T85HFL60S05

T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved D-55 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. These single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. Application includes self-commutated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications. PRODUCT SUMMARY IF(AV) Type 40 A/70 A/85 A Modules - Diode, Fast MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IF(RMS) 50 Hz IFSM 60 Hz 50 Hz 60 Hz VRRM trr TJ Range Range Range CHARACTERISTICS T40HFL 40 63 475 500 1130 1030 T70HFL 70 110 830 870 3460 3160 100 to 1000 200 to 1000 - 40 to 125 T85HFL 85 133 1300 A 1370 8550 7810 V ns °C A2s UNITS A A I2t Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 10 20 T40HFL.. T70HFL.. T85HFL.. 40 60 80 100 trr CODE S02, S05, S10 S02, S05, S10 S02, S05, S10 S02, S05, S10 S05, S10 S05, S10 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 100 200 400 600 800 1000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 150 300 500 100 700 900 1100 IRRM MAXIMUM AT TJ = 25 °C μA Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) TEST CONDITIONS 180° conduction, half sine wave 70 IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2√t VF(TO)1 VF(TO)2 rf1 rf2 VFM 100 % VRRM reapplied 800 730 11 300 0.82 0.84 7.0 6.8 1.60 2450 2230 34 600 0.87 0.90 2.77 2.67 1.73 6050 5520 85 500 0.84 V TJ = 25 °C, (I > π x IF(AV)) TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) TJ = 25 °C, (I > π x IF(AV)) IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 0.86 2.15 mΩ 2.07 1.55 V A2√s 100 % VRRM reapplied No voltage reapplied 400 Sinusoidal half wave, initial TJ = TJ maximum 420 1130 1030 700 730 3460 3160 1100 1150 8550 7810 A2s No voltage reapplied 63 475 500 110 830 870 133 1300 1370 A °C A T40HFL 40 T70HFL 70 T85HFL 85 UNITS A t = 0.1 ms to 10 ms, no voltage reapplied TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A REVERSE RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS (1) TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V T40HFL S02 70 200 0.25 0.55 S05 110 500 0.4 2.0 S10 270 1000 1.35 8.0 S02 70 200 0.25 0.6 T70HFL S05 110 500 0.4 2.1 S10 270 1000 1.35 8.5 S02 80 200 0.3 0.8 T85HFL S05 120 500 0.6 3.5 S10 290 ns 1000 1.6 μC 1.5 UNITS Vishay Semiconductors Maximum reverse recovery time trr Maximum reverse recovery charge Qrr Note (1) Tested on LEM 300 A diodemeter tester BLOCKING PARAMETER Maximum peak reverse leakage current RMS isolation voltage SYMBOL IRRM VISOL TEST CONDITIONS TJ = 125 °C 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s T40HFL T70HFL T85HFL 20 3500 UNITS mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating temperature range Storage temperature range Maximum internal thermal resistance, junction to case per module Thermal resistance, case to heatsink per module base to heatsink Mounting torque ± 10 % busbar to terminal Approximate weight Case style SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, flat, smooth and greased M3.5 mounting screws (1) Non-lubricated threads M5 screws terminals Non-lubricated threads See dimensions link at the end of datasheet 0.85 TEST CONDITIONS T40HFL T70HFL T85HFL - 40 to 125 - 40 to 150 0.53 0.2 1.3 ± 10 % Nm 3 ± 10 % 54 19 D-55 (T-module) g oz. 0.46 K/W UNITS °C Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound ΔR CONDUCTION DEVICES T40HFL T70HFL T85HFL SINUSOIDAL CONDUCTION AT TJ MAXIMUM 180° 0.06 0.05 0.04 120° 0.08 0.06 0.05 90° 0.10 0.08 0.06 60° 0.14 0.11 0.09 30° 0.24 0.19 0.15 RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 0.05 0.04 0.03 120° 0.08 0.06 0.05 90° 0.10 0.08 0.07 60° 0.15 0.12 0.09 30° 0.24 0.19 0.015 K/W UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Maximum