SD803C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 845 A
FEATURES
• High power FAST recovery diode series • 1.0 to 1.5 µs recovery time • High voltage ratings up to 1600 V • High current capability
B-43
RoHS
COMPLIANT
• Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC B-43 • Maximum junction temperature 125 °C • Lead (Pb)-free
PRODUCT SUMMARY
IF(AV) 845 A
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IF(AV) IF(RMS) TEST CONDITIONS VALUES 845 Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz Range 55 1326 25 11 295 11 830 640 583 400 to 1600 1.0 to 1.5 TJ 25 - 40 to 125 UNITS A °C A °C A
IFSM I2 t VRRM trr TJ
kA2s V µs °C
Document Number: 93180 Revision: 04-Aug-08
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SD803C..C Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 SD803C..S10C 08 10 12 SD803C..S15C 14 16 VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 1300 1500 1700 45 IRRM MAXIMUM AT TJ = 125 °C mA
Fast Recovery Diodes (Hockey PUK Version), 845 A
FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level of threshold voltage High level of threshold voltage Low level of forward slope resistance High level of forward slope resistance Maximum forward voltage drop I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 845 (420) 55 (75) 1326 11 295 11 830 9500 Sinusoidal half wave, initial TJ = TJ maximum 9945 640 583 451 412 6400 1.02 1.32 0.38 0.28 1.89 kA2√s V mΩ V kA2s A UNITS A °C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 2655 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 1.0 1.5 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 125 °C
IFM
dI/dt (A/µs)
Vr (V)
trr AT 25 % IRRM (µs) 2.0 3.2
Qrr (µC) 45 87
Irr (A) 34 51
trr t Qrr IRM(REC)
dir dt
S10 S15
25
- 30
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Document Number: 93180 Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 °C - 40 to 150 0.076 K/W 0.038 9800 (1000) 83 B-43 N (kg) g UNITS
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180° 120° 90° 60° 30° 0.006 0.008 0.010 0.015 0.026 DOUBLE SIDE 0.007 0.008 0.010 0.015 0.026 SINGLE SIDE 0.005 0.008 0.011 0.016 0.026 DOUBLE SIDE 0.005 0.008 0.011 0.016 0.026 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93180 Revision: 04-Aug-08
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SD803C..C Series
Vishay High Power Products
Maximum Allowable Heatsink T emperature (°C)
Fast Recovery Diodes (Hockey PUK Version), 845 A
Maximum Allowable Heatsink Temperature (°C) 130 120 110 100 90 80 70 60 90° 50 40 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) 30° 60° 120° 180° DC
Conduction Period
130 120 110 100 90 80 70 0
S D803C..C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W
S D803C..C S eries (Double S Cooled) ide R thJ-hs (DC) = 0.038 K/ W
Conduction Angle
30° 60° 90° 180° 120° 50 100 150 200 250 300 350 400 450 Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink T emperature (°C)
120 110 100
S D803C..C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W
Maximum Average Forward Power Loss (W)
130
1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A)
Conduction Angle
180° 120° 90° 60° 30°
RMSLimit
Conduction Period
90 80 70 60 50 0 100 200 300 400 500 600 700 Average Forward Current (A) 30° 60° 90° 120° 180° DC
S D803C..C S eries T = 125°C J
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T emperature (°C)
130 120 110 100
S D803C..C S eries (Double S Cooled) ide R thJ-hs (DC) = 0.038 K/ W
Maximum Average Forward Power Loss (W)
2200 2000 1800 1600 1400 1200 1000 RMS Limit 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A)
Conduction Period
DC 180° 120° 90° 60° 30°
Conduc tion Angle
90 80 70 60 50 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) 30°
60° 90° 120° 180°
S D803C..C S eries TJ = 125°C
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
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Document Number: 93180 Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A
