TLMS32S2U1-GS18

TLM.32. Vishay Semiconductors Power SMD LED PLCC-4 FEATURES • Available in 8 mm tape • Luminous intensity and color categorized per packing unit e3 • Luminous intensity ratio per packing unit IVmax/IVmin ≤ 1.6 • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Suitable for all soldering methods according to CECC 00802 and J-STD-020C • Preconditioning: acc. to JEDEC level 2a • Lead (Pb)-free device • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Interior and exterior lighting • Indicator and backlighting purposes for audio, video, LCDs, switches, symbols, illuminated advertising etc. • Illumination purpose, alternative to incandescent lamps • General use 19210 DESCRIPTION The TLM.32. is an advanced development in terms of heat dissipation. The leadframe profile of this PLCC-4 SMD package is optimized to reduce the thermal resistance. This allows higher drive current and doubles the light output compared to Vishay’s high intensity SMD LED in PLCC-2 package. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-4 • Product series: power • Angle of half intensity: ± 60° PARTS TABLE PART TLMK32T2V1-GS18 TLMK32U2AA-GS18 TLMK32T2AA-GS18 TLMS32S2U1-GS18 TLMS32T1U2-GS18 TLMS32S2V1-GS18 TLMO32U2AA-GS18 TLMO32T2V1-GS18 TLMO32U1AA-GS18 TLMY32T2V1-GS18 TLMY32U2AA-GS18 TLMY32T2AA-GS18 COLOR, LUMINOUS INTENSITY Red, IV = (355 to 900) mcd Red, IV = (560 to 1400) mcd Red, IV = (355 to 1400) mcd Super red, IV = (224 to 560) mcd Super red, IV = (280 to 710) mcd Super red, IV = (224 to 900) mcd Soft orange, IV = (560 to 1400) mcd Soft orange, IV = (355 to 900) mcd Soft orange, IV = (450 to 1400) mcd Yellow, IV = (355 to 900) mcd Yellow, IV = (560 to 1400) mcd Yellow, IV = (355 to 1400) mcd TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs Document Number 81284 Rev. 1.0, 22-Feb-08 www.vishay.com 1 TLM.32. Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS 1) TLMK32., TLMS32., TLMO32., TLMY32. PARAMETER Reverse voltage 2) Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ambient mounted on PC board FR4 optional paddesign mounted on PC board FR4 recommended paddesign TEST CONDITION SYMBOL VR IF Ptot Tj Tamb Tstg RthJA RthJA VALUE 5 70 180 125 - 40 to + 100 - 40 to + 100 290 270 UNIT V mA mW °C °C °C K/W K/W Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMK32., RED PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current 3) 2) TEST CONDITION IF = 50 mA PART TLMK32T2V1 TLMK32U2AA TLMK32T2AA SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR MIN. 355 560 355 TYP. MAX. 900 1400 1400 UNIT mcd mcd mcd mlm/mcd nm nm nm deg 3 612 617 624 18 ± 60 1.85 2.1 0.01 2.55 10 624 IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V TLMK32.. V µA Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit I Vmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMS32., SUPER RED PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current 3) 2) TEST CONDITION IF = 50 mA PART TLMS32S2U1 TLMS32T1U2 TLMS32S2V1 SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR MIN. 224 280 224 TYP. MAX. 560 710 900 UNIT mcd mcd mcd mlm/mcd nm nm nm deg 3 626 630 641 17 ± 60 1.85 2.1 0.01 2.55 10 638 IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V V µA Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V www.vishay.com 2 Document Number 81284 Rev. 1.0, 22-Feb-08 TLM.32. Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMO32., SOFT ORANGE PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current 3) 2) TEST CONDITION IF = 50 mA PART TLMO32T2V1 TLMO32U2AA TLMO32U1AA SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR MIN. 355 560 450 TYP. MAX. 900 1400 1400 UNIT mcd mcd mcd mlm/mcd nm nm nm deg 3 600 605 611 17 ± 60 1.85 2.1 0.01 2.55 10 609 IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V V µA Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMY3214, YELLOW PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current 3) 2) TEST CONDITION IF = 50 mA PART TLMY32T2V1 TLMY32U2AA TLMY32T2AA SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR MIN. 355 560 355 TYP. MAX. 900 1400 1400 UNIT mcd mcd mcd mlm/mcd nm nm nm deg 3 580 588 590 18 ± 60 1.85 2.1 0.01 2.55 10 595 IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V V µA Note: 1) Tamb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V LUMINOUS INTENSITY CLASSIFICATION GROUP STANDARD S T U V A 1 2 1 2 1 2 1 2 A LIGHT INTENSITY (MCD) OPTIONAL MIN. 180 224 280 355 450 560 710 900 1120 MAX. 