TLDR440_04

VISHAY TLDR440. Vishay Semiconductors High Intensity LED, ∅ 3 mm Tinted Diffused Description This LED contains the double heterojunction (DH) GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current. It can be DC or pulse driven to achieve desired light output. The device is available in a 3 mm tinted diffused package. 19220 Features • Exceptional brightness • • • • • • • • Very high intensity even at low drive currents Wide viewing angle Low forward voltage 3 mm (T-1) tinted diffused package Deep red color Categorized for luminous intensity Outstanding material efficiency Lead-free device e3 Pb Pb-free Applications Bright ambient lighting conditions Battery powered equipment Indoor and outdoor information displays Portable equipment Telecommunication indicators General use Parts Table Part TLDR4400 TLDR4401 Color, Luminous Intensity Red,IV > 25 mcd Red, IV = (25 to 50) mcd Angle of Half Intensity (±ϕ) 40 ° 40 ° Technology GaAIAs on GaAs GaAIAs on GaAs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLDR440. Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t ≤ 5 s, 2 mm from body Tamb ≤ 60 °C tp ≤ 10 µs Tamb ≤ 60 °C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 50 1 100 100 - 40 to + 100 - 55 to + 100 260 400 Unit V mA A mW °C °C °C °C K/W Document Number 83001 Rev. 1.4, 30-Aug-04 www.vishay.com 1 TLDR440. Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified VISHAY Red TLDR440. Parameter Luminous intensity Luminous intensity Dominant wavelength Peak wavelength Spectral line half width Angle of half intensity Forward voltage Reverse current Junction capacitance 1) 1) Test condition IF = 20 mA I F = 1 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA VR = 6 V VR = 0, f = 1 MHz Part TLDR4400 TLDR4401 Symbol IV IV IV λd λp ∆λ ϕ VF IR Cj Min 25 25 Typ. 45 Max 50 Unit mcd mcd mcd nm nm nm deg 2 648 650 20 ± 40 1.8 30 2.2 10 V µA pF in one Packing Unit IVmin/IVmax ≤ 0.5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 60 125 P - Power Dissipation ( mW ) V I F - Forward Current ( mA ) 50 40 30 20 10 0 100 75 50 25 0 0 20 40 60 80 100 95 10095 0 20 40 60 80 100 95 10904 Tamb - Ambient Temperature ( °C ) Tamb - Ambient Temperature ( ° C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com 2 Document Number 83001 Rev. 1.4, 30-Aug-04 VISHAY TLDR440. Vishay Semiconductors 2.0 Tamb ≤ 65 ° C ı I v rel - Relative Luminous Intensity 10000 Red 1.6 1.2 0.8 0.4 0 IF - Forward Current ( mA ) 1000 t p /T= 0.01 0.02 0.05 100 1 10 0.5 0.2 0.1 1 0.01 95 10047 0.1 1 10 100 95 10015 0 20 40 60 80 100 t p - Pulse Length ( ms ) Tamb - Ambient Temperature ( ° C ) Figure 3. Forward Current vs. Pulse Length Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 0° I v rel - Relative Luminous Intensity 10 ° 20 ° I v rel - Relative Luminous Intensity 30 ° 2.4 Red 2.0 1.6 1.2 0.8 0.4 I FAV = 10 mA, const. 0 10 95 10262 1.0 0.9 0.8 0.7 0.6 40 ° 50 ° 60 ° 70 ° 80 ° 0.6 0.4 0.2 0 0.2 0.4 20 0.5 50 0.2 100 0.1 200 0.05 500 I F (mA) 95 10020 1 0.02 t p /T Figure 4. Rel. Luminous Intensity vs. Angular Displacement Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Red I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 100 10 Red 1 10 0.1 1 1 95 10014 1.5 2 2.5 3 0.01 0.1 95 10016 1 10 100 V F - Forward Voltage ( V ) I F - Forward Current ( mA ) Figure 5. Figure 8. Relative Luminous Intensity vs. Forward Current Document Number 83001 Rev. 1.4, 30-Aug-04 www.vishay.com 3 TLDR440. Vishay Semiconductors 1.2 I v rel - Relative Luminous Intensity VISHAY Red 1.0 0.8 0.6 0.4 0.2 0 600 620 640 660 680 700 95 10018 λ - Wavelength ( nm ) Figure 9. Relative Intensity vs. Wavelength Package Dimensions in mm 95 10951 www.vishay.com 4 Document Number 83001 Rev. 1.4, 30-Aug-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. TLDR440. Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83001 Rev. 1.4, 30-Aug-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1