SI7358ADP

Si7358ADP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0042 @ VGS = 10 V 0.0059 @ VGS = 4.5 V ID (A) 23 20 Qg (Typ) 30.5 D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS PowerPAK SO-8 D DC/DC Converters D Synchronous Rectifiers 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7358ADP-T1 Si7358ADP-T1—E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS PD TJ, Tstg 10 secs 30 "20 23 18 60 4.5 50 5.4 3.4 Steady State Unit V 14 11 A 1.6 1.9 1.2 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73161 S-41959—Rev. A, 25-Oct-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7358ADP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 23 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 23 A IS = 4.5 A, VGS = 0 V 30 0.0032 0.0045 90 0.75 1.1 0.0042 0.0059 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 23 A , 5, VDS = 15 V, Vss = 0 V, f = 1 kHz 4650 880 390 30.5 12.5 10 1.0 21 10 83 27 50 1.5 35 20 130 45 80 ns W 40 nC C p pF Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 40 30 20 10 0 0 1 2 3 4 5 3V 50 40 30 20 TC = 125_C 10 0 0.0 25_C −55_C 3.0 3.5 4.0 60 Transfer Characteristics I D − Drain Current (A) I D − Drain Current (A) 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 73161 S-41959—Rev. A, 25-Oct-04 2 Si7358ADP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.010 Vishay Siliconix On-Resistance vs. Drain Current 6000 5000 C − Capacitance (pF) 4000 3000 2000 Capacitance r DS(on) − On-Resistance ( W ) 0.008 Ciss 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 Coss 1000 0 0 10 20 30 40 50 0 5 10 15 20 25 30 Crss 0.000 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 5 10 VDS = 15 V ID = 23 A Gate Charge 1.8 1.6 rDS(on) − On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 23 A 15 20 25 30 35 40 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.020 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.016 ID = 23 A I S − Source Current (A) 0.012 TJ = 25_C 0.008 0.004 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 73161 S-41959—Rev. A, 25-Oct-04 0.000 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7358ADP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 Power (W) ID = 250 mA 60 50 Single Pulse Power V GS(th) Variance (V) 40 30 20 10 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 * Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area 1 ms 10 ms 100 ms 1s TC = 25_C Single Pulse 10 s dc 1 0.1 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 73161 S-41959—Rev. A, 25-Oct-04 Si7358ADP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73161 Document Number: 73161 S-41959—Rev. A, 25-Oct-04 www.vishay.com 5