SIB800EDK

New Product SiB800EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode FEATURES ID (A)a 1.5 1.5 1.5 0.5 Qg (Typ.) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.225 at VGS = 4.5 V 20 0.270 at VGS = 2.5 V 0.345 at VGS = 1.8 V 0.960 at VGS = 1.5 V 1.1 nC SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (V) Diode Forward Voltage 0.29 at 10 mA IF (A)a 0.4 • Halogen-free According to IEC 61249-2-21 • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile • Typical ESD Protection 2800 V APPLICATIONS • Portable Devices • DC/DC Converters D K PowerPAK SC75-6L-Dual 1 A 2 NC K K 6 G 5 1.60 mm 4 S D 3 D Marking Code GAX Part # code XXX Lot Traceability and Date code 200 Ω G 1.60 mm Ordering Information: SiB800EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) S A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) TC = 25 °C Maximum Power Dissipation (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C Maximum Power Dissipation (Schottky) TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS IF IFM ID Symbol VDS VKA VGS Limit 20 30 ±6 1.5a 1.5a 1.5a, b, c 1.3b, c 4 1.5a 0.9b, c 0.4b 0.8 3.1 2 1.1b, c 0.7b, c 3.1 2 1.1b, c 0.7b, c - 55 to 150 260 W A V Unit °C Document Number: 68860 S-83045-Rev. B, 22-Dec-08 www.vishay.com 1 New Product SiB800EDK Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, f Maximum Junction-to-Case (Drain) (Schottky) t≤5s Steady State t≤5s Steady State Symbol RthJA RthJC RthJA RthJC Typical 90 32 90 32 Maximum 115 40 115 40 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 125 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 3 V VDS = 0 V, VGS = ± 6 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.6 A VGS = 2.5 V, ID = 1.5 A VGS = 1.8 V, ID = 1.3 A VGS = 1.5 V, ID = 0.3 A Forward Transconductancea gfs Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD IS = 1.3 A, VGS = 0 V 0.9 TC = 25 °C VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 1.7 A VDS = 10 V, ID = 1.6 A Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage 1.5 4 1.2 A V 4 0.183 0.220 0.275 0.320 3.5 1.1 0.2 0.1 200 20 12 70 20 30 20 105 30 ns Ω 1.7 nC 0.225 0.270 0.345 0.960 S Ω 0.4 20 21 - 2.3 1.0 ±1 ±1 1 10 V mV/°C V µA mA µA A Symbol Test Conditions Min. Typ. Max. Unit Drain-Source On-State Resistancea RDS(on) Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 New Product SiB800EDK Vishay Siliconix SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Symbol VF Test Conditions IF = 10 mA IF = 10 mA, TJ = 125 °C IF = 0.1 A Maximum Reverse Leakage Current Junction Capacitance Irm CT V r = 20 V Vr = 20 V, TJ = 85 °C V r = 15 V Min. Typ. 0.23 0.11 0.32 0.005 0.150 16 Max. 0.29 0.14 0.38 0.050 1.5 mA pF V Unit Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 10 1 I R - Reverse Current (mA) VR = 30 V 10-1 VR = 20 V 10-2 VR = 10 V 10-3 VR = 5 V I F - Forward Current (A) 1 TJ = 150 °C 0.1 TJ = 25 °C 10-4 0 25 50 75 100 125 150 T J - Junction Temperature (°C) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Reverse Current vs. Junction Temperature 120 Forward Voltage Drop Junction Capacitance (pF) 90 60 30 0 0 5 10 15 20 25 30 VKA - Reverse Voltage (V) Capacitance Document Number: 68860 S-83045-Rev. B, 22-Dec-08 www.vishay.com 3 New Product SiB800EDK Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Notes: 0.1 0.02 Single Pulse 0.05 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 0.1 10-4 Normalized Thermal Transient Impedance, Junction-to-Case www.vishay.com 4 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 New Product SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 35 30 I GSS - Gate Current (mA) 25 20 15 10 5 0 0 2 4 6 8 I GSS - Gate Current (A) 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 0 2 4 6 8 TJ = 150 °C TJ = 25 °C VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage 4.0 3.5 3.0 I D - Drain Current (A) 2.5 2.0 VGS = 1.5 V 1.5 1.0 