SUD17N25-165-E3

New Product SUD17N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 250 rDS(on) (Ω) 0.165 at VGS = 10 V ID (A) 17 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD17N25-165-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 250 ± 20 17 9.8 20 17 5 1.25 136b 3a - 55 to 175 mJ W °C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 °C/W Unit Document Number: 72851 S-71660-Rev. B, 06-Aug-07 www.vishay.com 1 New Product SUD17N25-165 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg c Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 250 V, VGS = 0 V, TJ = 125 °C VDS = 250 V, VGS = 0 V, TJ = 175 °C VDS = 15 V, VGS = 10 V VGS = 10 V, ID = 14 A VGS = 10 V, ID = 14 A, TJ = 125 °C VGS = 10 V, ID = 14 A, TJ = 175 °C VDS = 15 V, ID = 17 A Min 250 2.5 Typa Max Unit 4.0 ± 100 1 50 250 V nA µA A On-State Drain Current 17 0.131 0.165 0.347 0.462 36 Drain-Source On-State Resistanceb Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Pulsed Current Diode Forward Voltage b Ω S 1950 VGS = 0 V, VDS = 25 V, f = 1 MHz 160 70 30 VDS = 125 V, VGS = 10 V, ID = 17 A 10 10 1.6 15 VDD = 125 V, RL = 7.35 Ω ID ≅ 17 A, VGEN = 10 V, Rg = 2.5 Ω 130 30 100 25 195 45 150 20 IF = 17 A, VGS = 0 V IF = 17 A, di/dt = 100 A/µs 0.9 115 1.5 175 A V ns ns Ω 42 nC pF Qgs Qgd Rg td(on) tr td(off) tf ISM VSD trr Timec Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Source-Drain Reverse Recovery Time Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72851 S-71660-Rev. B, 06-Aug-07 New Product SUD17N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 20 VGS = 10 thru 6 V 16 5V I D - Drain Current (A) I D - Drain Current (A) 12 12 20 16 8 8 TC = 125 °C 4 25 °C - 55 °C 0 4 4V 0 0 4 8 12 16 20 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 60 TC = - 55 °C 50 25 °C 40 125 °C 30 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0 4 8 12 16 20 0 4 0.32 Transfer Characteristics VGS = 10 V 20 10 0 8 12 16 20 ID - Drain Current (A) ID - Drain Current (A) Transconductance 2800 20 On-Resistance vs. Drain Current V GS - Gate-to-Source Voltage (V) 16 C - Capacitance (pF) 2100 VDS = 125 V ID = 17 A Ciss 12 1400 8 700 Crss Coss 0 0 40 80 120 160 200 4 0 0 8 16 24 32 40 48 56 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 72851 S-71660-Rev. B, 06-Aug-07 Gate Charge www.vishay.com 3 New Product SUD17N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2.8 2.4 rDS(on) - On-Resistance (Normalized) VGS = 10 V ID = 17 A I S - Source Current (A) 100 2.0 TJ = 150 °C 10 1.6 1.2 TJ = 25 °C 0.8 0.4 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 1 0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 1.2 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 20 100 16 I D - Drain Current (A) I D - Drain Current (A) 10 Limited by rDS(on) 10 µs 12 100 µs 8 1 TC = 25 °C Single Pulse 1 ms 10 ms 100 ms, dc 4 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 100 1 10 VDS - Drain-to-Source Voltage (V) 1000 Maximum Avalanche Drain Current vs. Case Temperature 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Safe Operating Area 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72851. www.vishay.com 4 Document Number: 72851 S-71660-Rev. B, 06-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1