TSAL7300

TSAL7300 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package Description TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. 94 8389 Features D D D D D D D D Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 22° Peak wavelength lp = 940 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Document Number 81013 Rev. 1, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSAL7300 Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions tp/T = 0.5, tp = 100 ms tp = 100 ms Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1,5 210 100 –55...+100 –55...+100 260 350 Unit V mA mA A mW °C °C °C °C K/W t x 5sec, 2 mm from case Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Virtual Source Diameter Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA VR = 5 V VR = 0, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1 A IF = 100 mA IF = 1 A method: 63% encircled energy Symbol VF VF TKVF IR Cj Ie Ie TKfe ϕ Min Typ 1.35 2.6 –1.875 25 45 350 35 –0.6 ±22 940 50 0.2 800 500 800 500 2.1 Max 1.6 3 10 30 260 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm fe TKlp tr tr tf tf ø lp Dl www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81013 Rev. 1, 20-May-99 TSAL7300 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 104 103 150 RthJA 100 102 tp = 100 ms tp / T = 0.001 101 50 0 0 20 40 60 80 100 100 0 13600 1 2 3 4 94 7957 e Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 250 200 V Frel – Relative Forward Voltage IF – Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage 1.2 1.1 IF = 10 mA 1.0 0.9 150 100 RthJA 50 0 0 20 40 60 80 100 0.8 0.7 0 20 40 60 80 100 96 11986 Tamb – Ambient Temperature ( °C ) 94 7990 e Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 1000 I e – Radiant Intensity ( mW/sr ) 101 I F – Forward Current ( A ) IFSM = 1 A ( Single Pulse ) tp / T = 0.01 100 0.1 0.5 0.05 100 10 1 1.0 10–1 –2 10 96 11987 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 14327 100 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81013 Rev. 1, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSAL7300 Vishay Telefunken 1000 1.25 Fe rel – Relative Radiant Power Fe – Radiant Power ( mW ) 100 1.0 0.75 0.5 10 1 0.25 IF = 100 mA 0 890 0.1 100 13602 101 102 103 IF – Forward Current ( mA ) 104 14291 l – Wavelength ( nm ) 0° 940 990 Figure 7. Radiant Power vs. Forward Current Figure 9. Relative Radiant Power vs. Wavelength 10 ° 20 ° 1.6 I e rel – Relative Radiant Intensity 30° 1.2 I e rel ; Fe rel IF = 20 mA 0.8 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.4 0 –10 0 10 94 7993 e 50 100 140 94 8883 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81013 Rev. 1, 20-May-99 TSAL7300 Vishay Telefunken Dimensions in mm 96 12126 Document Number 81013 Rev. 1, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TSAL7300 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81013 Rev. 1, 20-May-99