0.4 0.5 VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 VGS = 5 thru 2 V 1.6 I D - Drain Current (A) 2.0 Gate Current vs. Gate-to-Source Voltage 1.2 0.8 TC = 25 °C TC = 125 °C TC = - 55 °C 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.50 0.45 R DS(on) - On-Resistance (Ω) VGS = 1.5 V 0.40 0.35 0.30 0.25 0.20 VGS = 4.5 V 0.15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 VGS = 2.5 V VGS = 1.8 V Transfer Characteristics ID = 1.7 A VGS - Gate-to-Source Voltage (V) 4 VDS = 10 V VDS = 16 V 2 0.3 0.6 0.9 1.2 1.5 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge Document Number: 68860 S-83045-Rev. B, 22-Dec-08 www.vishay.com 5 New Product SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.7 1.6 1.5 R DS(on) - On-Resistance 1.4 (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 - 50 0.01 0.0 VGS = 1.5 V; ID = 0.4 A I S - Source Current (A) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A 1 10 0.1 TJ = 150 °C TJ = 25 °C - 25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) Normalized On-Resistance vs. Junction Temperature 1.0 ID = 1.6 A R DS(on) - On-Resistance (Ω) 0.8 6 8 Source-Drain Diode Forward Voltage 0.6 Power (W) 4 0.4 TJ = 125 °C 2 0.2 TJ = 25 °C 0.0 0 1 2 3 4 5 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.9 10 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* 0.8 I D - Drain Current (A) 100 µs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.4 - 50 0.01 0.1 100 ms 1 s, 10 s DC VGS(th) (V) 0.7 ID = 250 µA 0.6 0.5 - 25 0 25 50 75 100 125 150 1 10 100 TJ - Temperature (°C) Threshold Voltage VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 6 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 New Product SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 4 4 I D - Drain Current (A) Power Dissipation (W) 3 3 2 Package Limited 2 1 1 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68860 S-83045-Rev. B, 22-Dec-08 www.vishay.com 7 New Product SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Notes: 0.1 0.02 Single Pulse 0.05 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 0.1 10-4 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68860. www.vishay.com 8 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 Package Information Vishay Siliconix PowerPAK® SC75-6L PIN1 e b e b PIN2 PIN3 L PIN1 PIN2 PIN3 L D2 E1 E2 K4 E1 K D1 K E3 D1 D1 K PIN6 K3 PIN5 PIN4 K1 K2 PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E A1 C z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 0.15 0.675 0 0.18 0.15 1.53 0.57 0.10 1.53 1.00 0.20 0.32 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.67 0.20 1.60 1.10 0.25 0.37 0.50 BSC 0.180 TYP 0.275 TYP 0.200 TYP 0.255 TYP 0.300 TYP 0.25 0.35 0.006 Max 0.80 0.05 0.33 0.25 1.70 0.77 0.30 1.70 1.20 0.30 0.42 Min 0.027 0 0.007 0.006 0.060 0.022 0.004 0.060 0.039 0.008 0.013 INCHES Nom 0.030 0.010 0.008 0.063 0.026 0.008 0.063 0.043 0.010 0.015 0.020 BSC 0.007 TYP 0.011 TYP 0.008 TYP 0.010 TYP 0.012 TYP 0.010 0.014 0.15 0.03 0.25 0.08 Max 0.032 0.002 0.013 0.010 0.067 0.030 0.012 0.067 0.047 0.012 0.017 0.50 BSC 0.245 TYP 0.320 TYP 0.200 BSC 1.53 0.51 1.60 0.61 Min 0.675 0 0.18 0.15 1.53 0.34 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.44 E1 DUAL PAD INCHES Max 0.80 0.05 0.33 0.25 1.70 0.54 1.70 0.71 Min 0.027 0 0.007 0.006 0.060 0.013 0.060 0.020 Nom 0.030 0.010 0.008 0.063 0.017 0.063 0.024 Max 0.032 0.002 0.013 0.010 0.067 0.021 0.067 0.028 0.020 BSC 0.010 TYP 0.013 TYP 0.008 TYP 0.35 0.13 0.006 0.001 0.010 0.003 0.014 0.005 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Dual 2.2 (0.087) 1.25 (0.049) 0.25 (0.01) 2.2 (0.087) (0.024) 0.61 (0,0) 0.32 (0.013) (0.063) 1.6 0.44 (0.017) 0.25 (0.01) 0.375 (0.015) 1 Return to Index 0.5 (0.02) Dimensions in mm/(Inches) APPLICATION NOTE Document Number: 70489 Revision: 28-Oct-08 www.vishay.com 15 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1