SI3867DV-T1

Si3867DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.051 at VGS = - 4.5 V - 20 0.067 at VGS = - 3.3 V 0.100 at VGS = - 2.5 V ID (A) - 5.1 - 4.5 - 3.7 FEATURES • TrenchFET® Power MOSFET • PWM Optimized Pb-free Available APPLICATIONS • DC/DC - HDD - Power Supplies • Portable Devices Such As Cell Phones, PDA, DSC, and DVC (4) S RoHS* COMPLIANT TSOP-6 Top View 1 3 mm 6 2 5 (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3867DV-T1 Si3867DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.7 2.0 1.0 - 55 to 150 - 5.1 - 3.7 - 20 - 0.9 1.1 0.6 W °C 5 sec Steady State - 20 ± 12 - 3.9 - 2.8 A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72068 S-60422-Rev. C, 20-Mar-06 www.vishay.com 1 t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 °C/W Unit Si3867DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/µs VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A 7 2.3 1.6 17 31 32 30 25 30 50 50 50 50 ns 11 nC a a Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Test Conditions VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 85 °C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.1 A VGS = - 3.3 V, ID = - 4.5 A VGS = - 2.5 V, ID = - 2 A VDS = - 5 V, ID = - 5.1 A IS = - 1.7 A, VGS = 0 V Min - 0.6 Typ Max - 1.4 ± 100 -1 -5 Unit V nA µA A - 20 0.041 0.054 0.081 11 - 0.7 - 1.2 0.051 0.067 0.100 Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 20 VGS = 5 thru 3.5 V TC = - 55 °C 16 3V I D - Drain Current (A) 16 25 °C 125 °C 20 I D - Drain Current (A) 12 12 8 2.5 V 8 4 2V 1.5 V 4 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72068 S-60422-Rev. C, 20-Mar-06 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.20 1200 r DS(on) - On-Resistance (Ω) C - Capacitance (pF) 0.16 VGS = 2.5 V 0.12 1000 Ciss 800 600 0.08 VGS = 3.3 V VGS = 4.5 V 400 Coss 200 Crss 0.04 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 5.1 A r DS(on) - On-Resistance (Normalized) 4 1.4 1.6 VGS = 4.5 V ID = 5.1 A Capacitance V GS - Gate-to-Source Voltage (V) 3 1.2 2 1.0 1 0.8 0 0 2 4 6 8 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge 0.20 TJ = 150 °C r DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) On-Resistance vs. Junction Temperature 20 0.16 ID = 2 A 0.12 ID = 5.1 A 0.08 0.04 TJ = 25 °C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72068 S-60422-Rev. C, 20-Mar-06 www.vishay.com 3 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.4 30 0.3 V GS(th) Variance (V) ID = 250 µA 0.2 Power (W) 25 20 TA = 25 °C 10 0.1 0.0 5 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (°C) Threshold Voltage 100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 1 P(t) = 10 dc Single Pulse Power VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 °C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72068 S-60422-Rev. C, 20-Mar-06 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72068. Document Number: 72068 S-60422-Rev. C, 20-Mar-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1