SMA6J18A

New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor Surface Mount Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Available in uni-directional polarity only • Excellent clamping capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s DO-214AC (SMA) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS VWM PPPM (10 x 1000 µs) PPPM (8 x 20 µs) PD at TA = 50 °C IFSM TJ max. 5.0 V to 28 V 600 W 4000 W 4W 50 A 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation Peak pulse current with 10/1000 µs waveform (1)(2) with 8/20 µs waveform with 10/1000 µs waveform with 8/20 µs waveform (1)(2) SYMBOL PPPM IPPM PD IFSM TJ, TSTG VALUE 600 4000 See next table 4.0 50 - 55 to + 150 UNIT W A W A °C Power dissipation on infinite heatsink, TA = 50 °C Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 °C per Fig. 2. (2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal Document Number: 89115 Revision: 30-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS SYMBOL VWM VBR VC ID IPP αT VF RD PARAMETER Stand-off voltage Breakdown voltage Clamping voltage Leakage current at VWM Peak pulse current Voltage temperature coefficient Forward voltage drop Dynamic resistance IPP VBR VC ID VF IT VWM IF I V ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE DEVICE MARKING CODE 6AE 6AG 6AK 6AP 6AR 6AT 6AX 6AZ 6BE 6BG 6BM 6BP 6BR 6BT 6BV 6BX 6BZ 6CE 6CG BREAKDOWN VOLTAGE VBR AT IT (1) MIN. V SMA6J5.0A SMA6J6.0A SMA6J6.5A SMA6J7.5A SMA6J8.0A SMA6J8.5A SMA6J10A SMA6J11A SMA6J12A SMA6J13A SMA6J15A SMA6J16A SMA6J17A SMA6J18A SMA6J20A SMA6J22A SMA6J24A SMA6J26A SMA6J28A Notes: (1) Pulse test: tp ≤ 50 ms (2) To calculate maximum clamping voltage at other surge currents, use the following formula VCLmax. = RD x IPP + VBRmax. (3) To calculate VBR vs. junction temperature, use the following formula VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) (4) VF = 3.5 V at IF = 25 A, pulse test: 300 µs pulse width 6.40 6.70 7.20 8.33 8.89 9.4 11.1 12.2 13.3 14.4 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 7.07 7.41 7.96 9.21 9.83 10.4 12.3 13.5 14.7 15.9 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 MAX. mA 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 150 600 100 50 20 20 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 MAXIMUM REVERSE LEAKAGE ID AT VWM 25 °C 85 °C µA 375 1500 250 125 50 50 1 1 1 1 1 1 1 1 1 1 1 1 1 V 5.0 6.0 6.5 7.5 8.0 8.5 10 11 12 13 15 16 17 18 20 22 24 26 28 VC AT IPP 10/1000 µs MAX. V 9.1 9.5 10.2 11.8 12.5 13.3 15.7 17.2 18.8 20.4 23.6 25.2 26.7 28.3 31.4 34.5 37.8 40.9 44.0 A 65.9 63.2 58.8 50.8 48.0 45.1 38.2 34.8 31.9 29.4 25.4 23.8 22.5 21.2 19.1 17.4 15.9 14.7 13.6 Ω 0.031 0.033 0.038 0.051 0.056 0.064 0.089 0.107 0.128 0.153 0.201 0.229 0.259 0.292 0.361 0.437 0.523 0.614 0.704 MAX. V 13.4 13.7 14.5 17.0 18.2 18.7 19.6 21.5 23.5 23.9 27.7 29.5 31.4 33.2 36.8 40.4 44.3 47.9 51.6 A 298 290 276 235 220 205 184 172 157 147 123 119 111 102 93 89 80 75 68 Ω 0.021 0.022 0.024 0.033 0.038 0.040 0.040 0.047 0.056 0.054 0.075 0.083 0.094 0.109 0.132 0.152 0.185 0.213 0.253 RD (2) VC AT IPP 8/20 µs MAX. 10-4/°C 5.7 5.9 6.1 6.5 7.0 7.3 7.8 8.1 8.3 8.4 8.8 8.8 9.0 9.2 9.4 9.5 9.6 9.7 9.8 RD (2) αT (3) www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89115 Revision: 30-Oct-08 New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient Typical thermal resistance, junction to lead Note: (1) Mounted on minimum recommended pad layout (1) SYMBOL RθJA RθJL VALUE 120 25 UNIT °C/W °C/W ORDERING INFORMATION (Example) PREFERRED P/N SMA6J5.0A-E3/61 SMA6J5.0A-E3/5A UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61 5A BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) IPPM - Peak Pulse Current (%) IRSM 100 150 tr = 10 µs tr = 8 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 td = 1000 µs td = 20 µs td 0 1 10 100 1000 10 000 0 1.0 2.0 3.0 4.0 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM PPPM - Peak Pulse Power (kW) 10 1 0.1 0.1 Pulse Width (µs) - ½ IPP Exponential Waveform Figure 1. Peak Pulse Power Rating Curve t - Time (ms) Figure 3. Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 100 10 000 CJ - Junction Capacitance (pF) Measured at Zero Bias 75 1000 Measured at Stand-off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 10 100 50 25 0 0 25 50 75 100 125 150 175 200 TJ - Initial Temperature Figure 2. Pulse Power or Current vs. Initial Junction Temperature Reverse Voltage (V) Figure 4. Typical Junction Capacitance Document Number: 89115 Revision: 30-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor CJ - Junction Capacitance (pF) SMA6J5.0A ~ SMA6J8.0A TA = 150 °C 10 Transient Thermal Impedance (°C/W) 100 1000 100 1 SMA6J8.5A ~ SMA6J28A TA = 150 °C 10 0.1 SMA6J5.0A ~ SMA6J28A TA = 25 °C 1 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.1 0.001 0.01 0.1 1 10 100 1000 Reverse Voltage (V) Figure 5. Typical Forward Characteristics t - Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89115 Revision: 30-Oct-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1