Peak Half S Wave Forward Current (A) ine
T ransient T hermal Impedance Z thJ-hs (K/ W)
10000 9000 8000 7000 6000 5000 4000 1
At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125°C J @60 Hz 0.0083 s @50 Hz 0.0100 s
0.1 S D803C..C S eries
0.01
S teady S tate Value R thJ-hs = 0.076 K/ W (S ingle S ide Cooled) R thJ-hs = 0.038 K/ W (Double S Cooled) ide (DC Operation)
S D803C..C S eries
10
100
0.001 0.001
0.01
0.1
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
S quare Wave Puls Duration (s) e
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. 11000 Initial T = 125°C J 10000 No Voltage Reapplied Rated VRRMReapplied 9000 8000 7000 6000 5000 4000 3000 0.01 S D803C..C S eries 0.1 Pulse T rain Duration (s) 1
Maximum Revers Recovery T e ime - T (µs rr )
Peak Half S Wave Forward Current (A) ine
12000
2.2 2.1 2 1.9
S D803C..S 10C S eries T = 125 °C; V r = 30V J
I FM = 1000 A S quare Pulse
500 A
1.8 1.7 1.6 10
250 A
100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 11 - Recovery Time Characteristics
Maximum Revers Rec overy Charge - Qrr (µC) e
10000 Instantaneous Forward Current (A)
130 120 110 100 90 80 70 60 50 40 30 S D803C..S 10C S eries T = 125 °C; Vr = 30V J
250 A 500 A I FM = 1000 A S quare Pulse
1000
T = 25°C J 100 T = 125°C J
S D803C..C S eries 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V)
20 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 12 - Recovery Charge Characteristics
Document Number: 93180 Revision: 04-Aug-08
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SD803C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 845 A
Maximum Reverse Recovery Charge - Qrr (µC) 200 180 160 140
500 A I FM = 1000 A S ua re Pulse q
Maximum R everse Recovery Current - Irr (A)
120 110 100 90 80 70 60 50 40 30 20 S D803C..S 10C S eries T = 125 °C; V r = 30V J
I FM = 1000 A S quare Pulse 500 A 250 A
120 100 80 60 S D803C..S 15C S eries T = 125 °C; V r = 30V J
250 A
10 10 20 30 40 50 60 70 80 90 100
40 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 13 - Recovery Current Characteristics
Fig. 15 - Recovery Charge Characteristics
Maximum Reverse Recovery Current - Irr (A)
Maximum R everse Recovery T ime - T (µs) rr
4 S D803C..S 15C S eries T = 125 °C; V r = 30V J 3.5
I FM = 1000 A S quare Pulse
140 130 120 110 100 90 80 70 60 50 40 30 S D803C..S 15C S eries TJ= 125 °C; V r = 30V
250 A 500 A I FM = 1000 A S quare Pulse
3
500 A
2.5
250 A
2 10
100
20 10 20 30 40 50 60 70 80 90 100
R ate Of Fall Of Forward Current - di/d t (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 14 - Recovery Time Characteristics
Fig. 16 - Recovery Current Characteristics
1E4
10 4 2
20 joules p er pulse
2 1 0.4 0.2 0.1 0.04 4 10
20 joules per pulse
Peak Forward Current (A)
1 0.4
1E3
0.04 0.02
0.2 0.1
1E2
0.01
S D803C..S 10C S eries T rapezoidal Pulse TJ= 125°C, VRRM = 800V d v/ dt = 1000V/ µs; di/ dt=50A/ µs
tp
S D803C..S 10C S eries S inusoidal Pulse TJ = 125°C, VRRM = 800V d v/ d t = 1000V/ µs
tp
1E1 1E1
1E2
1E3
1E 4
1E1
1E2
1E3
1E 4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
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Document Number: 93180 Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A
1E4
10 4 2
20 joules per pulse
20 joules p er pulse 10 4 2 1 0.4 0.2 0.1
Peak Forward Current (A)
1 0.4
1E3
0.1 0.04 0.02
0.2
1E2
0.01
S D803C..S 15C S eries S inusoidal Pulse TJ = 125°C, VRRM = 800V d v/ d t = 1000V/ µs
tp
tp
S D803C..S 15C S eries T rapezoidal Pulse TJ = 125°C, VRRM = 800V d v/ dt = 1000V/ µs; di/ dt=50A/ µs
1E1 1E1
1E2
1E3
1E4
1E 1
1E2
1E3
1E 4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
SD
1
1 2 3 4 5 6 7
80
2 Diode
3
3
C
4
16
5
S15
6
C
7
Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) C = PUK case B-43
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95249
Document Number: 93180 Revision: 04-Aug-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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