SI3948DV

Si3948DV New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.105 @ VGS = 10 V 0.175 @ VGS = 4.5 V ID (A) "2.5 "2.0 D1 D2 TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G1 G2 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current (TJ = 150_C)a, b Drain Current Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg Limit 30 "20 "2.5 "2.0 "8 1.05 1.15 0.73 –55 to 150 Unit V Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Power Dissipationa, Operating Junction and Storage Temperature Range A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambient Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70969 S-61828—Rev. A, 23-Aug-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJL Typical 93 130 75 Maximum 110 150 90 Unit _C/W 2-1 Si3948DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A VDS = 10 V, ID = 2.5 A IS = 1.05 A, VGS = 0 V 5 0.0085 0.140 4.3 0.81 1.1 0.105 0.175 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.05 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W 15 V, 15 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, VDS = 15 V, VGS = 5.0 V ID = 1.8 A 15 V 0 V, 8 2.1 0.7 0.7 7 9 13 5 35 11 14 20 8 60 ns 3.2 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70969 S-61828—Rev. A, 23-Aug-99 Si3948DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 5 V 8 I D – Drain Current (A) I D – Drain Current (A) 8 25_C 10 TC = –55_C Vishay Siliconix Transfer Characteristics 6 4V 6 125_C 4 4 2 2V 0 0 1 2 3 4 5 3V 2 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.25 300 Capacitance r DS(on)– On-Resistance ( W ) 0.20 C – Capacitance (pF) 250 Ciss 0.15 VGS = 4.5 V 200 VGS = 10 V 0.10 150 100 Coss 50 Crss 0 5 10 15 20 25 30 0.05 0 0 1 2 3 4 5 6 7 0 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 Gate Charge 1.8 1.6 r DS(on)– On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 –50 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 1.8 A VGS = 10 V ID = 2.5 A 6 4 2 0 0 1 2 3 4 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70969 S-61828—Rev. A, 23-Aug-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si3948DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.40 ID = 2 A r DS(on) – On-Resistance ( W ) 0.32 ID = 2.5 A 0.24 I S – Source Current (A) On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 0.16 TJ = 25_C 0.08 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 6 V GS(th) Variance (V) –0.0 Power (W) 8 Single Pulse Power, Junction-to-Ambient 0.2 –0.2 4 –0.4 2 –0.6 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70969 S-61828—Rev. A, 23-Aug-99 Si3948DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70969 S-61828—Rev. A, 23-Aug-99 www.vishay.com S FaxBack 408-970-5600 2-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1