Allowab le Case T emperature (°C) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Maximum Allowa ble Cas T e emperature (°C) 130 120 110 100 Conduction Period 130 120 110 100 90 80 70 60 50 0 10 T 40HF S L.. eries R thJC (DC) = 0.85 K/ W T 70HFL.. S eries RthJC (DC) = 0.53 K/ W Conduc tion Angle 90 80 30° 70 60 50 0 20 40 60 80 100 120 Average Forward Current (A) 60° 90° 120° 180° DC 30° 60° 90° 120° 180° 20 30 40 50 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Allowa ble Case T emperature (°C) Maximum Allowable Case T emperature (°C) 130 120 110 100 Conduc tion Period 130 120 110 100 90 80 T 40HF S L.. eries R thJC (DC) = 0.85 K/ W T 85HF S L.. eries R thJC (DC) = 0.46 K/ W Conduc tion Angle 90 80 30° 70 60 50 0 10 20 30 40 50 60 70 Average F orward Current (A) 60° 90° 120° 180° DC 30° 70 60 50 0 10 20 30 40 60° 90° 120° 180° 50 60 70 80 90 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics Maximum Allowable Case T emp erature (°C) 120 110 100 90 80 70 60 50 0 10 T 70HFL.. S eries R thJC (DC) = 0.53 K/ W Maximum Allowable Case T emperature (°C) 130 130 120 110 100 Conduction Period T 85HF S L.. eries R thJC (DC) = 0.46 K/ W Conduction Angle 90 80 30° 70 60 50 0 20 40 60 80 100 120 140 Average Forward Current (A) 60° 90° 120° 180° DC 30° 60° 90° 120° 180° 20 30 40 50 60 70 80 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Maximum Average F orward Power Lo ss (W) Maximum Average Forward Power Los (W) s Vishay Semiconductors 70 60 50 40 30 20 10 0 0 5 180° 120° 90° 60° 30° RMSLimit 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Average F orward Current (A) RMS Limit Conduc tion Period DC 180° 120° 90° 60° 30° Conduc tion Angle T 40HF S L.. eries TJ= 125°C 10 15 20 25 30 35 40 T 70HF S L.. eries TJ = 125°C Average F orward Current (A) Fig. 7 - Forward Power Loss Characteristics Fig. 10 - Forward Power Loss Characteristics Ma ximum Average F orward Power Lo s (W) s 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 Average F orward Current (A) Conduc tion Period Maximum Average Forward Power Loss (W) 110 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 Average Forward Current (A) T 85HFL.. S eries TJ= 125°C Conduc tion Angle DC 180° 120° 90° 60° 30° RMS Limit 180° 120° 90° 60° 30° RMS Limit T 40HF S L.. eries T J = 125°C Fig. 8 - Forward Power Loss Characteristics Fig. 11 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 100 90 80 70 60 50 40 30 20 10 0 0 10 180° 120° 90° 60° 30° RMS Limit 160 140 120 100 80 RMSLimit 60 Conduc tion Period DC 180° 120° 90° 60° 30° Conduc tion Angle 40 20 0 0 20 40 60 80 100 120 140 Average F orward Current (A) T 85HFL.. S eries TJ = 125°C T 70HF S L.. eries T = 125°C J 20 30 40 50 60 70 Average Forward Current (A) Fig. 9 - Forward Power Loss Characteristics Fig. 12 - Forward Power Loss Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Peak Half S ine Wave F orwa rd Current (A) 450 400 350 300 250 200 150 100 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Peak Half S Wave Forward Current (A) ine 850 750 650 550 450 350 250 150 0.01 T 70HF S L.. eries Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial T J= 125°C No Voltage Reapplied Rated V RRM Reapplied At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following S urge. Initial T J 125°C = @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s T 40HFL.. S eries 0.1 Pulse T rain Duration (s) 1 Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 16 - Maximum Non-Repetitive Surge Current Peak Half S ine Wave F orwa rd Current (A) 450 400 350 300 250 200 150 100 0.01 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial TJ = 125°C No Voltage Reapplied R ated VRRM Reapplied Peak Half S Wave