SIA778DJ

New Product SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.225 at VGS = - 4.5 V 0.270 at VGS = - 2.5 V 0.345 at VGS = - 1.8 V 0.960 at VGS = - 1.5 V PowerPAK SC-70-6 Dual D2 1 S1 2 G1 D1 D1 6 5 2.05 mm G2 4 S2 2.05 mm D2 Part # code 3 D2 D1 200 Ω G2 G1 Lot Traceability and Date Code S1 FEATURES ID (A) 4.5a 4.5a 4.5a 4.5a 1.5a 1.5a 1.5a 0.5a Qg (Typ.) Channel 1 12 5.6 nC Channel 2 20 1.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Performance for Channel 2: 2800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • N-Channel Level Shift Load Switch for Portable Devices - for 0 V to 8 V Power Lines Marking Code CGX XXX Ordering Information: SiA778DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Channel 1 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 Channel 2 20 ±6 1.5a 1.5a 1.5b, c 1.5b, c 4 1.5a 1.5b, c 5 3.2 1.9b, c 1.2b, c Unit V A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Channel 1 Parameter b, f Channel 2 Typ. 52 20 Max. 65 25 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W. Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 1 t≤5s Steady State Symbol RthJA RthJC Typ. 52 12.5 Max. 65 16 New Product SiA778DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 0 V, VGS = ± 6 V VDS = 12 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V VDS = 12 V, VGS = 0 V, TJ = 55 °C VDS = 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 4.5 V VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5 A VGS = 4.5 V, ID = 1.6 A VGS = 2.5 V, ID = 4.6 A Drain-Source On-State Resistanceb RDS(on) VGS = 2.5 V, ID = 1.5 A VGS = 1.8 V, ID = 4.1 A VGS = 1.8 V, ID = 1.3 A VGS = 1.5 V, ID = 2 A VGS = 1.5 V, ID = 0.3 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Ch-1 Channel 1 VDS = 6 V, VGS = 0 V, f = 1 MHz VDS = 6 V, VGS = 8 V, ID = 6.5 A Total Gate Charge Qg VDS = 10 V, VGS = 5 V, ID = 1.7 A Channel 1 VDS = 6 V, VGS = 4.5 V, ID = 6.5 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel 2 VDS = 10 V, VGS = 4.5 V, ID = 1.7 A f = 1 MHz Ch-1 Ch-1 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.7 40 500 160 100 9.7 1.3 5.6 1.1 0.72 0.2 0.74 0.1 3.5 200 7 400 Ω 15 2.2 8.5 1.7 nC pF gfs VDS = 6 V, ID = 5 A VDS = 10 V, ID = 1.6 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 15 4 0.024 0.183 0.028 0.220 0.032 0.275 0.042 0.320 21 3.5 0.029 0.225 0.034 0.270 0.044 0.345 0.065 0.960 S Ω 0.4 0.4 12 20 12 21 - 2.5 - 2.3 1 1 ± 100 1 1 1 10 10 A µA V nA mA mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb Channel 1 IF = 5.2 A, dI//dt = 100 A/µs, TJ = 25 °C Channel 2 IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5.2 A, VGS = 0 V IS = 1.3 A, VGS = 0 V TC = 25 °C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.85 0.9 20 50 5 30 8 115 12 35 ns 4.5 1.5 20 4 1.2 1.2 40 75 10 45 V ns nC A td(on) tr td(off) tf Ch-1 Channel 1 VDD = 6 V, RL = 1.2 Ω ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 Ω Channel 2 VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 10 20 10 12 22 70 10 20 15 30 15 20 30 105 15 30 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 3 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 5 V thru 2 V 15 I D - Drain Current (A) I D - Drain Current (A) 4 3 10 VGS = 1.5 V 2 TC = 25 °C 1 TC = 125 °C 5 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.3 0.6 0.9 TC = - 55 °C 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 800 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.08 VGS = 1.8 V C - Capacitance (pF) VGS = 1.5 V 0.06 600 Ciss 400 Coss 200 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V Crss 0 0.00 0 5 10 ID - Drain Current (A) 15 20 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 6.5 A R DS(on) - On-Resistance 6 VDS = 3 V 4 VDS = 6 V 2 VDS = 9.6 V 1.6 1.5 1.4 1.3 (Normalized) 1.2 1.1 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 5 A VGS = 1.5 V; ID = 2 A 1.0 0.9 0.8 0 0 4 8 12 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 0.07 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 0.06 0.05 0.04 0.03 ID = 2 A; TJ = 25 °C 0.02 0.01 0.1 0.0 0.00 0.0 ID = 5 A; TJ = 25 °C ID = 2 A; TJ = 125 °C ID = 5 A; TJ = 125 °C TJ = 25 °C 1 0.2 0.4 0.6 0.8 1.0 1.2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 20 On-Resistance vs. Gate-to-Source Voltage 0.7 15 0.6 VGS(th) (V) ID = 250 µA 0.5 Power (W) 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 100 µs 1 ms 10 ms TA = 25 °C Single Pulse 0.1 BVDSS Limited 100 ms, 1 s 10 s, DC 1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 5 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 8 12 Power Dissipation (W) I D - Drain Current (A) 6 9 4 6 Package Limited 3 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 0.01 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 7 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 35 30 I GSS - Gate Current (mA) 25 20 15 10 5 0 0 2 4 6 8 I GSS - Gate Current (A) 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 0 2 4 6 8 TJ = 150 °C TJ = 25 °C VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage 4.0 3.5 3.0 I D - Drain Current (A) 2.5 2.0 VGS = 1.5 V 1.5 1.0 0.4 0.5 VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 VGS = 5 V thru 2 V 1.6 I D - Drain Current (A) 2.0 Gate Current vs. Gate-to-Source Voltage 1.2 0.8 TC = 25 °C TC = 125 °C TC = - 55 °C 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.50 0.45 R DS(on) - On-Resistance (Ω) VGS = 1.5 V 0.40 0.35 0.30 0.25 0.20 VGS = 4.5 V 0.15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 VGS = 2.5 V VGS = 1.8 V Transfer Characteristics ID = 1.7 A VGS - Gate-to-Source Voltage (V) 4 VDS = 10 V VDS = 16 V 2 0.3 0.6 0.9 1.2 1.5 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge www.vishay.com 8 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.7 1.6 1.5 R DS(on) - On-Resistance 1.4 (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 - 50 0.01 0.0 VGS = 1.5 V; ID = 0.4 A I S - Source Current (A) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A 1 10 0.1 TJ = 150 °C TJ = 25 °C - 25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) Normalized On-Resistance vs. Junction Temperature 1.0 ID = 1.6 A R DS(on) - On-Resistance (Ω) 0.8 6 Power (W) 0.6 8 Source-Drain Diode Forward Voltage 4 0.4 TJ = 125 °C 2 TJ = 25 °C 0.2 0.0 0 1 2 3 4 5 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.9 10 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* 0.8 I D - Drain Current (A) 1 100 µs 1 ms 10 ms 100 ms VGS(th) (V) 0.7 ID = 250 µA 0.6 0.1 1 s, 10 s DC 0.5 TA = 25 °C Single Pulse 0.4 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 BVDSS Limited TJ - Temperature (°C) Threshold Voltage 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 9 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 4 0.9 3 I D - Drain Current (A) 0.8 2 Package Limited VGS(th) (V) 0.7 ID = 250 µA 0.6 1 0.5 0 0 25 50 75 100 125 150 0.4 - 50 - 25 0 25 50 75 100 125 150 TC - Case Temperature (°C) TJ - Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65669. Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1