec overy Charge - Qrr (µC) e 10000 Instantaneous Forward Current (A) 130 120 110 100 90 80 70 60 50 40 30 S D803C..S 10C S eries T = 125 °C; Vr = 30V J 250 A 500 A I FM = 1000 A S quare Pulse 1000 T = 25°C J 100 T = 125°C J S D803C..C S eries 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 9 - Forward Voltage Drop Characteristics Fig. 12 - Recovery Charge Characteristics Document Number: 93180 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD803C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 845 A Maximum Reverse Recovery Charge - Qrr (µC) 200 180 160 140 500 A I FM = 1000 A S ua re Pulse q Maximum R everse Recovery Current - Irr (A) 120 110 100 90 80 70 60 50 40 30 20 S D803C..S 10C S eries T = 125 °C; V r = 30V J I FM = 1000 A S quare Pulse 500 A 250 A 120 100 80 60 S D803C..S 15C S eries T = 125 °C; V r = 30V J 250 A 10 10 20 30 40 50 60 70 80 90 100 40 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 13 - Recovery Current Characteristics Fig. 15 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) Maximum R everse Recovery T ime - T (µs) rr 4 S D803C..S 15C S eries T = 125 °C; V r = 30V J 3.5 I FM = 1000 A S quare Pulse 140 130 120 110 100 90 80 70 60 50 40 30 S D803C..S 15C S eries TJ= 125 °C; V r = 30V 250 A 500 A I FM = 1000 A S quare Pulse 3 500 A 2.5 250 A 2 10 100 20 10 20 30 40 50 60 70 80 90 100 R ate Of Fall Of Forward Current - di/d t (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 14 - Recovery Time Characteristics Fig. 16 - Recovery Current Characteristics 1E4 10 4 2 20 joules p er pulse 2 1 0.4 0.2 0.1 0.04 4 10 20 joules per pulse Peak Forward Current (A) 1 0.4 1E3 0.04 0.02 0.2 0.1 1E2 0.01 S D803C..S 10C S eries T rapezoidal Pulse TJ= 125°C, VRRM = 800V d v/ dt = 1000V/ µs; di/ dt=50A/ µs tp S D803C..S 10C S eries S inusoidal Pulse TJ = 125°C, VRRM = 800V d v/ d t = 1000V/ µs tp 1E1 1E1 1E2 1E3 1E 4 1E1 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93180 Revision: 04-Aug-08 SD803C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A 1E4 10 4 2 20 joules per pulse 20 joules p er pulse 10 4 2 1 0.4 0.2 0.1 Peak Forward Current (A) 1 0.4 1E3 0.1 0.04 0.02 0.2 1E2 0.01 S D803C..S 15C S eries S inusoidal Pulse TJ = 125°C, VRRM = 800V d v/ d t = 1000V/ µs tp tp S D803C..S 15C S eries T rapezoidal Pulse TJ = 125°C, VRRM = 800V d v/ dt = 1000V/ µs; di/ dt=50A/ µs 1E1 1E1 1E2 1E3 1E4 1E 1 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics ORDERING INFORMATION TABLE Device code SD 1 1 2 3 4 5 6 7 80 2 Diode 3 3 C 4 16 5 S15 6 C 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) C = PUK case B-43 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95249 Document Number: 93180 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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