TP0101T/TS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
ID (A) VDS (V)
–20
rDS(on) (W)
0.65 @ VGS = –4.5 V 0.85 @ VGS = –2.5 V
TP0101T
–0.6 –0.5
TP0101TS
–1.0 –0.9
FEATURES
D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching–Cell Phones, Pagers
TO-236 (SOT-23)
Top View G 1 3 S 2 D Marking Code: TP0101T: POwll TP0101TS: PSwll w = Week Code l = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg
TP0101T
–20 "8 –0.6 –0.48 –3 –0.6 0.35 0.22 –55 to 150
TP0101TSc
–20 "8 –1.0 –0.8 –3 –1.0 1.0 0.65 –55 to 150
Unit
V
A
Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range
W _C
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70229 S-04279—Rev. D, 16-Jul-01 www.vishay.com
Symbol
RthJA
TP0101T
357
TP0101TSc
125
Unit
_C/W
11-1
TP0101T/TS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –50 mA VDS = 0 V, VGS = "8 V VDS = –9.6 V, VGS = 0 V TJ = 55_C VDS v –5 V, VGS = –4.5 V ID(on) VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –0.6 A rDS(on) gfs VSD VGS = –2.5 V, ID = –0.5 A VDS = –5 V, ID = –0.6 A IS = –0.6 A, VGS = 0 V –2.5 –0.5 0.45 0.69 1300 –0.9 –1.2 0.65 0.85 W mS V A –20 –0.5 –26 –0.9 –1.5 "100 –1 –10 mA V nA
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State Drain Currenta
Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = –6 V, VGS = 0, f = 1 MHz VDS = –6 V, VGS =–4.5 V ID ^ –0.6 A 2020 180 720 110 80 30 pF 3000 pC
Switching
td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. VDD = –6 V, RL = 12 W ID ^ –0.6 A, VGEN = –4.5 V RG = 6 W 7 25 19 9 12 35 ns 30 15 VPLJ01
Turn-Off Time
www.vishay.com
11-2
Document Number: 70229 S-04279—Rev. D, 16-Jul-01
TP0101T/TS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–6
Output Characteristics
–2.0
Transfer Characteristics
TA = –55_C
–5 ID – Drain Current (A)
VGS = –5 V
–4.5 V ID – Drain Current (A) –4 V –1.5 25_C 125_C –1.0
–4
–3.5 V –3 V
–3
–2
–2.5 V –2 V –1.5 V –0.5, 1 V
–0.5
–1
0 0 –1 –2 –3 –4
0.0 0.0
– 0.5
–1.0
–1.5
– 2.0
– 2.5
– 3.0
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
–4 rDS(on) – Drain-Source On-Resistance ( Ω ) 350 300 –3 C – Capacitance (pF) 250 200 150
Capacitance
VGS = 0 f = 1 MHz
–2 VGS = –2.5 V –1
Ciss 100 Coss 50 Crss
VGS = –4.5 V
0 0 –1 –2 –3 –4 –5
0 0 –3 –6 –9 – 12
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
–7 –6 VGS – Gate-to-Source Voltage (V) –5 –4 –3 –2 –1 0 0 600 VDS = –6 V ID = –0.5 A
Gate Charge
1.7
On-Resistance vs. Junction Temperature
1.5 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS = –4.5 V ID = –0.5 A 1.3
1.1
0.9
1200
1800
2400
3000
0.7 –50
0
50
100
150
Qg – Total Gate Charge (pC)
TJ – Junction Temperature (_C)
Document Number: 70229 S-04279—Rev. D, 16-Jul-01
www.vishay.com
11-3
TP0101T/TS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
–10 3.0
On-Resistance vs. Gate-to-Source Voltage
2.5 IS – Source Current (A) TJ = 50_C –1 rDS(on) – On-Resistance ( Ω )
2.0
1.5
– 0.1
TJ = 25_C
1.0 ID = –0.5 A 0.5
–0.01 0.0 – 0.5 –1.0 – 1.5 – 2.0 – 2.5
0.0 0 –1 –2 –3 –4 –5
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.34 10
Single Pulse Power
0.24 VGS(th) – Variance (V) ID = –50 mA 0.14
8
6
0.04
4 TA = 25_C Single Pulse
–0.06
2
–0.16 –50
0 0 50 100 150 0.001 0.01 0.1 Time (sec) 1 10 100
TJ – Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 30
www.vishay.com
11-4
Document Number: 70229 S-04279—Rev. D, 16-Jul-01
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