Forward Current (A) ine 500 1200 1100 1000 900 800 700 600 500 400 300 1 At Any Rated Load Condition And With Rated V RRM Ap p lied Following Surge. Initial T J 125°C = @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s T 40HF S L.. eries T 85HFL.. S eries 0.1 Pulse T rain Duration (s) 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current Peak Half S Wave Forward Current (A) ine Peak Half S Wave Forward Current (A) ine 800 700 600 500 400 300 200 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1300 1200 1100 1000 900 800 700 600 500 400 300 0.01 At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial T = 125°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Ma ximum Non Rep etitive S urge Current Versus Pulse T rain Dura tion. Initial T = 125°C J No Voltage Reapplied Rated V RRM Reapplied T 70HF S L.. eries T 85HFL.. S eries 0.1 Pulse T rain Duration (s) 1 Fig. 15 - Maximum Non-Repetitive Surge Current Fig. 18 - Maximum Non-Repetitive Surge Current www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Maximum Reverse Rec overy T ime - T (µs) rr Vishay Semiconductors 0.5 I FM= 300A Maximum R everse Rec overy T ime - T (µs rr ) 0.51 1.1 1 I FM 300A = 0.49 0.48 0.47 0.46 0.45 10 T 40HFL..S 02 T 70HFL..S 02 TJ = 125 °C 220A 172A 100A 50A 0.9 220A 172A 0.8 100A 50A 0.7 T 40HFL..S 05 T 70HFL..S 05 TJ = 125 °C 100 100 0.6 10 Ra te Of F ll Of F a orwa rd Current - di/ d t (A/ µs) Ra te Of Fa ll Of Fo rwa rd Current - di/ dt (A/ µs) Fig. 19 - Recovery Time Characteristics Fig. 22 - Recovery Time Characteristics Maximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse R overy Charge - Qrr (µC) ec 8 7 6 5 4 3 2 I FM= 300A 220A 172A 100A 50A 20 18 16 14 12 10 8 6 T 40HFL..S 05 T 70HFL..S 05 TJ = 125 °C I FM= 300A 220A 172A 100A 50A T 40HFL..S 02 T 70HFL..S 02 TJ = 125 °C 1 10 20 30 40 50 60 70 80 90 100 4 10 20 30 40 50 60 70 80 90 100 R te Of F ll Of Forward Current - d i/ d t (A/ µs) a a Ra te Of F ll Of Forward Current - di/ d t (A/ µs) a Fig. 20 - Recovery Charge Characteristics Fig. 23 - Recovery Charge Characteristics Maximum R verse R overy Current - Irr (A) e ec 18 16 14 12 10 8 6 I FM 300A = 220A 172A 100A 50A Maximum Reverse Rec overy Current - Irr (A) 20 28 26 24 22 20 18 16 14 12 10 8 T 40HFL..S 05 T 70HFL..S 05 TJ = 125 °C I FM 300A = 220A 172A 100A 50A T 40HFL..S 02 T 70HFL..S 02 TJ = 125 °C 4 10 20 30 40 50 60 70 80 90 100 6 10 20 30 40 50 60 70 80 90 100 R te Of F ll Of Forward Current - d i/ d t (A/ µs) a a R te Of F ll Of Forward Current - d i/ d t (A/ µs) a a Fig. 21 - Recovery Current Characteristics Fig. 24 - Recovery Current Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Maximum Reverse R overy T ec ime - T (µs) rr 1.8 1.7 I FM= 300A Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Maximum Reverse R ecovery T ime - T (µs) rr 1.2 1.1 1 I = 300A FM 1.6 200A 1.5 100A 1.4 50A 0.9 0.8 0.7 0.6 10 T 85HF 02 L..S T J = 125°C 200A 100A 50A 1.3 1.2 1.1 1 10 T 40HFL..S 10 T 70HFL..S 10 TJ = 125 °C 100 100 Ra te Of F ll Of Forwa rd Current - d i/ d t (A/ µs) a Ra te Of F ll Of F a orwa rd Current - di/ dt (A/ µs) Fig. 25 - Recovery Time Characteristics Fig. 28 - Recovery Time Characteristics Maximum R everse R covery Charge - Qrr (µC) e 35 30 I FM= 300A 200A 100A Maximum R everse R overy Charge - Qrr (µC) ec 40 25 IFM = 300A 20 200A 100A 25 20 15 10 T 40HFL..S 10 T 70HFL..S 10 TJ = 125 °C 50A 15 50A 10 T 85HF 02 L..S TJ = 125 °C 5 10 20 30 40 50 60 70 80 90 100 5 10 20 30 40 50 60 70 80 90 100 R te Of F ll Of Forward Current - d i/ d t (A/ µs) a a Rate Of F Of Forward Current - di/ dt (A/ µs) all Fig. 26 - Recovery Charge Characteristics Fig. 29 - Recovery Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) I