224 280 355 450 560 710 900 1120 1400 Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable. Document Number 81284 Rev. 1.0, 22-Feb-08 www.vishay.com 3 TLM.32. Vishay Semiconductors COLOR CLASSIFICATION YELLOW GROUP MIN. 1 2 3 4 5 6 581 583 585 587 589 591 MAX. 584 586 588 590 592 594 600 602 604 606 608 603 605 607 609 611 SOFT ORANGE MIN. MAX. DOM. WAVELENGTH (NM) CROSSING TABLE VISHAY TLMK32T2V1 TLMK32U2AA TLMK32T2AA TLMS32S2U1 TLMS32T1U2 TLMS32S2V1 TLMO32U2AA TLMY32T2V1 TLMY32U2AA TLMY32T2AA OSRAM LAE67BT2V1 LAE67BU2AA LAE67BT2AA LSE67AS2U1 LSE67AT1U2 LSE67AS2V1 LOE67BU2AA LYE67BT2V1 LYE67BU2AA LYE67BT2AA Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 100 90 100 90 80 70 60 50 40 30 20 10 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 17046 IF - Forward Current (mA) 70 60 50 40 30 20 10 0 0 25 50 75 100 Tamb - Ambient Temperature (°C) 125 270 K/W RthJA = 290 K/W I F - Forward Current (mA) 80 yellow soft orange red super red 18568 VF - Forward Voltage (V) Figure 1. Forward Current vs. Ambient Temperature Figure 3. Forward Current vs. Forward Voltage 0° 10° 20° 30° 1.2 IV rel - Relative Luminous Intensity IV rel - Relative Luminous Intensity red 1.0 0.8 0.6 0.4 0.2 0.0 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10319 570 16007 590 610 630 650 670 λ - Wavelength (nm) Figure 2. Rel. Luminous Intensity vs. Angular Displacement Figure 4. Relative Intensity vs. Wavelength www.vishay.com 4 Document Number 81284 Rev. 1.0, 22-Feb-08 TLM.32. Vishay Semiconductors VF - Change of Forward Voltage (mV) 250 IV rel - Relative Luminous Intensity 10 red 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100 10 mA 30 mA 50 mA red 1 0.1 0.01 1 17037 17034 Tamb - Ambient Temperature (°C) 10 IF - Forward Current (mA) 100 Figure 5. Change of Forward Voltage vs. Ambient Temperature Figure 8. Relative Luminous Intensity vs. Forward Current 2.5 IV rel - Relative Luminous Intensity red 2.0 1.5 1.0 0.5 0.0 - 50 17035 - Change of Dom. Wavelength (nm) 1.5 red 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5 - 25 0 25 50 75 100 17038 d Tamb - Ambient Temperature (°C) 10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA) Figure 6. Relative Luminous Intensity vs. Ambient Temperature Figure 9. Change of Dominant Wavelength vs. Forward Current - Change of Dom. Wavelength (nm) 6 red 4 2 0 -2 -4 -6 - 50 IV rel - Relative Luminous Intensity - 25 0 25 50 75 100 1.2 1.1 super red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 620 d 640 660 680 700 17036 Tamb - Ambient Temperature (°C) 17045 λ - Wavelength (nm) Figure 7. Change of Dominant Wavelength vs. Ambient Temperature Figure 10. Relative Intensity vs. Wavelength Document Number 81284 Rev. 1.0, 22-Feb-08 www.vishay.com 5 TLM.32. Vishay Semiconductors VF - Change of Forward Voltage (mV) 250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100 17042 10 super red 30 mA IV rel - Relative Luminous Intensity super red 1 50 mA 10 mA 0 0.01 1 10 IF - Forward Current (mA) 100 Tamb - Ambient Temperature (°C) 17039 Figure 11. Change of Forward Voltage vs. Ambient Temperature Figure 14. Relative Luminous Intensity vs. Forward Current Δ λ d - Change of Dom. W avelength (nm) 2.5 I Vrel - Relative Luminous Intensity super red 1.5 super red 2.0 1.5 1.0 0.5 0.0 - 50 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5 10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA) 17040 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 17043 Figure 12. Relative Luminous Intensity vs. Ambient Temperature Figure 15. Change of Dominant Wavelength vs. Forward Current Δ λ d - Change of Dom. Wavelength (nm) 3 2 1 0 -1 -2 -3 -4 -5 - 50 - 25 0 25 50 75 100 16314 1 .2 super red IV rel - Relative Luminous Itensity soft orange 1.0 0.8 0.6 0.4 0.2 0.0 560 580 600 620 640 660 17041 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) Figure 13. Change of Dominant Wavelength vs. Ambient Temperature Figure 16. Relative Intensity vs. Wavelength www.vishay.com 6 Document Number 81284 Rev. 1.0, 22-Feb-08 TLM.32. Vishay Semiconductors VF - Change of Forward Voltage (mV) 250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 17023 10 30 mA IV rel - Relative Luminous Intensity 50 mA soft orange 1 soft orange 10 mA 0.1 0.01 1 10 IF - Forward Current (mA) 100 17020 Figure 17. Change of Forward Voltage vs. Ambient Temperature Figure 20. Relative Luminous Intensity vs. Forward Current 2.5 IV rel - Relative Luminous Intensity soft