SI7844DP

Si7844DP New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 10 8.5 D1 D1 PowerPAKt D2 D2 6.15 mm S1 1 2 5.15 mm G1 S2 3 4 D1 G2 G1 G2 8 7 D1 D2 6 5 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 10 Steady State Unit V 6.4 5.1 20 A 1.1 1.4 0.9 –55 to 150 W _C ID IDM IS PD TJ, Tstg 8.0 2.9 3.5 2.2 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71328 S-02456—Rev. A, 06-Nov-00 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 60 3.9 Maximum 35 85 5.5 Unit _C/W 1 Si7844DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8.5 A VDS = 15 V, ID = 10 A IS = 2.9 A, VGS = 0 V 20 0.018 0.024 22 0.75 1.2 0.022 0.030 S V 0.8 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 10 A 13 2 2.7 8 10 21 10 40 16 20 40 20 80 ns 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 4 V 16 I D – Drain Current (A) I D – Drain Current (A) 3V 16 20 Transfer Characteristics 12 12 8 8 TC = 125_C 4 25_C –55_C 4 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71328 S-02456—Rev. A, 06-Nov-00 Si7844DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) – On-Resistance ( W ) 1000 Vishay Siliconix Capacitance C – Capacitance (pF) 0.032 800 Ciss 600 0.024 VGS = 4.5 V VGS = 10 V 0.016 400 Coss 200 Crss 0.008 0.000 0 4 8 12 16 20 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 10 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 1.4 6 r DS(on) – On-Resistance ( W) (Normalized) 6 9 12 15 1.2 4 1.0 2 0.8 0 0 3 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S – Source Current (A) 10 0.04 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) ID = 10 A 0.03 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71328 S-02456—Rev. A, 06-Nov-00 www.vishay.com 3 Si7844DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 100 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA –0.0 Power (W) 80 60 –0.2 40 –0.4 20 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 60_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71328 S-02456—Rev. A, 06-Nov-00