FM= 300A 200A 100A Maximum Reverse R overy Current - Irr (A) ec 45 40 35 30 25 20 15 28 26 24 22 20 18 16 14 12 10 8 T 85HF 02 L..S TJ = 125°C IFM = 300A 200A 100A 50A 50A T 40HFL..S 10 T 70HFL..S 10 TJ = 125 °C 10 10 20 30 40 50 60 70 80 90 100 6 10 20 30 40 50 60 70 80 90 100 Ra te Of F ll Of Forwa rd Current - di/ d t (A/ µs) a Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) Fig. 27 - Recovery Current Characteristics Fig. 30 - Recovery Current Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Maximum Reverse Rec overy T ime - T (µs) rr Vishay Semiconductors 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 10 T 85HFL..S 10 TJ = 125°C 50A 100A IFM = 300A 200A 1.2 I = 300A FM 1.1 200A 1 100A 50A 0.9 T 85HFL..S 05 TJ = 125°C 0.8 10 100 Maximum R everse Rec overy T ime - T (µs) rr 1.3 100 R te Of Fall Of Forward Current - di/ d t (A/ µs) a R te Of Fa ll Of F a orward Current - di/ dt (A/ µs) Fig. 31 - Recovery Time Characteristics Fig. 34 - Recovery Time Characteristics Maximum R everse R ecovery Charge - Qrr (µC) I M = 300A F Maximum R everse Rec overy Charge - Qrr (µC) 30 27 200A 55 50 45 40 35 30 25 20 15 T 85HFL..S 10 TJ = 125°C 50A IFM = 300A 200A 100A 24 21 18 15 12 9 T 85HF 05 L..S TJ = 125°C 100A 50A 6 10 20 30 40 50 60 70 80 90 100 10 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) R te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) a Fig. 32 - Recovery Charge Characteristics Fig. 35 - Recovery Charge Characteristics Maximum Reverse R overy Current - Irr (A) ec I = 300A FM 200A Maximum R everse Rec overy Current - Irr (A) 35 60 55 50 45 40 35 30 25 20 T 85HFL..S 10 TJ = 125°C 50A IFM = 300A 200A 100A 30 100A 50A 25 20 15 T 85HF 05 L..S TJ = 125°C 10 10 20 30 40 50 60 70 80 90 100 15 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs) R ate Of Fall Of Forwa rd Current - d i/ dt (A/µs) Fig. 33 - Recovery Current Characteristics Fig. 36 - Recovery Current Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 9 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors 1E4 T 40HF S L.. eries T rapezoidal Pulse T C = 70 °C Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Peak Forward Current (A) tp 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz tp T 40HFL.. S eries S inusoidal Pulse T = 70°C C 1E1 1E 1 1E2 1E3 1E 1E1 1E4 4 1E1 1E 2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 37 - Frequency Characteristics 1E4 T 40HFL.. T rapezoidal Pulse TC= 90 °C tp Peak Forward Current (A) 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz tp T 40HFL.. S eries S inusoidal Pulse TC= 90°C 1E1 1E1 1E2 1E3 1E1 1E4 E1 1E 4 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 38 - Frequency Characteristics 1E 4 20 joules per pulse Peak Forward Current (A) 1E 3 0.1 0.04 0.02 0.01 0.2 0.4 1 2 4 10 2 4 10 20 joules per pulse 0.4 0.04 0.02 0.01 0.2 0.1 1 1E 2 1E 1 tp T 40HFL.. S eries S inusoid al Pulse TJ = 125 °C tp T 40HFL.. S eries T rapezoidal Pulse TJ= 125°C di/ dt = 50A/ µs 1E 0 1E 1 1E2 1E3 1E 1E1 1E 41E1 4 1E 2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 39 - Maximum Forward Energy Power Loss Characteristics www.vishay.com 10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 1E4 Vishay Semiconductors Peak Forward Current (A) 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 1E2 T 70HFL.. S eries S inusoid a l Pulse TC= 70°C 5000 2500 1500 1000 400 200 50 Hz tp tp T 70HFL.. S eries T rapezoidal Pulse TC= 70°C 1E1 1E1 1E2 1E3 1 1E4 1E1 1E4 1E 1E 2 1E 3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 40 - Frequency Characteristics 1E4 Peak F orward Current (A) 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz tp T 70HFL.. S eries S inusoidal Pulse TC= 90°C tp T 