SI4501ADY

Specification Comparison Vishay Siliconix Si4501ADY vs. Si4501DY Description: Complementary MOSFET Half-Bridge (N- and P-Channel) Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4501ADY Replaces Si4501DY Si4501ADY—E3 (Lead Free version) Replaces Si4501DY Si4501ADY-T1 Replaces Si4501DY-T1 Si4501ADY-T1—E3 (Lead Free version) Replaces Si4501DY-T1 Summary of Performance: The Si4501ADY is the replacement for the original Si4501DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TA = 25_C Continuous Drain Current TA = 70_C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25_C TA = 70_C ID Symbol VDS VGS Channel N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si4501ADY 30 −8 "20 "8 8.8 −5.7 7.0 −4.5 30 −30 1.8 −1.8 2.5 1.6 −55 to 150 50 Si4501DY 30 −8 "20 "8 9.0 −6.2 7.4 −5.0 30 −20 1.7 −1.7 2.5 1.6 −55 to 150 50 Unit V A IDM IS PD Tj and Tstg RthJA W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si4501ADY Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State On State Drain Current VGS = 10 V VGS = −4.5 V VGS = 10 V Drain-Source On-Resistance Drain Source On Resistance VGS = −4.5 V VGS = 4.5 V VGS = −2.5 V Forward Transconductance Diode Forward Voltage gfs VSD rD ( ) Ds(on) V(BR)DSS VG(th) IGSS IDSS ID( ) D(on) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 −20 0.015 0.030 0.022 0.048 18 12 0.73 −0.75 −1.1 0.018 0.042 0.027 0.060 N-Ch P-Ch N-Ch P-Ch 30 −8 0.8 −0.45 1.8 −1.0 "100 1 −1 30 −20 0.015 0.034 0.022 0.048 20 14 0.71 −0.70 1.1 −1.1 0.018 0.042 0.027 0.060 S V W 30 −8 0.8 −0.45 "100 1 −1 V Si4501DY Max Min Typ Max Unit Symbol Channel Min Typ nA mA A Document Number: 72891 14-Jun-04 www.vishay.com 1 Specification Comparison Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si4501ADY Parameter Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11.5 13.5 3 2.2 4 3 20 20 4.5 15 3.3 3.0 6.6 2.0 20 25 nC Si4501DY Max Min Typ Max Unit Symbol Channel Min Typ Switching td(on) Turn-On Time Turn-On Time tr td(off) Turn-Off Turn Off Time tf Source-Drain Reverse Recovery Time trr N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 15 21 8 45 35 60 10 55 30 50 22 40 15 70 50 100 20 85 60 100 13 20 9 50 35 110 17 60 35 60 20 40 18 100 50 220 30 120 70 100 ns www.vishay.com 2 Document Number: 72891 14-Jun-04