SI1021R_08

Si1021R Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS(min.) (V) - 60 RDS(on) (Ω) 4.0 at VGS = - 10 V VGS(th) (V) - 1 to 3.0 ID (mA) - 190 FEATURES • • • • • • • • • Halogen-free Option Available TrenchFET® Power MOSFETs High-Side Switching Low On-Resistance: 4 Ω Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 20 pF (typ.) Miniature Package ESD Protected: 2000 V RoHS COMPLIANT SC-75A (SOT-416) G 1 APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays 3 D S 2 Marking Code: F BENEFITS Top View Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free) Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) • • • • • • Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer Small Board Area ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit - 60 ± 20 - 190 - 135 - 650 250 130 500 - 55 to 150 Unit V mA mW °C/W °C Document Number: 71410 S-81543-Rev. D, 07-Jul-08 www.vishay.com 1 Si1021R Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS VGS(th) VGS = 0 V, ID = - 10 µA VDS = VGS, ID = - 0.25 mA VDS = 0 V, VGS = ± 20 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V VDS = 0 V, VGS = ± 10 V, TJ = 85 °C VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = - 50 V, VGS = 0 V VDS = - 50 V, VGS = 0 V, TJ = 85 °C VDS = -10 V, VGS = - 4.5 V VDS = -10 V, VGS = - 10 V VGS = - 4.5 V, ID = - 25 mA VGS = - 10 V, ID = - 500 mA VGS = - 10 V, ID = - 500 mA, TJ = 125 °C Forward Transconductance Diode Forward Voltagea Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb Turn-On Time Turn-Off Time gfs VSD Qg Qgs Qgd Ciss Coss Crss tON tOFF VDD = - 25 V, RL = 150 Ω, ID ≅ - 200 mA, VGEN = - 10 V, RG = 10 Ω VDS = - 25 V, VGS = 0 V, f = 1 MHz VDS = - 30 V, VGS = - 15 V, ID ≅ - 500 mA VDS = - 10 V, ID = - 100 mA VDS = - 200 mA, VGS = 0 V 80 80 1.7 0.26 0.46 23 10 5 20 35 pF nC - 50 - 600 8 4 6 mS V Ω - 60 -1 - 3.0 ± 10 ± 200 ± 500 ± 100 - 25 - 250 mA nA V µA Symbol Test Conditions Min. Typ. Max. Unit Drain-Source On-State Resistance a RDS(on) ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71410 S-81543-Rev. D, 07-Jul-08 Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS 1.0 VGS = 10 V 7V 0.8 I D - Drain Current (A) 8V I D - Drain Current (mA) 900 25 °C 125 °C 600 TA = 25 °C, unless otherwise noted 1200 TJ = - 55 °C 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 300 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 20 40 Transfer Characteristics VGS = 0 V RDS(on) - On-Resistance (Ω) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 0 0 5 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 15 ID = 500 mA 12 RDS(on) - On-Resistance VDS = 30 V VDS = 48 V 9 1.8 Capacitance VGS - Gate-to-Source Voltage (V) 1.5 VGS = 10 V at 500 mA 1.2 (Normalized) VGS = 4.5 V at 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71410 S-81543-Rev. D, 07-Jul-08 www.vishay.com 3 Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 VGS = 0 V RDS(on) - On-Resistance (Ω) 8 ID = 500 mA I S - Source Current (A) 10 100 TJ = 125 °C 6 4 ID = 200 mA 2 10 TJ = 25 °C TJ = - 55 °C 1 0.00 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 0.4 0.3 VGS(th) Variance (V) 2 Power (W) 0.2 0.1 - 0.0 1 - 0.1 - 0.2 - 0.3 - 50 0.5 3 ID = 250 µA 2.5 On-Resistance vs. Gate-Source Voltage 1.5 TA = 25 °C 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 600 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W t2 1. Duty Cycle, D = Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71410. www.vishay.com 4 Document Number: 71410 S-81543-Rev. D, 07-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1