SI5441DC-T1-E3

Si5441DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.055 @ VGS = −4.5 V −20 0.06 @ VGS = −3.6 V 0.083 @ VGS = −2.5 V FEATURES ID (A) −5.3 −5.1 −4.3 11 Qg (Typ) D TrenchFETr Power MOSFET D 2.5-V Rated Pb-free Available 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BA XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5441DC Si5441DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −20 "12 Unit V −5.3 −3.8 −20 −2.1 2.5 1.3 −55 to 150 260 −3.9 −2.8 −1.1 1.3 0.7 W _C A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71055 S-50366—Rev. C, 28-Feb-05 www.vishay.com 1 Si5441DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS p−5 V, VGS = −4.5 V VGS = −4.5 V, ID = −3.9 A VGS = −3.6 V, ID = −3.7 A VGS = −2.5 V, ID = −3.1 A VDS = −10 V, ID = −3.9 A IS = −1.1 A, VGS = 0 V −20 0.046 0.050 0.070 12 −0.8 −1.2 0.055 0.06 0.083 S V W −0.6 −1.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.1 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −10 V, VGS = −4.5 V, ID = −3.9 A , , 11 3.0 2.5 20 35 65 45 30 30 55 100 70 60 ns 22 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3 V 20 Transfer Characteristics TC = −55_C 16 I D − Drain Current (A) 25_C 16 I D − Drain Current (A) 2.5 V 12 12 125_C 8 8 2V 4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 71055 S-50366—Rev. C, 28-Feb-05 2 Si5441DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) − On-Resistance ( W ) 1800 1500 0.15 VGS = 2.5 V 0.10 VGS = 3.6 V 0.05 VGS = 4.5 V 0.00 0 4 8 12 16 20 300 Crss 0 0 4 8 12 16 20 C − Capacitance (pF) 1200 900 600 Coss Ciss Capacitance ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 3.9 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.9 A 3 1.2 2 1.0 1 0.8 0 0 3 6 9 12 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.15 0.20 On-Resistance vs. Gate-to-Source Voltage ID = 3.9 A 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71055 S-50366—Rev. C, 28-Feb-05 www.vishay.com 3 Si5441DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) 40 ID = 250 mA Power (W) 30 0.2 20 0.0 10 −0.2 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71055. www.vishay.com Document Number: 71055 S-50366—Rev. C, 28-Feb-05 4