SUP/SUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.004 @ VGS = 10 V
ID (A)
85 a
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View Ordering Information SUP85N04-04 SUP85N04-04—E3 (Lead (Pb)-Free) DS S Ordering Information SUB85N04-04 SUB85N04-04—E3 (Lead (Pb)-Free) N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
40 20 85a 85a 240 70 211 250c 3.75 −55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d Junction-to-Ambient J ti t A bi t Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71125 S-41261—Rev. C, 05-Jul-04 www.vishay.com Free Air (TO-220AB) RthJA RthJC
Symbol
Limit
40 62.5 0.6
Unit
_C/W
1
SUP/SUB85N04-04
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VDS = 15 V, ID = 30 A 30 120 0.0031 0.004 0.0055 0.007 S W 40 2 4 100 1 50 250 A mA V nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.47 W V, .47 ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W VDS = 30 V, VGS = 10 V, ID = 85 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 7620 1325 710 160 40 55 20 115 75 85 35 175 115 130 ns 250 nC pF
Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 85 A, VGS = 0 V IF = 85 A, di/dt = 100 A/ms 85 A 1.1 60 2.6 0.08 85 240 1.4 90 4 0.15 A V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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Document Number: 71125 S-41261—Rev. C, 05-Jul-04
SUP/SUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 thru 7 V 200 I D − Drain Current (A) 6V I D − Drain Current (A) 200 250
Transfer Characteristics
150
150
100
100 TC = 125_C 50 25_C
50
5V 4V
−55_C 4 5 6 7
0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V)
0 0 1 2 3 VGS − Gate-to-Source Voltage (V)
Transconductance
250 TC = −55_C 25_C 125_C r DS(on) − On-Resistance ( W ) 200 g fs − Transconductance (S) 0.004 0.005
On-Resistance vs. Drain Current
VGS = 10 V 0.003
150
100
0.002
50
0.001
0 0 20 40 60 80 100 120
0.000 0 20 40 60 80 100 120
ID − Drain Current (A)
ID − Drain Current (A)
12000 10000 C − Capacitance (pF) 8000 6000 4000 Coss 2000 0 0 Crss 8
Capacitance
20 VDS = 30 V ID = 85 A
Gate Charge
V GS − Gate-to-Source Voltage (V)
16
Ciss
12
8
4
0 16 24 32 40 0 60 120 180 240 300 VDS − Drain-to-Source Voltage (V) Qg − Total Gate Charge (nC) www.vishay.com
Document Number: 71125 S-41261—Rev. C, 05-Jul-04
3
SUP/SUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
100 VGS = 10 V ID = 30 A I S − Source Current (A)
Source-Drain Diode Forward Voltage
1.6 rDS(on) − On-Resiistance (Normalized)
1.2
10
TJ = 150_C
0.8
0.4
TJ = 25_C 0.0 −50 −25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2
TJ − Junction Temperature (_C)
VSD − Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
55
100 I Dav (a)
51 V (BR)DSS (V) IAV (A) @ TA = 25_C
ID = 250 mA
47
10 IAV (A) @ TA = 150_C 1
43
39
0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec)
35 −50
−25
0
25
50
75
100
125
150
175
TJ − Junction Temperature (_C)
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Document Number: 71125 S-41261—Rev. C, 05-Jul-04
SUP/SUB85N04-04
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
100 1000
Safe Operating Area
80 I D − Drain Current (A) I D − Drain Current (A)
10 ms 100 Limited by rDS(on) 100 ms 1 ms 10 ms 100 ms dc
60
10
40
20
1
TC = 25_C Single Pulse
0 0 25 50 75 100 125 150 175 TC − Ambient Temperature (_C)
0.1 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
0.01 10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71125 S-41261—Rev. C, 05-Jul-04
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