SI9433BDY-E3

Si9433BDY New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) 0.040 @ VGS = −4.5 V 0.060 @ VGS = −2.7 V ID (A) −6.2 −5.0 S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si9433BDY—E3 (Lead Free) Si9433BDY-T1—E3 (Lead Free with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "12 Unit V −6.2 −5.0 −20 −2.3 2.5 1.6 −55 to 150 −4.5 −3.5 A −1.2 1.3 0.8 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72755 S-40242—Rev. A, 16-Feb-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 45 80 20 Maximum 50 95 24 Unit _C/W 1 Si9433BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS ID( ) D(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 70_C VDS v−5 V, VGS = −4.5 V VDS v−5 V, VGS = −2.7 V VGS = −4.5 V, ID = −6.2 A VGS = −2.7 V, ID = −5.0 A VDS = −9 V, ID = −6.2 A IS = −2.6 A, VGS = 0 V −20 −5 0.030 0.050 15 −0.76 −1.1 0.040 0.060 −0.6 −1.5 "100 −1 −10 V nA mA Symbol Test Condition Min Typa Max Unit On-State On State Drain Currentb A Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb W S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.3 A, di/dt = 100 A/ms VDD = −6 V, RL = 6 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −6 V, VGS = −4.5 V, ID = −6.2 A 8.8 1.8 2.4 8.5 40 55 65 30 35 60 85 100 45 55 ns W 14 nC Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3 V 16 I D − Drain Current (A) I D − Drain Current (A) 2.5 V 12 16 20 Transfer Characteristics 12 8 2V 8 TC = 125_C 4 25_C −55_C 4 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 72755 S-40242—Rev. A, 16-Feb-04 2 Si9433BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) − On-Resistance ( W ) 1500 Vishay Siliconix Capacitance C − Capacitance (pF) 0.12 1200 Ciss 900 0.09 0.06 VGS = 2.7 V VGS = 4.5 V 600 0.03 300 Crss Coss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 2 4 6 8 10 12 Qg − Total Gate Charge (nC) VDS = 6 V ID = 6.2 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.2 A 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.15 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.12 ID = 6.2 A 0.09 I S − Source Current (A) TJ = 150_C TJ = 25_C 1 0.06 0.03 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72755 S-40242—Rev. A, 16-Feb-04 www.vishay.com 3 Si9433BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 40 ID = 250 mA Power (W) 30 Single Pulse Power 0.4 V GS(th) Variance (V) 0.2 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 1s 10 s dc 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72755 S-40242—Rev. A, 16-Feb-04 Si9433BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72755 S-40242—Rev. A, 16-Feb-04 www.vishay.com 5