SI4720

Si4720 Vishay Siliconix Battery Disconnect Switch DESCRIPTION The Si4720CY is two level-shifted P-Channel MOSFETs. Operating together, these MOSFETs can be used as a reverse blocking switch for battery disconnect applications. It is a solution for multiple battery technology designs or designs that require isolation from the power bus during charging. The Si4720CY is available in a 16-pin SOIC package and is rated for the commercial temperature range of - 25 °C to 85 °C. FEATURES • Solution for Bi-Directional Blocking • • • • • • 6 V to 30 V Operation Ground Referenced Logic Level Inputs Integrated Low RDS(on) MOSFET Level-Shifted Gate Drive with Internal MOSFET Two Independent Inputs Ultra Low Power Consumption in Off State (Leakage Current Only) • Logic Supply Voltage is Not Required FUNCTIONAL BLOCK DIAGRAM 6 G1 IN1 5 9, 10, 11 D1 ESD Logic and Gate Drive Level Shift GND1 12 VGS Limiter Half a circuit shown here. 7, 8 S1 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Voltage Referenced to GND VS, VD VSD VIN1, VIN2 VGS Storage Temperature Power Dissipationb t = 10 s t = Steady State a Symbol Limit - 0.3 to 32 - 0.3 to 30 - 0.3 to 15 20 - 55 to 150 2.5 1.5 Unit V °C W Notes: a. VSD  30 VDC. b. Device mounted with all leads soldered to 1" x 1" FR4 with laminated copper PC board. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter VS, VD VIN1, VIN2 IDS Operating Temperature Range Junction Temperature Symbol Limit 6 to 30 0 to 13.2 0 to 6 - 25 to 85 - 25 to 150 Unit V A °C This device has a maximum recommended operating junction temperature of 85 °C. This temperature limit is used for electrical specifications such as logic transition voltages only and is not a reliability limit. The device can be used with junction temperatures up to 150 °C if relaxed specifications can be tolerated, although limits for these specifications may not be given. Performance curves can be used to give an indication of specifications at higher temperatures, but are not guaranteed. SPECIFICATIONS Parameter On-Resistance Leakage Current Supply Current Input Voltage Low Input Voltage High Input Leakage Current Turn-On Delay Turn-Off Delay Break-Before-Maked Rise Time Fall Time Voltage Across pin 6 and 7 Forward Diode IN to D or S Symbol rDS IDS(off) IS(off) IS(on) VINL VINH IINH tON(IN) tOFF(IN) tBBM tRISE tFALL VGS VSD VS = 10 V, RL = 5 , Figure 1 V S = 30 ID = - 1 A Test Conditions Unless Otherwise Specified VS = 10 V, ID = 1 A, VIN = H VDS = 10 V V S = 21 V VS = 10 and VS = 21 VIN = 5 V VS = 10 V, RL = 5 , Figure 1 Limits Temp.a Room Room Room Room Full Full Full Room Room Room Room Room Room Room 2.2 2.9 1.5 1.05 1.3 50 10.2 2.5 100 18 1.1 ns V 2.5 5 10 2.1 µs 1.1 Min.b Typ.c 0.0155 Max.b 0.020 1 1 6 1 V µA µA Unit  Notes: a. Room = 25 °C, full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TIMING DIAGRAMS 10 V SOURCE VIN 0V 50 % 50 % DRAIN VD 5 tON(IN) 90 % 10 % tOFF(IN) tr 90 % 10 % tf Figure 1. PIN CONFIGURATION AND TRUTH VIN1 0 0 1 1 VIN2 0 1 0 1 Switch 1 Off Off On On Switch 2 Off On Off On D2 D2 D2 GND2 IN1 G1(OUT) S1 S1 1 2 3 4 5 6 7 8 SO-16 16 15 14 13 12 11 10 9 Top View Order Number: Si4720CY S2 S2 G2(OUT) IN2 GND1 D1 D1 D1 PIN DESCRIPTION (Subject to Change) Pin Number 1, 2, 3 4, 12 5 6 7, 8 9, 10, 11 13 14 15, 16 Symbol D2 GND IN1 G1(OUT) S1 D1 IN2 G2(OUT) S2 Description Drain connection for MOSFET-2. Ground Logic input, IN1. High level turns on the switch. Gate output to MOSFET-1. Source connection for MOSFET-1. Drain connection for MOSFET-1. Logic input, IN2. High level turns on the switch. Gate output to MOSFET-2. Source connection for MOSFET-2. Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 0.030 RDS(on) - Drain-Source On-Resistance () 0.10 0.025 r DS(on) - Drain-Source On-Resistance () 0.08 0.020 VS = 10 V 0.015 0.06 0.04 IS = 1 A 0.02 0.010 0.005 0.000 0 1 2 3 IS (A) 4 5 6 0 0 2 4 6 8 10 VS (V) 12 14 16 18 20 On-Resistance vs. Drain Current 1.8 1.6 R DS(on) - On-Resistance (Normalized) 1.4 VS = 10 V IS = 1 A On-Resistance vs. Source Voltage 2500 2000 C OSS (pF) 1.2 1.0 0.8 1500 1000 VIN = 0 V 500 0.6 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0 5 10 15 VS (V) 20 25 30 TJ - Junction Temperature (°C) Normalized On-Resistance vs. Junction Temperature 10.000 TJ = 150 °C 1.000 1.000 10.000 Output Capacitance vs. Source Voltage TJ = 150 °C TJ = 25 °C I S ( µA) I S ( µA) TJ = 25 °C 0.100 0.100 0.010 0.010 0.001 0 5 10 15 VS (V) 20 25 30 0.001 0 5 10 15 VS (V) 20 25 30 Off-Supply Current vs. Source Voltage On-Supply Current vs. Source Voltage www.vishay.com 4 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 10 1.8 1.6 I S - Source Current (A) TJ = 150 °C TJ = 25 °C V IN Trip Point 1.4 VS = 21 V 1.2 VS = 10 V 1.0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1.4 0.8 - 50 - 25 0 25 50 75 100 125 150 TA = Ambient Temperature (°C) Drain-Source Diode Forward Voltage 4.0 VS = 10 V Rl = 5  3.6 Input Voltage Trip Point vs. Temperature 2.0 VS = 10 V Rl = 5  1.8 2.8 t d(off) ( s) - 25 0 25 50 75 100 125 150 t d(on) (µs) 3.2 1.6 1.4 2.4 1.2 2.0 - 50 1.0 - 50 - 25 0 25 50 75 100 125 150 Temperature (°C) Temperature (°C) Turn-On Delay vs. Temperature Turn-off Delay vs. Temperature 1.8 VS = 10 V Rl = 5  80 VS = 10 V Rl = 5  1.6 70 1.4 t rise (µs) t fall (ns) 60 1.2 50 1.0 40 0.8 30 0.6 - 50 - 25 0 25 50 75 100 125 150 20 - 50 - 25 0 25 50 75 100 125 150 Temperature (°C) Temperature (°C) Rise Time vs. Temperature Fall Time vs. Temperature Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 80 60 Power (W) 40 20 0 0.01 0.1 1 Time (sec) 10 100 Single Pulse Power 2 1 Duty Cycle = 0.5 Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 6 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix APPLICATION DRAWINGS Si4720CY Si4435DY D1 S1 Battery 1 G1 Logic In 1 Drive Si4435DY D2 Battery 2 G2 S2 DC/DC Logic In 2 Drive Figure 2. S1 G1 S2 G2 Si4720CY Drive Drive D1 Battery 2 Logic In D2 DC/DC S1 G1 S2 G2 Si4720CY Drive Drive D1 Battery 1 Logic In D2 Figure 3. Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix APPLICATION DRAWINGS 1/2 Si4720 AC/DC Display Power 1/2 Si4720 Charger 7 - 30 V 3 - 5 Cell Li-Ion Logic In Drive Logic In Drive DC/DC 5V 3.3 V Figure 4. Low-Cost Laptop PC 1/2 Si4720 1/2 Si4720 Display Power AC/DC Charger Logic In Drive Logic In Drive DC/DC 5V 3.3 V 7 - 30 V 3 - 5 Cell Li-Ion 1/2 Si4720 1/2 Si4720 Si6415 Logic In Drive Logic In Drive 7 - 30 V 3 - 5 Cell Li-Ion 1/2 Si4720 1/2 Si4720 Si6415 Logic In Drive Logic In Drive Figure 5. High-Performance Laptop PC Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70664. www.vishay.com 8 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16 LEAD JEDEC Part Number: MS-012 MILLIMETERS Dim A A1 B C D E e H L Min 1.35 0.10 0.38 0.18 9.80 3.80 INCHES Min 0.053 0.004 0.015 0.007 0.385 0.149 Max 1.75 0.20 0.51 0.23 10.00 4.00 Max 0.069 0.008 0.020 0.009 0.393 0.157 16 15 14 13 12 11 10 9 E 1.27 BSC 5.80 0.50 0_ 6.20 0.93 8_ 0.050 BSC 0.228 0.020 0_ 0.244 0.037 8_ 1 2 3 4 5 6 7 8 ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 D H C All Leads e B A1 0.101 mm L 0.004 IN Document Number: 71194 02-Jul-01 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1