SIHFS9N60A-E3

IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 49 13 20 Single D FEATURES 600 0.75 • Low Gate Charge Qg results in Simple Drive Requirement Ruggedness Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available D2PAK (TO-263) APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply G • High Speed Power Switching GD S S N-Channel MOSFET APPLICABLE OFF LINE SMPS TOPOLOGIES • Active Clamped Forward • Main Switch ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFS9N60APbF SiHFS9N60A-E3 IRFS9N60A SiHFS9N60A D2PAK (TO-263) IRFS9N60ATRRPbFa SiHFS9N60ATR-E3a IRFS9N60ATRRa SiHFS9N60ATRa D2PAK (TO-263) IRFS9N60ATRLPbFa SiHFS9N60ATL-E3a IRFS9N60ATRLa SiHFS9N60ATLa ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 30 9.2 5.8 37 1.3 290 9.2 17 170 5.0 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C UNIT V A Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 Ω, IAS = 9.2 A (see fig. 12). c. ISD ≤ 9.2 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91287 S-Pending-Rev. A, 22-Jul-08 www.vishay.com 1 WORK-IN-PROGRESS IRFS9N60A, SiHFS9N60A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 0.75 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 5.5 Ab VDS = 25 V, ID = 3.1 A 600 2.0 5.5 0.66 - 4.0 ± 100 25 250 0.75 - V V/°C V nA µA Ω S Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V VDS = 480 V, f = 1.0 MHz VDS = 0 V to 480 VGS = 10 V Vc - 1400 180 7.1 1957 49 96 13 25 30 22 49 13 20 ns nC pF ID = 9.2 A, VDS = 400 V see fig. 6 and 13b - VDD = 300 V, ID = 9.2 A RG = 9.1 Ω, RD = 35.5 Ω, see fig. 10b - - 530 3.0 9.2 A 37 1.5 800 4.4 V ns µC G S TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91287 S-Pending-Rev. A, 22-Jul-08 IRFS9N60A, SiHFS9N60A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 10 TJ = 150 ° C TJ = 25 ° C 1 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 100 TOP r DS(on), Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 3.0 ID = 9.2A 2.5 2.0 10 1.5 1.0 4.7V 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 0.5 1 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91287 S-Pending-Rev. A, 22-Jul-08 www.vishay.com 3 IRFS9N60A, SiHFS9N60A Vishay Siliconix 2400 2000 C, Capacitance (pF) iss 1600 ISD , Reverse Drain Current (A) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 100 10 oss 1200 TJ = 150 ° C 800 1 TJ = 25 ° C 400 rss 0 1 10 100 1000 A 0.1 0.2 V GS = 0 V 0.5 0.7 1.0 1.2 VDS , Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 ID = 9.2A VDS = 480V VDS = 300V VDS = 120V 1000 VGS , Gate-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY RDS(on) 16 12 ID , Drain Current (A) 100 10us 10 100us 1ms 1 10ms 8 4 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area VDS , Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 91287 S-Pending-Rev. A, 22-Jul-08 IRFS9N60A, SiHFS9N60A Vishay Siliconix RD 10.0 VGS VDS D.U.T. + - VDD 10 V 8.0 RG ID , Drain Current (A) 6.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 4.0 VDS 90 % 2.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig. 9 - Maximum Drain Current vs. Case Temperature 1 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V VDS tp VDS L Driver RG 20 V tp D.U.T IAS 0.01 Ω + A - VDD IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91287 S-Pending-Rev. A, 22-Jul-08 www.vishay.com 5 IRFS9N60A, SiHFS9N60A Vishay Siliconix EAS , Single Pulse Avalanche Energy (mJ) 600 TOP 500 BOTTOM ID 4.1A 5.8A 9.2A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 12 V 10 V QGS QG 0.2 µF 0.3 µF QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91287 S-Pending-Rev. A, 22-Jul-08 IRFS9N60A, SiHFS9N60A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91287. Document Number: 91287 S-Pending-Rev. A, 22-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1