SI6926ADQ-T1-E3

Si6926ADQ New Product Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = 4.5 V 20 0.033 @ VGS = 3.0 V 0.035 @ VGS = 2.5 V 0.043 @ VGS = 1.8 V ID (A) 4.5 4.2 3.9 3.6 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 Ordering Information: Si6926ADQ-T1—E3 (Lead Free) N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "8 4.5 3.6 20 0.83 1.0 0.64 Steady State Unit V 4.1 3.3 A 0.69 0.83 0.53 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72754 S-40230—Rev. A, 16-Feb-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 90 126 65 Maximum 125 150 80 Unit _C/W 1 Si6926ADQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 5 V VGS = 4.5 V, ID = 4.5 A Drain-Source On-State Resistance Drain-Source On-State Resistanceb rDS(on) VGS = 3.0 V, ID = 4.2 A VGS = 2.5 V, ID = 3.9 A VGS = 1.8 V, ID = 3.6 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 10 V, ID = 4.5 A IS = 0.83 A, VGS = 0 V 10 0.024 0.026 0.029 0.035 26 0.6 1.1 0.030 0.033 0.035 0.043 S V W 0.40 1.0 "100 1 5 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 0.83 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W VDS = 10 V, VGS = 4.5 V, ID = 4.5 A 7.5 1.2 1.2 1.9 6 16 46 9 20 12 25 70 15 40 ns W 10.5 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 20 Transfer Characteristics 12 1.5 V 12 8 8 TC = 125_C 4 25_C −55_C 1.00 1.25 1.50 1.75 2.00 4 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.00 0.25 0.50 0.75 VGS − Gate-to-Source Voltage (V) Document Number: 72754 S-40230—Rev. A, 16-Feb-04 2 Si6926ADQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) − On-Resistance ( W ) 1200 1000 VGS = 2.5 V 0.03 VGS = 3.0 V C − Capacitance (pF) 800 600 400 200 0 4.0 8.0 12.0 16.0 20.0 0 Crss 4 8 12 16 20 Coss Vishay Siliconix Capacitance 0.04 Ciss 0.02 VGS = 4.5 V 0.01 0.00 0.0 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) VDS = 10 V ID = 4.5 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.5 A 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.08 0.07 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage ID = 4.5 A TJ = 25_C 1 0.0 1 2 3 4 5 6 7 8 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72754 S-40230—Rev. A, 16-Feb-04 www.vishay.com 3 Si6926ADQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 250 mA −0.0 Power (W) −0.1 −0.2 −0.3 −0.4 −50 20 15 10 5 30 25 Single Pulse Power, Junction-to-Ambient −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) IDM Limited 10 I D − Drain Current (A) 1 ms 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 10 ms 100 ms 1s 10 s dc 100 0.01 0.1 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 126_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72754 S-40230—Rev. A, 16-Feb-04 Si6926ADQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10−4 Single Pulse 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72754 S-40230—Rev. A, 16-Feb-04 www.vishay.com 5