SI3460DDV

Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.028 at VGS = 4.5 V 0.032 at VGS = 2.5 V 0.038 at VGS = 1.8 V ID (A)d 7.9 7.4 6.8 6.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View D 1 6 D APPLICATIONS • DC/DC Converters • Boost Converters • Load Switch D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code BA XXX Lot Traceability and Date Code Part # Code G (3) (4) S N-Channel MOSFET G 3 4 S 2.85 mm Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Avalanche Energy TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS IAS EAS ID Symbol VDS VGS Limit 20 ±8 7.9 6.3 6.2a, b 5.0a, b 20 2.2 1.4a, b 8 3.2 2.7 1.7 1.7a, b 1.1a, b - 55 to 150 260 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 61 38 Maximum 74 46 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 120 °C/W. d. Based on TC = 25 °C. Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 www.vishay.com 1 Si3460DDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5 A, VGS = 0 V 0.8 11 3 7 4 TC = 25 °C 2.2 20 1.2 20 6 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.4 VDS = 10 V, VGS = 8 V, ID = 5 A VDS = 10 V, VGS = 4.5 V, ID = 5 A VDS = 10 V, VGS = 0 V, f = 1 MHz 666 93 41 12 6.7 0.95 0.5 2.1 6 11 21 8 5 12 19 8 4.2 12 20 32 16 10 18 29 16 ns Ω 18 10.1 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.1 A VGS = 2.5 V, ID = 4.7 A VGS = 1.8 V, ID = 2.5 A VDS = 10 V, ID = 5.1 A 20 0.023 0.027 0.031 35 0.028 0.032 0.038 S Ω 0.4 20 21 - 2.6 1.0 ± 100 1 10 V mV/°C V nA µA A Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 V GS = 5 V thru 1.8 V 4 15 I D - Drain Current (A) I D - Drain Current (A) 3 T C = 25 °C 2 5 10 5 V GS = 1.5 V V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 0 0.0 0.3 0.6 0.9 1 T C = 125 °C T C = - 55 °C 1.2 1.5 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 0.05 900 Transfer Characteristics R DS(on) - On-Resistance (Ω) Ciss 0.04 C - Capacitance (pF) 675 V GS = 1.8 V 0.03 V GS = 2.5 V 450 0.02 V GS = 4.5 V 225 Coss 0.01 0 5 10 ID - Drain Current (A) 15 20 0 0 Crss 5 10 15 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 5 A VGS - Gate-to-Source Voltage (V) 1.5 R DS(on) - On-Resistance 6 1.7 Capacitance V GS = 2.5 V; I D = 3 A (Normalized) 1.3 V DS = 5 V 4 V DS = 10 V V DS = 16 V 1.1 V GS = 4.5 V; I D = 5 A 0.9 2 0 0 3 6 9 12 15 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 www.vishay.com 3 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.060 ID = 5 A R DS(on) - On-Resistance (Ω) 0.045 T J = 125 °C 0.030 T J = 25 °C 0.015 I S - Source Current (A) T J = 150 °C 1 T J = 25 °C 0.1 0.0 0 0.3 0.6 0.9 1.2 0 2 4 6 8 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.80 25 On-Resistance vs. Gate-to-Source Voltage 20 0.65 ID = - 5 mA VGS(th) (V) Power (W) 15 0.50 ID = - 250 μA 0.35 10 5 0.20 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 100 T J - Temperature (°C) Threshold Voltage 100 Limited by R DS(on)* 10 Single Pulse Power (Junction-to-Ambient) I D - Drain Current (A) 100 μA 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 100 ms 1 s, 10 s DC 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 8 I D - Drain Current (A) Package Limited 6 4 2 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* 3.5 1.5 2.8 1.2 Power (W) 1.4 Power (W) 0 25 50 75 100 125 150 2.1 0.9 0.6 0.7 0.3 0.0 0.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66572 S10-0789-Rev. A, 05-Apr-10 www.vishay.com 5 Si3460DDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 °C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66572. www.vishay.com 6 Document Number: 66572 S10-0789-Rev. 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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1