SI1022R_10

Si1022R Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS(min.) (V) 60 RDS(on) () 1.25 at VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 330 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Low On-Resistance: 1.25  • Low Threshold: 2.5 V • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • Miniature Package • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC SC-75A (SOT-416) G 1 3 APPLICATIONS D S 2 Marking Code: E • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid State Relays Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free) BENEFITS • • • • • Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currenta Power Dissipationa Thermal Resistance, Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes: a. Surface mounted on FR4 board, power applied for t  10 s. TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 ± 20 330 240 650 250 130 500 - 55 to 150 mW °C/W °C mA Unit V Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 www.vishay.com 1 Si1022R Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage VDS VGS(th) IGSS VGS = 0 V, ID = 10 µA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = ± 10 V TJ = 85 °C VDS = 0 V, VGS = ± 5 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS TJ = 85 °C VDS = 60 V, VGS = 0 V On-State Drain Currenta ID(on) VDS = 10 V, VGS = 4.5 V VDS = 7.5 V, VGS = 10 V VGS = 4.5 V, ID = 200 mA Drain-Source On-State Resistancea RDS(on) TJ = 125 °C VGS = 10 V, ID = 500 mA TJ = 125 °C Forward Transconductance Diode Forward Voltagea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Switchingb, c Turn-On Time Turn-Off Time t(on) t(off) VDD = 30 V, RL = 150 , ID = 200 mA, VGEN = 10 V, Rg = 10  25 35 ns a Symbol Test Conditions Min. 60 1 Typ. Max. Unit 2.5 ± 150 ± 500 ± 20 10 100 1 V nA µA mA 500 800 3.0 5.0 1.25 2.25 100 1.3 30  gfs VSD Ciss Coss Crss Qg VDS = 10 V, ID = 200 mA VGS = 0 V, IS = 200 mA mS V VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 250 mA, VGS = 4.5 V 6 2.5 0.6 pF nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 6V VGS = 10 V thru 7 V 0.8 I D - Drain Current (A) 5V I D - Drain Current (mA) 900 25 °C 125 °C 600 TJ = - 55 °C 1200 0.6 0.4 4V 300 0.2 3V 0.0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 3.5 RDS(on) - On-Resistance (Ω) 40 3.0 2.5 2.0 1.5 1.0 10 0.5 0.0 0 200 400 600 800 1000 0 0 5 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 30 50 Transfer Characteristics VGS = 0 V f = 1 MHz Ciss 20 Coss Crss 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA RDS(on) - On-Resistance 2.0 Capacitance V GS - Gate-to-Source Voltage (V) VGS = 10 V at 500 mA 1.6 (Normalized) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 www.vishay.com 3 Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 VGS = 0 V RDS(on) - On-Resistance (Ω) 4 5 I S - Source Current (A) 100 TJ = 125 °C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25 °C 1 TJ = - 55 °C 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 3 2.5 ID = 250 µA VGS(th) Variance (V) 0.0 Power (W) 2 On-Resistance vs. Gate-Source Voltage 0.2 - 0.2 1.5 - 0.4 1 TA = 25 °C - 0.6 0.5 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 600 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Single Pulse Power, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10- 1 1 3. TJM - T A= PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71331. www.vishay.com 4 Document Number: 71331 S10-2687-Rev. F, 22-Nov-10 Package Information www.vishay.com SC-75A: 3-LEADS L2 D e2 B1(b1) 1 2 Vishay Siliconix D A 2X e1 3 E/2 1 2 E1 E 1 1 bbb 1 2 D C B B 2X bbb C 3 4 B e3 D D 2X B1 b1 With Tin Planting c1 Base Metal A2 2XB1 ddd M C A– B Section B-B 5 A D C 4X Seating Plane A1 D Notes Dimensions in millimeters will govern. 1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but including any mismatch between the top and bottom of the plastic body. 3. Datums A, B and D to be determined 0.10 mm from the lead tip. 4. Terminal positions are shown for reference only. 5. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. MILLIMETERS DIM. A A1 A2 B1 b1 c c1 D E E1 e1 e2 e3 L L1 L2  1 0° 4° 0.15 MIN. 0.00 0.65 0.19 0.17 0.13 0.10 1.48 1.50 0.66 NOM. 0.70 1.575 1.60 0.76 0.50 BSC 1.00 BSC 0.50 BSC 0.205 0.40 REF 0.15 BSC 8° 10° 0.30 MAX. 0.80 0.10 0.80 0.24 0.21 0.15 0.12 1.68 1.70 0.86 1, 2 5 5 1, 2 5 NOTE DIMENSIONS aaa bbb ccc ddd TOLERANCES 0.10 0.10 0.10 0.10 ECN: E11-2210-Rev. D, 08-Aug-11 DWG: 5868 Revision: 08-Aug-11 1 Document Number: 71348 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C L1 3 L D bbb D 3 bbb Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 (0.356) (1.803) 0.071 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.503) 0.020 (0.798) 0.031 APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1