orange 2.0 1.5 1.0 0.5 0.0 - 50 17021 - Change of Dom. Wavelength (nm) 1.5 soft orange 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) d 10 20 30 40 50 60 70 80 90 100 17024 IF - Forward Current (mA) Figure 18. Relative Luminous Intensity vs. Ambient Temperature Figure 21. Change of Dominant Wavelength vs. Forward Current - Change of Dom. Wavelength (nm) 6 IV rel - Relative Luminous Intensity soft orange 4 2 0 -2 -4 -6 - 50 1.2 yellow 1.0 0.8 0.6 0.4 0.2 0.0 540 16008 d - 25 0 25 50 75 100 560 580 600 620 640 17022 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) Figure 19. Change of Dominant Wavelength vs. Ambient Temperature Figure 22. Relative Intensity vs. Wavelength Document Number 81284 Rev. 1.0, 22-Feb-08 www.vishay.com 7 TLM.32. Vishay Semiconductors Δ VF - Change of Forward Voltage (mV) 250 IV rel - Relative Luminous Intensity 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 17018 10 30 mA 50 mA yellow yellow 1 10 mA 0.1 0.01 1 10 IF - Forward Current (mA) 100 17015 Figure 23. Change of Forward Voltage vs. Ambient Temperature Figure 26. Relative Luminous Intensity vs. Forward Current 2.5 IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 0.0 - 50 17016 - Change of Dom. Wavelength (nm) 1.5 yellow 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 17019 d 10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA) Figure 24. Relative Luminous Intensity vs. Ambient Temperature Figure 27. Change of Dominant Wavelength vs. Forward Current Δλd - Change of Dom. Wavelength (nm) 6 yellow 4 2 0 -2 -4 -6 - 50 IF - Forward Current (A) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 10 -5 17044 tP/T = 0.005 0.05 0.5 17017 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 10 -4 10 -3 10 -2 10 -1 10 0 101 10 2 tP - Pulse Length (s) Figure 25. Change of Dominant Wavelength vs. Ambient Temperature Figure 28. Forward Current vs. Pulse Length www.vishay.com 8 Document Number 81284 Rev. 1.0, 22-Feb-08 TLM.32. Vishay Semiconductors TAPING DIMENSIONS in millimeters Anode Cathode 3.5 3.1 2.2 2.0 5.75 5.25 3.6 3.4 8.3 7.7 4.0 3.6 Cathode 1.85 1.65 1.6 1.4 4.1 3.9 2.05 1.95 18596 4.1 3.9 0.25 REEL DIMENSIONS in millimeters 10.4 8.4 120° 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 Identification Label: Vishay Type Group Tape Code Production Code Quantity 321 329 14.4 max. 18857 Document Number 81284 Rev. 1.0, 22-Feb-08 www.vishay.com 9 TLM.32. Vishay Semiconductors RECOMMENDED PAD DESIGN Dimensions in millimeters (Wave-Soldering), RthJA = 270 K/W 16260 RECOMMENDED PAD DESIGN Dimensions in millimeters (Reflow-Soldering), RthJA = 270 K/W 16261 www.vishay.com 10 Document Number 81284 Rev. 1.0, 22-Feb-08 TLM.32. Vishay Semiconductors OPTIONAL PAD DESIGN Dimensions in millimeters (Wave-Soldering), RthJA = 290 K/W 16262 OPTIONAL PAD DESIGN Dimensions in millimeters (Reflow-Soldering), RthJA = 290 K/W 16263 Document Number 81284 Rev. 1.0, 22-Feb-08 www.vishay.com 11 TLM.32. Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Drawing-No. : 6.541-5054.01-4 Issue: 2; 02.12.05 16276_2 SOLDERING PROFILE IR Reflow Soldering Profile for Lead (Pb)-free Soldering Preconditioning acc. to JEDEC Level 2a TTW Soldering 300 5s 235 °C to 260 °C first wave ca. 200 K/s 100 °C to 130 °C 100 50 0 (acc. to CECC00802) 948626-1 300 250 Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 19885 Temperature (°C) 255 °C 240 °C 217 °C max. 260 °C 245 °C lead temperature second wave ca. 2 K/s full line: typical dotted line: process limits 250 200 150 max. 100 s 2 K/s forced cooling ca. 5 K/s max. ramp up 3 °C/s max. ramp down 6 °C/s 50 100 150 Time (s) 200 250 300 0 50 100 Time (s) 150 200 250 max. 2 cycles allowed Figure 29. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B) Figure 30. Double Wave Soldering of Opto Devices (all Packages) www.vishay.com 12 Document Number 81284 Rev. 1.0, 22-Feb-08 TLM.32. Vishay Semiconductors LABEL OF FAN FOLD BOX EXAMPLE: RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is included on all dry bags. LEVEL This bag contains MOISTURE –SENSITIVE DEVICES 106 E F 37 TLMK3200-GS18 8000 U2 B A C G D 21063 A) Type of component B) PTC = manufacturing plant C) SEL - selection code (bin): e.g.: U2 = code for luminous intensity group D) Batch/date code E) Total quantity F) Company code G) Code for lead (Pb)-free classification (e3) DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. CAUTION 2a 1. Shelf life in sealed bag 12 months at