70HFL.. S eries T rapezoidal Pulse TC= 90°C 1E1 1E 1 1E2 1E 3 1E4 41E1 1E 1E1 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 41 - Frequency Characteristics 1E4 20 joules per pulse 10 1 0.4 0.1 0.04 0.2 2 4 20 joules per pulse 10 Peak Forward Current (A) 4 1E3 0.1 0.04 0.02 0.01 0.4 0.2 1 2 0.02 0.01 1E2 1E1 tp T 70HFL.. S eries S inusoidal Pulse TJ = 125°C tp T 70HFL.. S eries T rapezoidal pulse T J= 125°C di/ dt = 50A/ µs 1E0 1E1 1E2 1E3 1E 1E1 1E4 41E 1 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 42 - Maximum Forward Energy Power Loss Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 11 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors 1E4 Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Peak Forward Current (A) 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz 1E2 T 85HFL.. S eries S inusoidal Pulse TC= 70°C tp T 85HFL.. S eries T rapezoidal Pulse T C 70°C = tp 1E1 1E1 1E2 1E 3 1E4 41E1 1 1E 1E 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 43 - Frequency Characteristics 1E4 Peak Forward Current (A) 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 1E2 T 85HFL.. S eries S inusoidal Pulse TC= 90°C 5000 2500 1500 1000 400 200 50 Hz tp tp T 85HFL.. S eries T rapezoidal Pulse T C 90°C = 1E1 1E1 1E2 1E3 1E4 1E 1 1E4 1E1 1E 2 1E 3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 44 - Frequency Characteristics 1E 4 20 joules per pulse 10 4 20 joules per pulse 4 2 0.4 0.2 0.1 0.04 0.02 0.01 1 10 Peak Forward Current (A) 1E 3 1E 2 1 0.4 0.2 0.1 0.04 0.02 0.01 2 1E 1 tp T 85HFL.. S eries S inusoidal Pulse TJ= 125 °C tp T 85HFL.. S eries T rapezoid al Pulse T J= 125°C di/dt = 50A/ µs 1E 0 1E 1 1E 2 1E3 1E4 1E1 1E4 1E1 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 45 - Maximum Forward Energy Power Loss Characteristics www.vishay.com 12 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 1000 Instantaneous F orward Current (A) Vishay Semiconductors 10000 Instanta neous F orwa rd Current (A) 1000 100 TJ= 25°C 10 TJ= 125°C 100 TJ= 25°C 10 TJ= 125°C T 40HF S L.. eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 T 70HFL.. S eries 1 0 1 2 3 4 5 6 7 Instantaneous F orward Voltage (V) Instantaneous F orward Voltage (V) Fig. 46 - Forward Voltage Drop Characteristics Fig. 47 - Forward Voltage Drop Characteristics 10000 Instantaneous Forward Current (A) 1000 TJ= 25°C 100 TJ= 125°C T 85HF S L.. eries 10 0 1 2 3 4 5 6 7 Instantaneous F orward Voltage (V) Fig. 48 - Forward Voltage Drop Characteristics T ransient T hermal Impedanc e ZthJC (K/ W) 1 S teady S tate Value: R thJC = 0.85 K/ W R thJC = 0.53 K/ W R thJC = 0.46 K/ W (DC Operation) T 40HF S L.. eries T 70HF S L.. eries T 85HF S L.. eries 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 S quare Wave Pulse Duration (s) Fig. 49 - Thermal Impedance ZthJC Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 13 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A T 1 1 2 3 4 5 - 40 2 HFL 3 100 4 S10 5 Module type Current rating Fast recovery diode Voltage code x 10 = VRRM trr code 40 = 40 A (average) 70 = 70 A (average) 85 = 85 A (average) S02 = 200 ns S05 = 500 ns S10 = 1000 ns CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE N/A CIRCUIT DRAWING Single switch diode + - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95313 www.vishay.com 14 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93184 Revision: 19-May-10 Outline Dimensions Vishay Semiconductors D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 25 ± 1 23.5 (0.93) 3 (0.12) 41 (1.61) MAX. 11 (0.43) 18 (0.71) + 27 (1.06) 15 (0.59) 3.9 (0.15) 8 (0.31) - M5 30 (1.18) Document Number: 95313 Revision: 01-Jul-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1