SI2308DS

Si2308DS Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 2.0 1.7 rDS(on) (W) 0.16 @ VGS = 10 V 0.22 @ VGS = 4.5 V D 100% Rg Tested TO-236 (SOT-23) G 1 3 D S 2 Top View Si2308DS (A8)* *Marking Code Ordering Information: Si2308DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 60 "20 2.0 1.6 10 1.0 1.25 0.80 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc Notes a. Surface Mounted on FR4 Board, t = v5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70797 S-31725—Rev. B, 18-Aug-03 www.vishay.com Symbol RthJA Maximum 100 166 Unit _C/W 1 Si2308DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS ID( ) D(on) VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 1.7 A VDS = 4.5 V, ID = 2.0 A IS = 1 A, VGS = 0 V 6 4 0.125 0.155 4.6 0.77 1.2 0.16 0.22 W S V 60 1.5 "100 0.5 10 V nA mA Symbol Test Condition Min Typ Max Unit On-State On State Drain Currenta A Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) gfs VSD Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Rg Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz , 0.5 240 50 15 p pF VDS = 30 V, VGS = 10 V, ID = 2.0 A 4.8 0.8 1.0 3.3 W 10 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. td(on) tr td(off) tf VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 7 10 17 6 15 20 35 15 ns www.vishay.com 2 Document Number: 70797 S-31725—Rev. B, 18-Aug-03 Si2308DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 12 Output Characteristics VGS = 10 thru 5 V 12 Transfer Characteristics I D - Drain Current (A) 4V 6 I D - Drain Current (A) 9 9 6 3 3V 1, 2 V 3 TC = 125_C 25_C 0 - 55_C 3 4 5 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 VGS - Gate-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 400 Capacitance r DS(on) - On-Resistance ( W ) 0.8 C - Capacitance (pF) 300 Ciss 0.6 200 0.4 VGS = 4.5 V VGS = 10 V 0.0 0 3 6 ID - Drain Current (A) 9 12 0.2 100 Crss 0 0 6 Coss 12 18 24 30 VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 2.0 A Gate Charge 2.0 1.8 r DS(on) - On-Resistance (W ) (Normalized) 1.6 1.4 1.2 1.0 0.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.0 A 8 6 4 2 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) Document Number: 70797 S-31725—Rev. B, 18-Aug-03 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2308DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.6 0.5 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.4 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) ID = 2.0 A On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C 1 0.00 Threshold Voltage 0.4 0.2 V GS(th) Variance (V) - 0.0 Power (W) - 0.2 - 0.4 3 - 0.6 - 0.8 - 50 6 ID = 250 mA 9 12 Single Pulse Power - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 TJ - Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70797 S-31725—Rev. B, 18-Aug-03